排序方式： 共有33条查询结果，搜索用时 15 毫秒
21.
An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 1011 cm-2,1× 1012 cm-2, and 5× 1012 cm-2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 1012 cm-2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects. 相似文献
22.
本文介绍了一种简单高效的制备硅纳米孔阵结构的方法. 利用激光干涉光刻技术, 结合干法和湿法刻蚀工艺, 直接将光刻胶点阵刻蚀为硅纳米孔阵结构, 省去了图形反转工艺中的金属蒸镀和光刻胶剥离等必要步骤, 在2英寸的硅 (001) 衬底上制备了高度有序的二维纳米孔阵结构. 利用干法刻蚀产生的氟碳有机聚合物作为湿法刻蚀的掩膜, 以及在干法刻蚀时对样品进行轻微的过刻蚀, 使SiO2点阵图形下形成一层很薄的硅台面, 是本方法的两个关键工艺步骤. 扫描电子显微镜图片结果表明制备的孔阵图形大小均匀, 尺寸可控, 孔阵周期为450 nm, 方孔大小为200–280 nm.关键词：激光干涉光刻纳米阵列刻蚀氟碳有机聚合物 相似文献
23.
The 100-nm T-gate InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) with the width of 2×50 μm and source-drain space of 2.4 μm are systematically investigated. High indium (In) composition of InGaAs layer was adopted to acquire the higher mobility of the channel layer. A sandwich structure was adopted to optimize the cap layers and produce a very low contact resistance. The fabricated devices exhibit extrinsic maximum transconductance Gm.max=1441 mS/mm, cutoff frequency fT=260 GHz, and maximum oscillation frequency fmax=607 GHz. A semi-empirical model has been developed to precisely fit the low-frequency region of scattering parameters (S parameters) for InP-based HEMTs. Excellent agreement between measured and simulated S parameters demonstrates the validity of this approach. 相似文献
24.
The TiO2-Mn-TiO2 multilayers are successfully grown on glass and silicon substrates by alternately using radio frequency reactive magnetron sputtering and direct current magnetron sputtering. The structures and the magnetic behaviours of these films are characterised with x-ray diffraction, transmission electron microscope (TEM), vibrating sample magnetometer, and superconducting quantum interference device (SQUID). It is shown that the multi-film consists of a mixture of anatase and rutile TiO2 with an embedded Mn nano-film. It is found that there are two turning points from ferromagnetic phase to antiferromagnetic phase. One is at 42 K attributed to interface coupling between ferromagnetic Mn3O4 and antiferromagnetic Mn2O3, and the other is at 97 K owing to the interface coupling between ferromagnetic Mn and antiferromagnetic MnO. The samples are shown to have ferromagnetic behaviours at room temperature from hysteresis in the M-H loops, and their ferromagnetism is found to vary with the thickness of Mn nano-film. Moreover, the Mn nano-film has a critical thickness of about 18.5 nm, which makes the coercivity of the multi-film reach a maximum of about 3.965×10 2 T. 相似文献
25.
Brannerite MnV 2 O 6 with plate-like shape is successfully synthesized by hydrothermal method.Its crystal structure and morphology are investigated by x-ray diffraction (XRD),scanning electron microscopy (SEM),transmission electron microscope (TEM),high resolution transmission electron microscopy (HRTEM) and select area electronic diffraction (SAED).The results show that the brannerite MnV 2 O 6 with monoclinic structure has a uniform plate-like shape with a diameter of about 5-8 μm and a thickness of about 500 nm.SAED patterns further confirm the structure of the brannerite MnV 2 O 6 and the single crystalline character of the plate crystal.Magnetic properties are measured by superconducting quantum interference device (SQUID) in a temperature range of 2-300 K under a magnetic field of 1 T.The magnetic measurement results indicate that the material undergoes an antiferromagnetic transition with a N’eel temperature of 17 K.Above 50 K,the inverse susceptibility is fitted well to the Curie-Weiss law with a calculated moment of 5.98 μ B.Finally,the origin of antiferromagnetic behaviour in the brannerite MnV 2 O 6 is explained by means of Anderson model. 相似文献
26.
InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length and gate width of 2 × 50 μm shows excellent DC characteristics, including full channel current of 724 mA/mm, extrinsic maximum transconductance gm.max of 1051 mS/mm, and drain-gate breakdown voltage BVDG of 5.92 V. In addition, this device exhibits fT = 249 GHz and fmax = 415 GHz. These results were obtained by fabricating an asymmetrically recessed gate and minimizing the parasitic resistances. The specific Ohmic contact resistance was reduced to 0.031 0.mm. Moreover, the fT obtained in this work is the highest ever reported in 100-nm gate length InA1As/InGaAs InP-based HEMTs. The outstanding gm.max, fT, fmax, and good BVDG make the device suitable for applications in low noise amplifiers, power amplifiers, and high speed circuits. 相似文献
27.
BiFeO3纳米粉的制备、结构表征及铁磁特性 总被引：1，自引：0，他引：1
采用溶胶-凝胶法成功地制备出BiFeO3纳米粉,利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）和透射电子显微镜（TEM）测量分析了其结构与形貌,结果发现：胶体经700℃烧结2—25 h后,形成了30 nm左右的较纯相BiFeO3粉末,该样品为六角晶系,R3-m［166］空间群,晶胞参数为a=b=05580 nm,c=06939 nm,其（101）面晶面间距为0396 nm左右,（关键词：溶胶-凝胶法3纳米粉')\" href=\"#\">BiFeO3纳米粉结构表征铁磁特性 相似文献
28.
采用水热合成法在预先生长的ZnO种子层的玻璃衬底上制备出Al和Sb共掺ZnO纳米棒有序阵列薄膜. 通过X射线衍射、扫描电镜、透射电镜和选区电子衍射分析表明:所制备的薄膜由垂直于ZnO种子层的纳米棒组成, 呈单晶六角纤锌矿ZnO结构, 且沿[001]方向择优生长, 纳米棒的平均直径和长度分别为27.8 nm和1.02 μm. Al和Sb共掺ZnO纳米棒有序阵列薄膜的拉曼散射分析表明:相对于未掺杂ZnO薄膜的拉曼振动峰(580 cm-1), Al和Sb共掺ZnO阵列薄膜的E1(LO)振动模式存在拉曼位移. 当Al和Sb的掺杂量为3.0at%,4.0at%,5.0at%,6.0at%时, Al和Sb共掺ZnO阵列薄膜的拉曼振动峰的位移量分别为3,10,14,12 cm-1. E1 (LO) 振动模式位移是由Al和Sb掺杂ZnO产生的缺陷引起的. 室温光致发光结果表明:掺杂Al和Sb后, ZnO薄膜在545 nm处的发光强度减小,在414 nm处的发光强度增加. 这是由于掺杂Al和Sb后, ZnO薄膜中Zni缺陷增加, Oi缺陷减少引起的.关键词：Al和Sb共掺ZnO薄膜纳米棒有序阵列结构表征拉曼散射 相似文献
29.
30.
丁芃 《电视字幕·特技与动画》2016,(5):53-59
After effects是动态的Photoshop,各种滤镜效果在AE中能够发挥更大的作用,综合熟练使用滤镜就能轻松制作出逼真的雷雨交加效果. 相似文献