In situ growth of different numbers of gold nanoparticles on MoS_2 with enhanced electrocatalytic activity for hydrogen evolution reaction

Producing hydrogen through a hydrogen evolution reaction(HER) by splitting water at the suitable overpotential is a great alternative to solving the problems of environmental pollution and the energy crisis. Molybdenum sulfide(MoS_2)has attracted extensive attention as one of the most promising catalytic materials for HER. In this work, we design a facile method to in situ grow gold nanoparticles(Au NPs) on MoS_2. Different numbers of Au NPs with MoS_2 are used to find the best catalytic activity. Due to the larger active surface area and higher conductivity of the Au–MoS_2 composites, all the Au–MoS_2 composites exhibit more enhanced HER electroactivity than pure MoS_2. In brief, the new material architecture exhibits optimized HER activity with a low onset overpotential of 0.12 V, low Tafel slope of 0.163 V·dec~(-1), and an excellent stability in acidic solution.     

云平台数据存储技术研究概述

云计算是现阶段互联网的重要技术发展方向。云存储目前在国内具有十分广阔的应用价值,云盘的使用程度已经非常普及。云存储的发展时间并不长,但却以极快的速度和应用规模被人们所熟知,云存储对于互联网的贡献往往不只是方便生活这么简单,在大大小小的互联网商业服务企业中,人们已经把云存储作为重要的研究项目,云储存在大大改善硬件存储不便的同时,为升级海量信息的管理提供了有效的渠道。本文通过概述云平台数据存储技术的研究现状,与此同时,对现阶段解决该问题的主要方法进行分析。     

Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors

AlGaN/GaN heterostructure field-effect transistors(HFETs) with different floating gate lengths and floating gates annealed at different temperatures, are fabricated. Using the measured capacitance–voltage curves of the gate Shottky contacts for the AlGaN/GaN HFETs, we find that after floating gate experiences 600?C rapid thermal annealing, the larger the floating gate length, the larger the two-dimensional electron gas electron density under the gate region is. Based on the measured capacitance–voltage and current–voltage curves, the strain of the AlGaN barrier layer in the gate region is calculated, which proves that the increased electron density originates from the increased strain of the AlGaN barrier layer.     

超宽带平坦多载波光源结构设计

为了解决波分复用系统中传统光源稳定性差、成本高、带宽小等问题,本文提出了一种超宽带平坦光源发生器结构,该结构基于级联的电吸收调制器和两个频率调制器,得到了频率间隔相同且可调的高带宽、平坦度小的多载波光源。在单波长光信号输入下,产生了大范围频率间隔可调平坦度小于0.2 dB的21个子载波的多载波光源,当驱动信号频率为8 GHz和9 GHz时,平坦度可达到0.07 dB;在多波长光信号输入下,得到了频率间隔为15 GHz,平坦度小于0.9 dB子载波数为275的超宽带平坦光源,频谱宽度可以达到THz以上。最后研究了10 GHz驱动信号下,电吸收调制器与频率调制器驱动信号的相位差、频率调制器的频率偏移以及电吸收调制器的啁啾因子对多载波光源的影响,结果表明,驱动信号的相位差在±10°上下波动时,平坦度最大改变了1.05 dB,频率调制器的频率偏移在±10 GHz范围内变化时,平坦度波动幅度仅为0.1 dB,表明该结构具有良好的稳定性和可控性。     

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

The parasitic source resistance(RS) of Al Ga N/Al N/Ga N heterostructure field-effect transistors(HFETs) is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage(C–V) and current–voltage(I–V) characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field(PCF) scattering exhibits a significant impact on RSat the above-mentioned different temperatures. Furthermore, in the Al Ga N/Al N/Ga N HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of RS.     

频率间隔可调的平坦多载波光源结构设计

为了克服密集波分复用系统中多个光源难以同步且成本高等缺点,提出了一种平坦度好、子载波数多、频谱宽度大且频率间隔可调的多载波光源生成结构.系统结构由马赫增德尔调制器、电吸收调制器和相位调制器级联组成,在单一正弦信号驱动下,输出多个低平坦度、频率间隔可调的子载波.在驱动信号频率为9和12.5GHz,系统生成的子载波数量为31个的条件下,平坦度可达到0.09dB.当驱动信号频率在3GHz~16GHz范围变化时,输出的子载波数量基本不变,且在子载波数量为31个的条件下,平坦度均小于0.15dB.当驱动信号频率为16GHz,平坦度小于0.15dB时,系统输出的多载波光源频谱宽度可达480GHz.此外,分析了MZM的上、下臂偏置电压差、EAM的啁啾因子、调制指数对生成多载波光源的平坦度、子载波数以及频谱宽度的影响.