识别过渡金属离子的1,8-萘二甲酰亚胺多胺衍生物荧光传感器的研究

设计合成了用以检测过渡金属离子的荧光化学敏感器体系,它们是由1,8-萘二酰亚胺为荧光团,多胺衍生物为金属离子受体组成．在室温下对其光物理性质的研究中发现,在没有加入过渡金属离子时,由于体系内存在有效的光诱导电子转移过程使得荧光团的荧光被淬灭．加入过渡金属离子后,金属离子受体中的氮原子和过渡金属离子之间的配位作用阻断了光诱导电子转移过程,体系的荧光增强．不同的金属离子受体表现出了和过渡金属离子不同的配位识别能力,并且通过荧光的变化传递出受体-金属离子作用的信息．     

An Economical Magnetocardiogram System Based on High-To SQUIDs

An economical magnetocardiogram （MCG） system is built in our laboratory. It mainly consists of a MCG data acquisition stage equipped with two high-To superconducting quantum interference device （SQUID） magnetometers, a data processing stage with digital filtering and a one-layer μ-metal magnetically shielded room in conjunction with a high-Tc SQUID based active compensation. Experimental results show that a noise level of pico-tesla in MCG profiles, which is necessary for clinical applications, may be achieved with the system. Moreover, stable and convenient operations of the system are demonstrated with simulating MCG measurements.     

Design and end chamfer simulation of PEFP beam line curved dipole magnets

The design, fabrication and field measurement of 11 DC curved dipole magnets for the PEFP Beam Line have been completed. In this paper, a design method for a complex end chamfer using OPERA-3D is proposed. The conventional method for estimating chamfer shape is extended and applied to a curved dipole magnet by a coordinate transformation. Using the interface with CAD software, the complex end chamfer is modeled and fully determined by 3D simulation to meet the field uniformity requirement. The magnetic field measurement results are in good agreement with the simulation. The design considerations, field simulation results, end chamfer development process and measurement results are presented in detail.     

光学式低浓度甲烷气体传感器的研究

针对0.5%VOL以下的低浓度甲烷气体,设计了一种基于近红外可调谐半导体激光吸收光谱的光学式甲烷气体传感器.调谐激光器扫描甲烷气体位于1 653.72 nm处的吸收谱线,采用一次谐波"峰-平比"对气体浓度进行测量.该方案能够有效地消除激光器光强波动和其它同类光功率波动所带来的影响,通过标定后的测试实验表明传感器测量准确...     

Evolution of cooperation among mobile agents

We study the effects of mobility on the evolution of cooperation among mobile players, which imitate collective motion of biological flocks and interact with neighbors within a prescribed radius R. Adopting the the prisoner’s dilemma game and the snowdrift game as metaphors, we find that cooperation can be maintained and even enhanced for low velocities and small payoff parameters, when compared with the case that all agents do not move. But such enhancement of cooperation is largely determined by the value of R, and for modest values of R, there is an optimal value of velocity to induce the maximum cooperation level. Besides, we find that intermediate values of R or initial population densities are most favorable for cooperation, when the velocity is fixed. Depending on the payoff parameters, the system can reach an absorbing state of cooperation when the snowdrift game is played. Our findings may help understanding the relations between individual mobility and cooperative behavior in social systems.     

高性能激光全息防伪标识特性参数测量系统

提出了一种高性能激光全息防伪标识参数的检测方法,利用同一束光在分束器分成的反射光和透射光光强度比例恒定的性质,实时探测衍射方向光强和标识入射光强值,通过一维线性扫描实现激光全息防伪标识衍射效率和信噪比的自动测量。实验数据表明：入射光强测量值相对误差不超过0．29％;衍射效率及信噪比的测量值最大相对误差分别不超过0．81％和2．0％,比第一代检测仪采用的方法测量精度提高近一倍。该方法降低了对光源稳定度的要求,大大降低了激光器的成本,有利于测量仪器的推广。     

取压方式对微通道内单相摩擦阻力特性的影响

本文以去离子水和氮气为工质,在水平圆形微通道(dh=0．336 mm)中采用两种直接取压方式-缝隙取压和小孔取压,对单相摩擦阻力特性进行了实验研究,并通过改变缝隙宽度,研究缝隙宽度对压降测量偏差的影响．     

非对称Halo异质栅应变Si SOI MOSFET的二维解析模型

为了进一步提高深亚微米SOI (Silicon-On-Insulator) MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) 的电流驱动能力, 抑制短沟道效应和漏致势垒降低效应, 提出了非对称Halo异质栅应变Si SOI MOSFET. 在沟道源端一侧引入高掺杂Halo结构, 栅极由不同功函数的两种材料组成. 考虑新器件结构特点和应变的影响, 修正了平带电压和内建电势. 为新结构器件建立了全耗尽条件下的表面势和阈值电压二维解析模型. 模型详细分析了应变对表面势、表面场强、阈值电压的影响, 考虑了金属栅长度及功函数差变化的影响. 研究结果表明,提出的新器件结构能进一步提高电流驱动能力, 抑制短沟道效应和抑制漏致势垒降低效应, 为新器件物理参数设计提供了重要参考. 关键词： 非对称Halo 异质栅 应变Si 短沟道效应     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

短脉冲激光尾流场中的前向Raman散射

用212维粒子模拟分析了前向Raman散射对激光尾流场加速电子的影响.前向Raman散射使脉冲长度在传播方向上被拉长，脉冲后沿变陡，产生的尾流场相速度明显减小，而且超热电子的最大动能明显小于理论估计值.此外激光频率整体向低频移动.