The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.     

含季戊四醇磷酸酯阻燃剂的合成与表征

采用1-氧代-4-羟甲基-2,6,7-三氧杂-1-磷杂双环[2.2.2]辛烷(PEPA)、三氯氧磷、双酚A和双酚S为反应物,合成了两个新型添加型阻燃剂:双酚A双[二(1-氧代-1-磷杂-2,6,7-三氧杂双环辛烷-4-亚甲基)]磷酸酯(BAPP)和双酚S双[二(1-氧代-1-磷杂-2,6,7-三氧杂双环辛烷-4-亚甲基)]磷酸酯(BSPP),通过元素分析、FT-IR和1H NMR等表征了标题化合物的结构,结果表明,所合成的标题化合物的结构与预期一致。热失重分析结果证明,BAPP和BSPP质量损失5%(wt)时的温度分别为343.6℃和352.3℃,600℃残余量分别达46.6%和55.5%,具有较高的热稳定性和结炭性能。阻燃性能实验证明,E-51环氧树脂中分别添加质量分数为18.2%(wt)的BAPP和BSPP时,极限氧指数分别为32.2%和31.8%,均能达到UL 94 V-0级。