Mechanical,elastic, anisotropy,and electronic properties of monoclinic phase of m-Si_xGe_(3-x)N_4

The structural,mechanical,elastic anisotropic,and electronic properties of the monoclinic phase of m-Si_3N_4,mSi_2GeN_4,m-SiGe_2N_4,and m-Ge_3N_4are systematically investigated in this work.The calculated results of lattice parameters,elastic constants and elastic moduli of m-Si_3N_4and m-Ge_3N_4are in good agreement with previous theoretical results.Using the Voigt–Reuss–Hill method,elastic properties such as bulk modulus B and shear modulus G are investigated.The calculated ratio of B/G and Poisson’s ratio v show that only m-SiGe_2N_4should belong to a ductile material in nature.In addition,m-SiGe_2N_4possesses the largest anisotropic shear modulus,Young’s modulus,Poisson’s ratio,and percentage of elastic anisotropies for bulk modulus ABand shear modulus AG,and universal anisotropic index AUamong m-Si_xGe_(3-x)N_4(x=0,1,2,3.)The results of electronic band gap reveal that m-Si_3N_4,m-Si_2GeN_4,m-SiGe_2N_4,and m-Ge_3N_4 are all direct and wide band gap semiconducting materials.     

机载VHF通信电台闪电间接效应试验与失效分析

以某型甚高频（VHF）通信电台为试验对象开展了闪电间接效应试验及失效分析。试验结果表明,通信电台的音频响应、谐波失真、发射功率、频率稳定度和调制深度对闪电电磁脉冲的敏感性较低,而接收灵敏度较为敏感,接收灵敏度的显著退化可作为VHF通信电台在闪电作用下发生失效的典型判据之一,VHF通信电台接收功能较发射功能更容易受到闪电影响。设备失效分析表明,闪电作用下VHF通信电台发生失效的主要机理为射频前端低噪声放大器失效和射频前端滤波器对地电感器与电容器熔融烧毁。     

COTS IP适航审定技术研究

机载电子硬件承担的系统功能越来越多,基于成本考虑,使用COTS IP成为一种趋势,也为适航审定带来挑战。首先分析了COTS IP在机载电子硬件设计中的使用位置及带来的风险,研究了当前适航审查需求,然后依据局方文件和审定经验提出了建议的评估过程,并总结适航审查要素。研究成果有助于解决COTS IP的适航审定问题,为现有机载电子硬件设计保证方法提供参考。     

基于SIFT算法的多表情人脸识别

目前人脸识别系统在识别表情变化的人脸图像时识别准确率会降低,多表情人脸识别在人脸识别领域仍是一个热门的研究方向。本文采用SIFT算法对多表情人脸进行识别,在多表情人脸库上进行了两类仿真实验:实验一中对比了同一个人的不同表情的识别效果,实验二中对比了两个不同的人的相同表情的识别效果,实验结果表明SIFT算法能够克服不同人脸间的整体相似性并能有效提取出人脸的局部细节特征。对Jaffe表情库进行仿真实验,取得了当阈值T=0.35时对多表情人脸图像的正确识别率95.69%,实验结果表明,将SIFT算法应用于多表情人脸识别有巨大的潜在科研价值。     

基极注入强电磁脉冲对双极晶体管的损伤效应和机理

建立了双极晶体管(BJT)在强电磁脉冲作用下的二维电热模型, 对处于有源放大区的BJT在基极注入强电磁脉冲时的瞬态响应进行了仿真. 结果表明, BJT烧毁点位置随注入脉冲幅度变化而变化, 低脉冲幅度下晶体管烧毁是由发射结反向雪崩击穿所致, 烧毁点位于发射结柱面区; 而在高脉冲幅度下, 由基区-外延层-衬底组成的p-n-n⁺ 二极管发生二次击穿导致靠近发射极一侧的基极边缘率先烧毁; BJT的烧毁时间随脉冲幅度升高而减小, 而损伤能量则随之呈现减小-增大-减小的变化趋势, 因而存在一个极小值和一个极大值. 仿真与实验结果的比较表明, 本文建立的晶体管模型不但能预测强电磁脉冲作用下BJT内部烧毁发生的位置, 而且能够得到损伤能量. 关键词： 双极晶体管 强电磁脉冲 烧毁点位置 损伤能量     

不同样式的高功率微波对双极晶体管的损伤效应和机理

结合Si基n⁺-p-n-n⁺ 外延平面双极晶体管, 通过分析器件内部的温度分布变化以及电流密度和烧毁时间随信号幅值的变化关系, 研究了其在三角波信号、正弦波信号和方波脉冲信号等三种样式的高功率微波信号作用下的损伤效应和机理. 研究表明, 三种高功率微波信号注入下器件的损伤部位都是发射结, 在频率和信号幅值相同的情况下方波脉冲信号更容易使器件损伤; 位移电流密度和烧毁时间随信号幅值的增大而增大, 而位移电流在总电流所占的比例随信号幅值的增大而减小; 相比于因信号变化率而引起的位移电流, 信号注入功率在高幅值信号注入损伤过程中占主要作用. 利用数据分析软件, 分别得到了三种信号作用下器件烧毁时间和信号频率的变化关系式. 结果表明, 器件烧毁时间随信号频率的增加而增加, 烧毁时间和频率都符合t= af^b的关系式. 关键词： 双极晶体管 高功率微波 损伤机理 信号样式     

Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

The thermal failure induced by high power microwave(HPM) in a complementary metal oxide semiconductor(CMOS) inverter is investigated and its dependence on microwave parameters is discussed in detail. An analytical model of the temperature distribution is established and the relationships between hotspot temperature and pulse width and between hotspot temperature and frequency are predicted, which reveals a more severe rise in temperature under the influence of microwave with longer width and lower frequency. The temperature variation mechanism and the theoretical temperature model are validated and explained by the simulation. Furthermore, variation trend of damage threshold with microwave parameters is derived theoretically, and the conclusions are consistent with simulation results and reported data.     

Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter

The instantaneous reversible soft logic upset induced by the electromagnetic interference(EMI) severely affects the performances and reliabilities of complementary metal–oxide–semiconductor(CMOS) inverters. This kind of soft logic upset is investigated in theory and simulation. Physics-based analysis is performed, and the result shows that the upset is caused by the non-equilibrium carrier accumulation in channels, which can ultimately lead to an abnormal turn-on of specific metal–oxide–semiconductor field-effect transistor(MOSFET) in CMOS inverter. Then a soft logic upset simulation model is introduced. Using this model, analysis of upset characteristic reveals an increasing susceptibility under higher injection powers, which accords well with experimental results, and the influences of EMI frequency and device size are studied respectively using the same model. The research indicates that in a range from L waveband to C waveband, lower interference frequency and smaller device size are more likely to be affected by the soft logic upset.     

Strain effects on band structure of wurtzite ZnO： a GGA ＋ U study

Band structures in wurtzite bulk ZnO/Zn1-xMgxO are calculated using first-principles based on the framework of generalized gradient approximation to density functional theory with the introduction of the on-site Coulomb interaction. Strain effects on band gap, splitting energies of valence bands, electron and hole effective masses in strained bulk ZnO are discussed. According to the results, the band gap increases gradually with increasing stress in strained ZnO as an Mg content of Znl-xMgxO substrate less than 0.3, which is consistent with the experimental results. It is further demonstrated that electron mass of conduction band （CB） under stress increases slightly. There are almost no changes in effective masses of light hole band （LHB） and heavy hole band （HHB） along [00k] and [k00] directions under stress, and stress leads to an obvious decrease in effective masses of crystal splitting band （CSB） along the same directions.