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191.
用二维光学多道分析仪研究了低气压表面波型微波感耦氬等离子体的光谱辐射特性?鼳bel反演后,得到了在各种气压和微波功率下等离子体辐射光强和激发温度的空间分布及其变化规律。讨论了此等离子体的激发机理。 相似文献
192.
针对非晶硅锗电池本征层高锗含量时界面带隙失配以及高界面缺陷密度造成电池开路电压和填充因子下降的问题,通过在PI界面插入具有合适带隙的非晶硅缓冲层,不仅有效缓和了带隙失配,降低界面复合,同时也通过降低界面缺陷密度改善内建电场分布,从而提高了电池的收集效率. 进一步引入IN界面缓冲层以及对非晶硅锗本征层进行能带梯度设计,在仅采用Al背电极时,单结非晶硅锗电池转换效率达8.72%.
关键词:
非晶硅缓冲层
非晶硅锗薄膜太阳电池
带隙
界面 相似文献
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194.
A new ellipse fitting method of the minimum differential-mode noise in the atom interference gravimeter 下载免费PDF全文
Ellipse fitting is a useful tool to obtain the differential signal of two atom interference gravimeters. The quality standard of ellipse fitting should be the deviation between the true phase and the fitting phase of the interference fringe. In this paper, we present a new algorithm to fit the ellipse. The algorithm is to minimize the differential noise of two interference gravimeters and obtain a more accurate value of the gravity gradient. We have theoretically derived the expression of the differential-mode noise and implemented the ellipse fitting in the program. This new algorithm is also compared with the classical methods. 相似文献
195.
Nanoforest-like CdS/TiO_2 heterostructure composites:Synthesis and photoelectrochemical application 下载免费PDF全文
In this study, TiO_2 nanoforest films consisting of nanotubes have been synthesized by a simple hydrothermal method and a subsequent sintering technique. The hydrothermal reaction time is important for the controlling of the nanotube diameter and the specific surface area of holistic TiO_2 films. When the hydrothermal process reaction time is up to 8 hours,the diameter of the nanotube is about 10 nm, and the specific surface area of TiO_2 nanoforest films reaches the maximum.CdS nanoparticles are synthesized on TiO_2 nanoforest films by the successive ionic layer adsorption and reaction(SILAR)technique. The transmission electron microscope(TEM) and energy dispersive x-ray spectroscopy(EDX) mapping results verify that TiO_2/CdS heterostructures are realized. A significant red-shift of the absorption edge from 380 nm to 540 nm can be observed after the pure TiO_2 film is sensitized by CdS nanoparticles. Under irradiation of light, the current density of the optimal TiO_2/CdS photoanode is 2.30 mA·cm-2 at 0 V relative to the saturated calomel electrode(SCE), which is 6 times stronger than that of the pure TiO_2 photoanode. This study suggests that the TiO_2 nanoforest consisting of interlinked pony-size nanotubes is a promising nanostructure for photoelectrochemical. 相似文献
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198.
研究了多壁碳纳米管(MWNTs)薄膜的湿敏特性,实验所用的多壁碳纳米管是用热灯丝化学气相沉积法(CVD)合成的.分别对未修饰和修饰的多壁碳纳米管膜温度和湿度特性进行研究后发现,修饰的多壁碳纳米管对温度和湿度非常敏感,且对湿度的响应时间和恢复时间短,重复性好.而未修饰的多壁碳纳米管对温度和湿度不太敏感.对修饰多壁碳纳米管的湿敏特性进行了理论分析,给出了其理论表示式.
关键词:
多壁碳纳米管
化学修饰
湿敏特性
物理吸附 相似文献
199.
A Comparison of Different Measures for Dynamical Event Mean Transverse Momentum Fluctuation 下载免费PDF全文
Various measures for the dynamical event mean transverse momentum fluctuation are compared with the real dynamical fluctuation using a Monte Carlo model. The variance calculated from the G-moments can reproduce the dynamical variance well, while those obtained by subtraction procedures are approximate measures for not very low multiplicity. Фpt, proposed by Gadzicki M and Mrowczynski S [Z. Phys. C 54 (1992)127], can also serve as an approximate measure after being divided by the square root of mean multiplicity. 相似文献
200.
Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD 总被引:4,自引:0,他引:4 下载免费PDF全文
Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (T_s) and silane concentration (SC=[SiH_4]/[SiH_4+H_2]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of T_s and SC. The results of x-ray diffraction (XRD) measurements indicated that T_s also influences the crystal orientation of the Si:H films. The modulation effect of T_s on crystalline volume fraction (X_c) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and T_s. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing T_s and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD. 相似文献