Population inversion study of GaAs/AlGaAs three-quantum-well quantum cascade structures

A population inversion study of GaAs/AlxGa1-x As three-quantum-well quantum cascade structures is presented. We derive the population inversion condition (PIC) of the active region (AR) and discuss the PICs on different structures by changing structural parameters such as the widths of quantum wells or barriers in the AR. For some instances, the PIC can be simplified and is proportional to the spontaneous emission lifetime between the second and the first excited states, whereas some other instances imply that the PIC is proportional to the state lifetime of the second excited state.     

Fabrication of c-Si：H（p）/c-Si（n） Heterojunction Solar Cells with Microcrystalline Emitters

The p-type microcrystalline silicon （μc-Si：H） on n-type crystalline silicon （c-Si） heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition （rf-PECVD）. The effect of the μc- Si：Hp-layers on the performance of the heterojunction solar cells is investigated. Optimum μc-Si：H p-layer is obtained with hydrogen dil u tion ratio of 99.65 %, rf-power of 0. 08 W/cm^2 , gas phase doping ratio of 0. 125 %, and the p-layer thickness of 15nm. We fabricate μc-Si：H（p）/c-Si（n） heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.     

亚强非局域介质中的超高斯空间光孤子族研究

研究了亚强非局域介质中超高斯光束的传播特性.运用变分法,对任意实对称响应函数泰勒级数展开取至四阶,得到了1+1维亚强非局域非线性介质中光束传输的超高斯光束的近似分析解.分析结果表明：束宽解是椭圆雅可比双周期函数,相移、空间啁啾以及临界输入功率都正比于超高斯光束的阶数.提出了超高斯空间光孤子族模型和准方波形空间光孤子的实现可能性.     

低温制备微晶硅薄膜生长机制的研究

采用热丝化学气相沉积技术制备了一系列处于不同生长阶段的薄膜样品，用原子力显微镜系 统地研究生长在单晶硅衬底和玻璃衬底上薄膜表面形貌的演化.按照分形理论分析得到：在 玻璃衬底上的硅薄膜以零扩散随机生长模式生长；而在单晶硅衬底上，薄膜早期以有限扩散 生长模式生长，当膜厚超过某一临界厚度时转变为零扩散随机生长模式.岛面密度与膜厚的 依赖关系表明，在临界厚度时硅衬底和玻璃衬底上的岛面密度均出现了极大值.Raman谱的测 量证实，玻璃衬底上薄膜临界厚度与非晶/微晶相变之间存在密切的关系.不同的衬底材料直 接影响反应 关键词： 生长机制 微晶硅薄膜 表面形貌 热丝化学气相沉积     

Surface Carbonization of GaN and the Related Structure Evolution during the Annealing Process

To explain the stabilization mechanism of the carbon-ion-implanted GaN under the diamond growth environment,the luminescence characteristics and structure evolution correlative with sites' carbon atoms located for highfluence carbon-ion-implanted Ga N are discussed. GaN is implanted with carbon ion using fluence of 2×10~(17) cm~(-2) and energy of 45 keV. Then the implanted samples are annealed at 800℃ for 20 min and 1 h under the N_2 atmosphere. The luminescence characteristics of carbon-ion-implanted GaN are evaluated by photoluminescence spectrum at wavelength 325 nm. The lattice damage of Ga N is characterized by Raman spectrum and the corresponding vacancy-defect evolution before and after annealing is measured by slow positron annihilation. The results show that most of the carbon atoms will be located at the interstitial sites after carbon ion implantation due to the weak mobility. As the implanted samples are annealed, strong yellow luminescence is emitted and the vacancies for Ga(V_(Ga)) are reduced resulting from the migration of interstitial carbon(C_i) and formation of complexes(CGaand/or C_(Ga)-C_i) between them. As the annealing time is prolonged, the carbon ions accommodated by the vacancies are saturated, vacancy clusters with carbon atoms appear and the concentration of C_(Ga) diminishes, which will have an adverse effect on the diamond film nucleation and growth.     

高氢稀释制备微晶硅薄膜微结构的研究

采用高氢稀硅烷热丝化学气相沉积方法制备氢化微晶硅薄膜.其结构特征用Raman谱，红外透射谱，小角X射线散射等来表征.结果表明微晶硅的大小及在薄膜中的晶态比χ_c随氢稀释度的提高而增加.而从红外谱计算得到氢含量则随氢稀释度的增加而减少.小角X射线散射结果表明薄膜致密度随氢稀释度的增加而增加.结合红外谱和小角X射线散射的结果讨论与比较了不同相结构下硅网络中H的键合状态.认为随着晶化的发生和晶化程度的提高H逐渐移向晶粒表面，在硅薄膜中H的存在形式从以SiH为主向SiH₂ 关键词：     

斯拉夫哈萨克文与现行哈萨克文编码字符转换规则的探究

哈萨克语在发展变化的过程中,在世界范围内形成了基于同一语言的两种文字形式的特殊情况,分别是国外的以斯拉夫文字母为基础的哈萨克斯拉夫文字,称之为斯拉夫哈萨克文,以及我国的以阿拉伯文字母为基础的哈萨克阿拉伯文字,称之为现行哈萨克文。由于两种哈萨克文发音相同,而且均是一音一字的文字形式,所以斯拉夫哈萨克文与现行哈萨克文是可以通过规则互相转换的,但至今并没有相关的国家或地方标准对转换规则进行明确描述。因此,本文通过对斯拉夫哈萨克文和现行哈萨克文的研究,提出两种文字的字符编码转换规则。     

一种新的互注入锁定产生单/双波长光脉冲的方案

本文提出了使用两个F-P半导体激光器互注入锁定来产生单/双波长光脉冲的方法.其中一个FP做增益开关调制,另一个给定直流偏置.通过简单调节一个可调光滤波器,可以输出所需波长,且重复频率保持不变.对于单波长输出,在19nm范围内其边模抑制比超过30dB;对于双波长输出,在12.1nm范围内其边模抑制比超过25dB.该系统具有简单,成本低的优点.     

泵腔结构参数对压电气泵性能影响

为了探究泵腔结构参数对压电气体隔膜泵性能的影响,该文设计了一种压电气体隔膜泵的泵腔结构。首先简述了泵腔的结构设计与工作原理,推导出泵腔出口气流速度的表达式,通过仿真得出泵腔高度、气孔直径对腔体内的瞬时气压、气流速度及气体流量的影响。最后制作了泵腔样机并应用在压电气体隔膜泵中,进行了实验测试及理论分析对比。结果表明,实验结果与理论分析相吻合,输出流量随着腔高的增大而减小,随着气孔直径的增大而增大,这为压电气体微泵的腔体设计提供了理论参考。