衰减全反射型电压传感器的理论和实验研究

提出了一种新型反射型聚合物波导电压传感器理论,并且进行了实验研究。这种电压传感器采用棱镜波导耦合结构,在棱镜下底面依次镀有金属膜一聚合物一金属膜三层结构。通过两层金属膜对极化聚合物加电压,利用聚合物材料电光效应和导模共振吸收峰对聚合物折射率的敏感特性,通过反射光强的测量来确定作用电压的变化值。实验中的测试电压范围是从-140V至 140V,得到的线性度值为0．991,电压测量的分辨力为0．1V,电压测量灵敏度系数为0．0011V^-1。实验表明这种电压传感器具有良好的线性和较高的灵敏度。     

10.6μm激光诱导扩散中热致破坏的抑制

在半导体激光诱导扩散实验中,用连续波CO2 10．6μm激光聚焦后照射基片表面。为实现局部区域的选择扩散,激光光斑半径仅数十微米。要使曝光区温度达到扩散实验要求,必须使曝光区功率密度很高。另一方面,Si、InP等半导体材料对10．6μm波长激光的吸收系数随温度的升高而增大,这导致实验时容易产生热致破坏,损伤基片。在分析热致破坏的产生机理后,提出了在聚焦激光束照射下,曝光区温度的数值计算方法。计算结果表明,在半导体基片初始温度为室温时,以恒定功率的激光束照射基片,曝光区温度不能稳定在扩散试验需要的温度范围。在此基础上,提出了预热基片及对曝光区温度进行实时控制等抑制热致破坏的方法,有效地克服了这一困难。这对于用激光微细加工制作出高性能的单片光电集成电路(OEICs)器件有重要意义。     

Determination of q=1 surface by the variation of pellet ablation rate on the HL-1M

Strong drop of Hα emission has been observed on the HL-1M tokamak by means of a detector array while a pellet crosses the q=1 surface. In this article, the q=1 surface has been determined precisely by the interval and the shape of the Hα emission striations on the pellet trajectory due to the variation of pellet ablation rate. The q-profile and current density distribution at the plasma centre region have been calculated according to the pellet ablation rate and the magnetic shear feature.     

Atomic dynamics in the mode－mode competition system

The atomic dynamical properties in the system with competing k-photon and l-photon transitions are studied fully by means of quantum theory. We discuss the influences of the mode－mode competition, the relative competing strengths of the atom and the two-mode field, and the initial state of the system on the atomic dynamics. We show that the presence of the mode－mode competition can result in quite a periodical collapses-revivals of the atomic inversion and the increase of the initial photons of the system can lead to the collapse－revival phenomenon and prolong the revival time of the atomic inversion.     

胶体金纳米颗粒的荧光光谱特性

研究了胶体金纳米颗粒的荧光激发光谱和荧光发射光谱特性.增大激发光的波长,发射峰相应红移并在629nm达到最强,对应的灵敏激发波长为473nm.增加金纳米颗粒粒径,观察到发射谱的峰值先增大然后减小.发射峰产生的原因在于电子与带间空穴的复合导致非线性共振光散射.发射峰强度和金颗粒粒径的关系可以用表面等离子体震荡引起的局域场增强来解释,数值计算结果和实验结果能较好的吻合.     

多节摆的自由振动分析

利用拉格朗日方程,导出了多节摆系统的运动微分方程.根据三对角阵的性质,给出了振动系统的特征多项式和特征矢量的递推公式,并以三节摆为例,说明了结果的应用,用此方法验证了<力学与实践>2002年第24期<多自由度振动系统的简正坐标和简正振动模式>一文中的结果.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

铒离子注入碳化硅的射程和退火行为研究

用300—500 keV能量的铒(Er)离子注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×10¹⁵ cm^-2 的Er离子注入6H-SiC晶体的平均投影射程R_p和射程离散ΔR_p,将测出的实验值和TRIM软件得到的理论模拟值进行了比较,发现R_p的实验值与理论值符合较好,ΔR_p的实验值和理论值差别大一些 关键词： 离子注入 投影射程和射程离散 退火行为 卢瑟福背散射技术     

只需一个解调器的偏分复用差分相移键控系统实验实现

偏分复用技术是提高系统传输速率的有效方法之一.搭建了被称为双偏振态差分相移键控(Dual-Pol.DPSK)码的新型偏分复用实验系统,它与具有相同的比特波特比的差分正交相移键控(DQPSK)调制方式相比,接收机要简单很多.与传统的偏振分解复用(POLMUX)技术相比,它无需偏振控制或偏振跟踪,只需一个解调器和一个平衡探...     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.