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41.
The Al2O3−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation.
The surface states are, most likely, located in the insulator Al2O3 with a concentration varying from 4·1018 to 1019 cm−3 eV−1. The surface states have a negligible influence on the thin-film transistor operation. 相似文献
42.
J. C. Fabris S. V. B. Gonçalves P. E. de Souza 《General Relativity and Gravitation》2002,34(12):2111-2126
The mass power spectrum for a Universe dominated by the Chaplygin gas is evaluated numerically from scales of the order of the Hubble horizon to 100 Mpc. The results are compared with a pure baryonic Universe and a cosmological constant model. In all three cases, the spectrum increases with k, the wavenumber of the perturbations. The slope of the spectrum is higher for the baryonic model and smaller for the cosmological constant model, the Chaplygin gas interpolating these two models. The results are analyzed in terms of the sound velocity of the Chaplygin gas and the moment the Universe begins to accelerate. 相似文献
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Summary In 1980 Dahmen-DeVore-Scherer introduced a modulus of continuity which turns out to reflect invariance properties of compound cubature rules effectively. Accordingly, sharp error bounds are derived, the existence of relevant counterexamples being a consequence of a quantitative resonance principle, established previously. 相似文献
46.
Electron spin resonance spectra of Mn2+ in diluted solid solutions of MnO2 in Y2O3 have been studied at room temperature for Mn concentrations between 0.20 and 2.00 mol%. Isolated Mn2+ ions in sites with two different symmetries were observed, as well as Mn2+ ions coupled by the exchange interaction. The relative concentration of isolated to coupled Mn2+ ions decreases with increasing manganese concentration. The results are consistent with the assumption that the manganese ions occupy preferentially the C2 symmetry sites. A theoretical calculation based on this model yields an effective range of the exchange interaction between Mn2+ ions of 0.53 nm, of the same order as that of Mn2+ ions in CaO. 相似文献
47.
de Souza P. A. Garg V. K. Klingelhöfer G. Gellert R. Gütlich P. 《Hyperfine Interactions》2002,139(1-4):705-714
A portable Mössbauer spectrometer, developed for extraterrestrial applications, opens up new industrial applications of MBS. But for industrial applications, an available tool for fast data analysis is also required, and it should be easy to handle. The analysis of Mössbauer spectra and their parameters is a barrier for the popularity of this wide-applicable spectroscopic technique in industry. Based on experience, the analysis of a Mössbauer spectrum is time-consuming and requires the dedication of a specialist. However, the analysis of Mössbauer spectra, from the fitting to the identification of the sample phases, can be faster using by genetic algorithms, fuzzy logic and artificial neural networks. Industrial applications are very specific ones and the data analysis can be performed using these algorithms. In combination with an automatic analysis, the Mössbauer spectrometer can be used as a probe instrument which covers the main industrial needs for an on-line monitoring of its products, processes and case studies. Some of these real industrial applications will be discussed. 相似文献
48.
In intonation research, prominence-lending pitch movements have either been described on a linear or on a logarithmic frequency scale. An experiment has been carried out to check whether pitch movements in speech intonation are perceived on one of these two scales or on a psychoacoustic scale representing the frequency selectivity of the auditory system. This last scale is intermediary between the other two scales. Subjects matched the excursion size of prominence-lending pitch movements in utterances resynthesized in different pitch registers. Their task was to adjust the excursion size in a comparison stimulus in such a way that it lent equal prominence to the corresponding syllable in a fixed test stimulus. The comparison stimulus and the test stimulus had pitches running parallel on either the logarithmic frequency scale, the psychoacoustic scale, or the linear frequency scale. In one-half of the experimental sessions, the test stimulus was presented in the low register, while the comparison stimulus was presented in the high register, and, conversely, for the other half of the sessions. The result is that, in all cases, stimuli are matched in such a way that the average excursion sizes in different registers are equal on the psychoacoustic scale. 相似文献
49.
Possible Loss and Recovery of Gibbsianness¶During the Stochastic Evolution of Gibbs Measures 总被引:1,自引:1,他引:0
A.C.D. van Enter R. Fernández F. den Hollander F. Redig 《Communications in Mathematical Physics》2002,226(1):101-130
We consider Ising-spin systems starting from an initial Gibbs measure ν and evolving under a spin-flip dynamics towards a
reversible Gibbs measure μ≠ν. Both ν and μ are assumed to have a translation-invariant finite-range interaction. We study
the Gibbsian character of the measure νS(t) at time t and show the following:
(1) For all ν and μ, νS(t) is Gibbs for small t.
(2) If both ν and μ have a high or infinite temperature, then νS(t) is Gibbs for all t > 0.
(3) If ν has a low non-zero temperature and a zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t and non-Gibbs for large t.
(4) If ν has a low non-zero temperature and a non-zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t, non-Gibbs for intermediate t, and Gibbs for large t.
The regime where μ has a low or zero temperature and t is not small remains open. This regime presumably allows for many different scenarios.
Received: 26 April 2001 / Accepted: 10 October 2001 相似文献
50.
A simple simulation scheme that simultaneously describes the growth kinetics of SiO2 films at the nanometer scale and the SiOx/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law. 相似文献