太阳运动模拟平台的单片机控制

针对用太阳运动模拟平台实现太阳运行位置的全面预测和重现这一问题,提出了采用单片机对该平台进行控制,电机通过变频实现不同时间段不同速率运动模拟太阳运行轨迹的方法。根据输入日期计算出太阳的高度角和方位角,并转换为驱动电机的脉冲数和频率,电机带动执行机构运动使模拟光源到达预定位置。用编码器测量电机实际脉冲,定期进行误差校正来提高系统的稳定性和精度,减少误差。经过实验验证,该平台能够使模拟光源按照预计的轨迹运动,得出该方法是可行的,所设计的程序具有可靠性的结论。     

LNG尾气中提取氦气的流程分析

LNG产业的蓬勃发展为资源利用开发了新的途径。基于液化天然气尾气的特点,文中提出了一种与液化天然气产业联产氦气的新方法,设计了相应的工艺流程。通过对尾气进行增压脱酸、冷凝分离、加氧脱氢、内纯化除杂等多种处理,可对天然气尾气中的氦进行有效提取分离,最终达到纯氦的技术指标。该方法有望使国内不具备工业提取价值的氦资源重新得到利用,在国内建立一种新型的氦供应途径。     

电容式液氢密度计冷冲击性能试验研究

建立了一套电容式液氢密度计冷冲击试验系统,对新研制的密度计传感器和变送器进行液氢工况下的联合调试,研究其在液氢冲击下的数据采集传输转换性能。从理论分析、系统设计、试验验证、数据分析四方面详细阐述了该试验过程。试验结果表明:密度计在液氢下的信号采集传输特性与理论分析特性基本吻合,输出信号正常,实现了该试验预期效果。     

铜铟铝硒硫薄膜的低成本非真空混合法制备

采用溶剂热法制备出铜铟铝硒Cu(In,Al)Se₂ (CIASe)粉末,然后滴涂铜铟铝硒CIASe浆料获得前驱体薄膜,最后通过硒化/硫化过程制备出铜铟铝硒CIASe和铜铟铝硒硫CIASeS薄膜．通过XRD、SEM、XRF及光吸收等表征,发现所制备的薄膜为单相的黄铜矿结构,具有(112)择优取向．同时,在使用硫元素替代硒之后,薄膜的XRD主峰向高的2θ角度漂移,多孔薄膜也变得更加致密．薄膜带隙值也增加到更为合适的范围,从1.21 eV增加到1.33 eV,这也说明了硫化过程有利于提高CIASeS薄膜的质量．     

动态加载过程中石英玻璃诱导水的快速结晶相变

在气炮加载试验中利用弹载光源原位测试技术,观测了夹于石英玻璃之间的水在动态压缩过程中的透光特性. 通过其光透射特性研究了水的冲击相变. 实验结果发现液态水在动态冲击压缩过程中, 其压力低于2 GPa 就出现透明性变差的现象,而且水的透明性下降与石英玻璃的存在有关,是一种石英诱导水的结晶相变现象.     

1,2,3-三氮唑基团连接的双丙烯酸酯单体环聚合形成PEG聚合物刷的合成及表征

通过带有PEG官能团的双丙烯酸酯大分子单体的RAFT环聚合反应合成含有十一元环重复结构的PEG大分子刷．不同PEG长度的连接1,2,3-三氮唑的双丙烯酸酯大分子单体通过点击化学反应合成．PEG侧链的较大位阻效应影响双丙烯酸酯大分子单体的聚合行为,以致于双丙烯酸酯大分子单体优先进行环化聚合反应而不发生交联反应．核磁数据和凝胶渗透色谱证明高效的环化聚合反应,而且没有副反应发生．PEG大分子刷在紫外光激发下有较强的荧光,而荧光则强烈依赖于聚合物刷的浓度,这归因于环聚合物在水中的聚集．PEG大分子刷的荧光能被DNA淬灭．     

Multi-way dual Cheeger constants and spectral bounds of graphs

We introduce a set of multi-way dual Cheeger constants and prove universal higher-order dual Cheeger inequalities for eigenvalues of normalized Laplace operators on weighted finite graphs. Our proof proposes a new spectral clustering phenomenon deduced from metrics on real projective spaces. We further extend those results to a general reversible Markov operator and find applications in characterizing its essential spectrum.     

低渗温热腹腔灌注化疗治疗恶性腹腔积液的临床研究

目的 评价低渗温热腹腔灌注化疗治疗恶性腹腔积液的疗效及不良反应。方法 行腹腔穿刺置单腔中心静脉导管,外接引流袋,记录腹水引流量,当日排放腹水1 500ml 后,予加热至43~45℃注射用双蒸馏水1 000ml 行腹腔灌注,次日重复放液1 500ml,再予加热至43~45℃注射用双蒸馏水1 000ml 行腹腔灌注,并于灌注后腹腔注入顺铂60mg、氟尿嘧啶500mg 并封管,治疗期间常规给予简单水化、对症止吐等治疗。结果 31 例恶性腹腔积液患者共完成低渗温热腹腔灌注化疗42 周期,完全缓解7例,部分缓解15,稳定5 例,进展4 例,完全缓解+ 部分缓解占70.97%。中位进展时间（TTP）3.6个月（2～9 个月）, 中位生存期（MST）5.6 个月。毒副反应以消化道反应为主。结论 低渗温热腹腔灌注化疗治疗恶性腹腔积,在延长患者的生存期、提高生活质量方面效果较好,临床上可推荐应用。     

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

A wealth of studies have confirmed that the low‐field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro‐mechanism. Recently, HfO₂ thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub‐coercive polarization reversal properties were investigated for 10 nm thick Si‐doped HfO₂ thin films. The applicability of the Rayleigh law to ultra‐thin ferroelectric films was first confirmed, indicating the existence of a multi‐domain structure. Since the grain size is about 20–30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)