移动火焰锋面(MFF)模型火焰锋面确定条件的进一步改进

考虑碳粒表面还原反应的移动火焰锋面模型(MFF-Ⅰ)在推导火焰锋面位置时,仅考虑了碳粒表面氧化反应的影响.本文综合考虑碳粒表面的氧化反应、还原反应对火焰锋面位置的影响,给出更严格的推导,即MFF-Ⅱ模型.在通常的燃烧工况下,改进模型MFF-Ⅱ与原始模型MFF-Ⅰ相比,预报结论基本一致.但对于较低氧浓度的工况,比如再燃、气化问题,改进模型MFF-Ⅱ同样可以给出可信的预报结果,而这是MFF-Ⅰ模型所不及的.     

二次风率对分级进风燃烧室内湍流燃烧与NOx生成的影响

本文在分级进风燃烧室的热态实验装置上,测量了燃烧室内湍流燃烧的温度场和组分浓度场,研究了分级进风的流量比率即二次风率对燃烧及NOx生成的影响.得到了四组不同二次风率下燃烧室内气体温度和O2、CO2、CO与NO浓度的分布.     

[5‐(p‐alkoxy)phenyl‐10, 15, 20‐tri‐phenyl] porphyrin and their rare earth complex liquid crystalline

Three series of porphyrin liquid crystalline compounds, [5‐(p‐alkoxy)phenyl‐10, 15, 20‐tri‐phenyl] porphyrin and their rare earth complexes (Tb (III), Dy (III), Er (III), Yb (III)), with a hexagonal columnar discotic columnar(Col_h) phase have been synthesized. These compounds were characterized by elemental analysis, molar conductances, UV‐visible spectra, infrared spectra, luminescence spectra, and cyclic voltammetry. These compounds exhibit more than one mesophases, which transition points of temperature change from ?33.6 to 16.0 °C, and transition points of temperature for isotropic liquid also increase from 4.9 to 38.2 °C, with increasing chain length. Their surface photovoltage (SPV) response have also been investigated by the means of surface photovoltage spectroscopy (SPS) and field‐induced surface photovoltage spectroscopy (EFISPS). It was found that their SPV bands are analogous with the UV‐visible absorption spectra and derived from the same transition. Copyright © 2007 John Wiley & Sons, Ltd.     

超疏水聚合物表面的水滴蒸发模拟

基于质量守恒和Fick第一定律，模拟了水滴在超疏水聚合物表面的蒸发全过程．研究从以往的接触角<90±扩展到>150±，液滴形貌扩展为椭球球帽模型进行疏水表面蒸发模拟．水滴在超疏水PC和FPU/PMMA表面蒸发的实验结果显示，计算的椭球球帽模型可以更好的反映出液滴接触角和高度的变化情况，并且不同聚合物表面接触角的相同变化趋势也揭示出微-纳二级结构表面结构不仅影响液滴接触角，也影响液滴蒸发模式．     

Field emission from nano-patterned amorphous carbon

Electron emission from nano-patterned amorphous carbon is realized in this paper. The patterned carbon consists of islands with size of tens of nanometers, and is formed by etching uniform carbon film in oxygen plasma using a bismuth island-like film as the mask. Uniform and stable electron emission is reproducibly obtained, and the emission efficiency is above 2% at an anode voltage of 3 kV. Small carbon particles between large islands are supposed to be necessary for stable electron emission.     

The effects of hydrogen plasma pretreatment on the formation of vertically aligned carbon nanotubes

The effects of H₂ plasma pretreatment on the growth of vertically aligned carbon nanotubes (CNTs) by varying the flow rate of the precursor gas mixture during microwave plasma chemical vapor deposition (MPCVD) have been investigated in this study. Gas mixture of H₂ and CH₄ with a ratio of 9:1 was used as the precursor for synthesizing CNTs on Ni-coated TiN/Si(1 0 0) substrates. The structure and composition of Ni catalyst nanoparticles were investigated by using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (XTEM). Results indicated that, by manipulating the morphology and density of the Ni catalyst nanoparticles via changing the flow rate of the precursor gas mixture, the vertically aligned CNTs could be effectively controlled. The Raman results also indicated that the intensity ratio of the G and D bands (I_D/I_G) is decreased with increasing gas flow rate. TEM results suggest H₂ plasma pretreatment can effectively reduce the amorphous carbon and carbonaceous particles and, thus, is playing a crucial role in modifying the obtained CNTs structures.     

Propagation properties of beams generated by Gaussian mirror resonator in uniaxial crystals

Based on the paraxial vectorial theory of beams propagating in uniaxially anisotropic media, we have derived the analytical propagation equations of beams generated by Gaussian mirror resonator (GMR) in uniaxial crystals, and given the typical numerical example to illustrate our analytical results. Due to the anisotropy crystals, the ordinary and extraordinary beams originated by incident beams generated by GMR propagate with different diffraction lengths, thus the linear polarization state and axial symmetry of the incident beams generated by GMR do not remain during propagating in crystals.     

A Scheme for Generating Entangled Squeezed States Based on Cavity QED

We propose a scheme for generating entangled squeezed vacuum states of electromagnetical fields. The scheme is based on cavity QED. In this scheme, an atom interacts, successively, with a classical field, two quantum cavity fields, and another classical field. By detecting the final states of the atom, the two quantum cavity fields will be projected to an entangled state.     

Energy of a Polaron in a Wurtzite Nitride Finite Parabolic Quantum Well

The effects of electron-phonon interaction on energy levels of a polaron in a wurtzite nitride finite parabolic quantum well （PQW） are studied by using a modified Lee-Low-Pines variational method. The ground state, first excited state, and transition energy of the polaron in the GaN/Al0.3Ga0.7N wurtzite PQW are calculated by taking account of the influence of confined LO（TO）-like phonon modes and the half-spaee LO（TO）-like phonon modes and considering the anisotropy of all kinds of phonon modes. The numerical results are given and discussed. The results show that the electron-phonon interaction strongly affects the energy levels of the polaron, and the contributions from phonons to the energy of a polaron in a wurtzite nitride PQW are greater than that in an A1GaAs PQW. This indicates that ehe electron-phonon interaction in a wurtzite nitride PQW is not negligible.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.