A simple method for determining static parameters of large signal semiconductor diode and transistor models

A simple on-line interactive computing methodology for determining static parameters of large-signal semiconductor models is described. The procedure makes use of: (1) an automatic data collection scheme, (2) a single search, three-parameter optimization method for computing diode parameters, and (3) a partitioning scheme to separate the defining transistor equations into two single search, three-parameter problems which are solved by the diode optimization method described in (2).

The method is described by means of the CIRCUS diode and transistor models, and is compared experimentally with Sokal's method [1,2]. The new approach is shown to be superior.     

MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices

Epitaxial growth on GaN bulk single crystal substrates sets new standards in GaN material quality. The outstanding properties provide insights into fundamental material parameters (e.g. lattice constants, exciton binding energies, etc.) with a precision not obtainable from heteroepitaxial growth on sapphire or SiC. With metalorganic vapor phase epitaxy (MOVPE) we realized unstrained GaN layers with dislocation densities about six orders of magnitude lower than in heteroepitaxy. By the use of dry etching techniques for surface preparation, an important improvement of crystal quality is achieved. Those layers reveal an exceptional optical quality as determined by a reduction of the low-temperature photoluminescence (PL) linewidth from 5 meV to 0.1 meV and a reduced X-ray diffraction (XRD) rocking curve width from 400 to 20 arcsec. As a consequence of the narrow PL linewidths, new features as, e. g. a fivefold fine structure of the donor-bound exciton line at 3.471 eV was detected. Additionally, all three free excitons as well as their excited states are visible in PL at 2 K.

Dry etching techniques for surface preparation allow morphologies of the layers suitable for device applications. We report on InGaN/GaN multi-quantum-well (MQW)_ structures as well as GaN pn- and InGaN/GaN double heterostructure light emitting diodes (LEDs) on GaN bulk single crystal substrates. Those LEDs are twice as bright as their counterparts grown on sapphire. In addition they reveal an improved high power characteristics, which is attributed to an enhanced crystal quality and an increased p-doping.     

Monitoring changes in the band structure of graphite following chemical reaction: An X-ray-induced photo-electron study of intercalation

Dramatic changes in the valence band of graphite, resulting from the insertion of bromine between the layers, are directly measurable using the ESCA technique.     

难熔金属硅化物的喇曼散射

用电子束蒸发方法在10~(-7)托真空中使单晶硅上蒸上一层Ti膜后,于N_2中进行从500-1000℃10秒钟的快速热退火,由激光喇曼光谱结合薄层电阻测量和转靶X射线衍射研究分析了TiSi_2的形成.退火温度高于680℃时,观察到207和244cm~(-1)波数处的两个TiSi_2的特征喇曼峰,当退火温度为580℃时,只有270,297和3ncm~(-1)的三个喇曼峰,这些可能是钛的氧化物和不包括TiSi的钛硅化物.     

太空生长掺Te—GaAs单晶的结构缺陷观测

本文用X射线、电子显微镜和电子束阴极荧光方法,对在太空中生长的掺Te-GaAs单晶材料的结构完整性进行了实验研究.在地面生长的掺Te-GaAs有明显的杂质条纹,而在太空生长的晶体杂质条纹消失;在太空和地面生长的交界处于空间材料一侧的中心部位,存在一个大约5μm宽的高完整区.远离中心部位,空间材料的完整性降低,出现了大量位错并伴有微缺陷.实验结果表明:在微重力条件下生长化合物半导体GaAs对在其中的杂质均匀分布有利.在太生长时出现的大量位错和微缺陷,并不是在生长时由于失重所致,而是在太空生长时温度失控所引起的.     

离子束混合诱导稀土金属Ce与Si的界面反应及硅化物的形成

本文详细讨论了离子束混合下,Ce/Si〈100〉双层膜体系界面反应的动力学过程以及硅化物的形成规律.样品经150KeV Ar离子注入,辐照温度从LNT到300℃,剂量从5×X10~(14)到8.1×10~(16)Ar/cm~2.界面反应形成的硅化物为CeSi_2,其结构为体心正交结构.硅化物是分层生长的,厚度与注入剂量的平方根成线性关系,这说明界面反应是扩散控制的.与近贵金属/硅体系和难熔金属/硅体系相比较可以看出,稀土金属Ce/Si体系的相变过程与难熔金属/硅体系的相似;而混合的动力学行为与近贵金属/硅体系的相似.本文还讨论了化学驱动力和辐射增强扩散对混合的贡献.     

Effects of crystallographic ordering on the magnetic behaviour of (AgIn)1-zMn2zTe2 and (CuIn)1-zMn2zTe2 alloys

Measurements of magnetic susceptibility in the temperature range 4.2–300 K were made on polycrystalline samples of the (AgIn)_{1 - z}Mn_2zTe₂ and (CuIn)_{1 - z}Mn_2zTe₂ alloys, and the data used to give values of spin-glass transition te mperature T_g and Curie-Weiss paramagnetic temperature θ. For any sample for which the X-ray powder photograph indicated an apparently single phase condition, either zinc-blende or chalcopyrite, the susceptibility data could show up to three separate T_g values. These different magnetic conditions are attributed to crystallographic ordering of the Mn ions on the chalcopyrite and zinc-blende lattices, the three observed T_g values corresponding to disordered zinc-blende, ordered zinc-blende and ordered chalcopyrite. The value of θ obtained from the 1/χ vs. T plot is shown to be a weighted mean of the separate values of θ for the phases present. The relative sizes of the T_g peaks and the values of θ for any given sample gives an indication of the amount of each phase present. These amounts were varied by using different methods of heat treatment and it was shown that the magnetic behaviour was consistent with the T(z) phase diagram for the two alloy systems.     

DK UK10-A系列音箱

UK10-A系列适用于各种固定安装的高档演艺吧、慢摇吧及现场表演。该系列采用高功率扬声器单元和轻巧的箱体搭配，通过计算机优化设计，达到平滑的特性、展宽的频响特点和良好的控制覆盖性能。     

养分胁迫条件下石斛兰叶片 表面结构的电镜观察

本文运用扫描电镜(SEM)技术，对石斛兰在养分胁迫条件下叶片的表面结构作了扫描观察。发现当养分胁迫时，叶表面角质层花纹发生改变，叶片气孔形状，数量均受养分营养状况的制约。缺S时叶片角质层被剥蚀，缺K时叶片表面有结晶状物质。     

光电化学法测定硅中少子扩散长度

本文将Gartener方程应用于硅材料,并提出了称之为I_o/I_(ph)-α~(-1)法的光电化学法,用于测定硅中少子扩散长度.文中研究了实验条件对测量结果的影响,讨论了该法的实用价值和给出了与SPV法对比的实验结果.