A micro-scale strain rosette for residual stress measurement by SEM Moiré method

In this paper,a new method combining focused ion beam(FIB)and scanning electron microscope(SEM)Moirétechnique for the measurement of residual stress at micro scale is proposed.The FIB is employed to introduce stress relief like the macro ring-core method and fabricate gratings with a frequency of 5000 lines/mm on the measured area of the sample surface.Three groups of gratings in different radial directions are manufactured in order to form a micro-scale strain rosette.After milling ring-core by FIB,the deformation incurred by relief of the stress will be recorded with the strain rosette.The displacement/strain field can be measured using SEM scanning Moiréwith random phase-shifting algorithm.In this study,the Nickel alloy GH4169 sample(which was processed by laser shock peening)is selected as a study object to determine its residual stress.The results showed that the components of the in-plane principal stresses were-359 MPa and-207 MPa,respectively,which show good agreement with the results obtained from the available literature.     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fermi liquid breakdown and evidence for superconductivity in YFe2Ge2

In the d‐electron system YFe₂Ge₂, an unusually high and temperature dependent Sommerfeld ratio of the specific heat capacity C /T ～ 100 mJ/(mol K²) and an anomalous power law temperature dependence of the electrical resistivity signal Fermi liquid breakdown, probably connected to a close‐by quantum critical point. Full resistive transitions and DC diamagnetic screening fractions of up to 80% suggest that pure samples of YFe₂Ge₂ superconduct below 1.8 K. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Reducing the Entropic Uncertainty via Non-Markovian Effect and Detuning in the Presence of Quantum Memory ∗

The influence of non-Markovian effect and detuning on the entropic uncertainty in the presence of quantum memory is studied by the time-convolutionless master-equation approach. The result shows that the entropic uncertainty in the presence of quantum memory is obviously dependent on both detuning and non-Markovian effect. The bigger the detuning is and the stronger the non-Markovian effect is, the smaller the entropic uncertainty is. Its physical explanation is that the known quantum information stored in the quantum memory can reduce or eliminate the entropic uncertainty about the measurement outcomes of another particle, which is entangled with the quantum memory.     

Solvothermal synthesis and electrochemical performance of Ag-doped V6O13 as cathode material for lithium-ion battery

For the first time, belt-like V₆O₁₃ precursor was synthesized via a simple solvothermal method. Rod-like Ag-doped V₆O₁₃ was successfully synthesized by this method followed by heating at 350 °C. Both crystal domain size, electronic conductivity, and the lithium diffusion coefficient of the Ag-doped V₆O₁₃ samples are influenced by the added amount of AgNO₃. When the amount of AgNO₃ is 0.008 g, the product is rod-like particles, which are 0.1–0.3 μm wide and 1–2 μm long, and exhibits the best electrochemical performance. The enhanced electrochemical performance originates from its higher total conductivity, higher lithium diffusion coefficient, and better structural reversibility.     

双流体等离子体模型的动力学可容变分

动力学可容变分方法是一种广义哈密顿系统中的李扰动变换方法,能自动保证卡西米尔函数在相应阶数上的守恒性质.通过动力学可容方法得到了双流体在欧拉描述中的一组约束变分,而后利用这组变分对双流体哈密顿量取极值得到了平衡方程.     

耦合系统的朗之万动力学产生法

提出一种朗之万动力学方法获取处于热平衡态耦合系统内部振子坐标,数值模拟了单端固定简谐振子链的时间演化行为,并将其平衡性质与解析解进行了比较.结果表明了朗之万动力学方法的有效性.推广应用于非简谐四次方型耦合系统,模拟得到振子的四次方均坐标,与理论值验证;以模拟结果作为样本点计算哈密顿量,其能量分布与Boltzmann分布相符.     

H_2气氛退火处理对Nb掺杂TiO_2薄膜光电性能的影响

采用电子束沉积方法,以钛酸锶(SrTiO3)为衬底制备铌(Nb)掺杂TiO2薄膜并研究后续H2气氛退火处理对其薄膜样品光电性能的影响.结果发现H2气氛热退火处理能有效改善Nb掺杂TiO2薄膜的导电率,最佳电阻率达到5.46×10-3Ω·cm,在可见光范围内的透光率为60%—80%.导电性能的改善与H2气氛退火处理后多晶薄膜的晶粒尺寸变大和大量的氧空位形成及H原子掺杂有关.     

棒-板电极下缩比气隙辉光放电相似性的仿真研究

建立了棒-板电极下氩气直流放电的流体模型,利用有限元法对几何位形相似的两个气隙放电过程进行了数值求解.两放电气隙外加电压相同,气隙线性尺寸的比值为10:1,气压分别为1 Torr和10 Torr.仿真得到了两相似气隙的放电的伏安特性曲线以及放电物理量(如电位、电场、电子密度、离子密度、电子温度等)的空间分布.根据气体放电相似性的基本结论,检验了气隙对应物理量之间的数值关系.结果表明:两相似气隙的放电类型为正常辉光放电,对应放电物理量之间存在相似性理论指出的比例关系,且在相同幅值的直流电压作用下,气隙放电的工作点相同.这将为利用气体放电相似性来外推相似气隙的放电特性提供一定的理论依据.     

脉冲激光辐照可见光面阵CCD的入瞳衍射效应

采用波长为532nm的脉冲激光从31.5m的距离辐照可见光面阵电荷耦合器件(CCD),实验观察到了规律性圆环条纹的产生。通过增大激光束的入射角度、调节衰减倍率、重复频率和作用距离,研究了这些规律性圆环条纹的产生条件和机理。结果发现:保持激光器与CCD的作用距离31.5m不变,在激光束的入射角小于或者稍稍大于光学系统半视场角6.8°的情况下,只要光学系统入瞳处的功率密度达到10-3 W/cm2量级,就可以观察到规律性的圆环条纹。通过对探测器表面能量分布进行数学仿真,证实规律性的圆环条纹是由于光学系统入瞳的衍射效应而产生的。