Geometric phase of an open double-quantum-dot system detected by a quantum point contact

We study theoretically the geometric phase of a double-quantum-dot(DQD) system measured by a quantum point contact(QPC) in the pure dephasing and dissipative environments, respectively. The results show that in these two environments, the coupling strength between the quantum dots has an enhanced impact on the geometric phase during a quasiperiod. This is due to the fact that the expansion of the width of the tunneling channel connecting the two quantum dots accelerates the oscillations of the electron between the quantum dots and makes the length of the evolution path longer.In addition, there is a notable near-zero region in the geometric phase because the stronger coupling between the system and the QPC freezes the electron in one quantum dot and the solid angle enclosed by the evolution path is approximately zero,which is associated with the quantum Zeno effect. For the pure dephasing environment, the geometric phase is suppressed as the dephasing rate increases which is caused only by the phase damping of the system. In the dissipative environment,the geometric phase is reduced with the increase of the relaxation rate which results from both the energy dissipation and phase damping of the system. Our results are helpful for using the geometric phase to construct the fault-tolerant quantum devices based on quantum dot systems in quantum information.     

Spin-polarized transport in zigzag graphene nanoribbons adsorbing nonmagnetic atomic chain

We theoretically study the electron transport properties in a ferromagnetic/normal/ferromagnetic tunnel junction, which is deposited on the top of a topological surface. The conductance at the parallel (P) configuration can be much bigger than that at the antiparallel (AP) configuration. Compared P with AP configuration, there exists a shift of phase which can be tuned by gate voltage. We find that the exchange field weakly affects the conductance of carriers for P configuration but can dramatically suppress the conductance of carriers for AP configuration. This controllable electron transport implies anomalous magnetoresistance in this topological spin valve, which may contribute to the development of spintronics. In addition, there shows an existence of Fabry-Perot-like electron interference in our model based on the topological insulator, which does not appear in the same model based on the two dimensional electron gas.     

Ultrafast transverse thermoelectric response in c‐axis inclined epitaxial La0.5Sr0.5CoO3 thin films

Ultrafast transverse thermoelectric voltage response has been observed in c‐axis inclined epitaxial La_0.5Sr_0.5CoO₃thin films. Voltage signals with the rise time of 7 ns have been detected under the irradiation of pulse laser with duration of 28 ns. A concept, named response rate ratio, has been proposed to evaluate the intrinsic response rate, and this ratio in La_0.5Sr_0.5CoO₃is smaller than that in other reported materials. The low resistivity is thought to be responsible for the ultrafast response, as low resistivity induces small optical penetration depth, and response time has a monotonous increasing relationship with this depth.

     

一项从CAA到CAD的工作 ～正交优化法与SPICE相结合

电子电路的计算机辅助设计方法是促进电子技术发展的一种有效工具。本文介绍如何将行之有效的正交优化法与国际盛行的模拟电子电路的分析程序ＳＰＩＣＥ相结合，形成了ＡＣＯＤ软件，将ＣＡＡ扩展为ＣＡＤ。     

Morphology of Polystyrene Core–dPoly(ethylene oxide) Shell Arborescent Copolymer Micelles from Small-Angle Neutron Scattering Analysis

Arborescent (dendrigraft) copolymers with a branched polystyrene (PS) core grafted at the chain termini with deuterated poly(ethylene oxide) segments (PS-dPEO) were characterized in benzene and acetone by small-angle neutron scattering measurements using the contrast matching technique. While copolymers incorporating a G1 (twice-grafted) PS core aggregated to some extent, the portion of the scattering curve corresponding to non-aggregated copolymer molecules could still be analyzed to determine the shape and segment radial density profile for core and shell. These were derived from the pair distance distribution function P(r) and the scattering length density contrast profile Δρ(r) = ρ(r) ? ρ(solvent), obtained by the indirect Fourier transformation and deconvolution methods. The profiles obtained for the G1 copolymer are consistent with a well-defined PS core–dPEO shell morphology, only observed previously for upper generation (G4) polymers with deuterated PS (dPS) chains grafted randomly on arborescent PS substrates. Detailed morphological analysis could not be carried out for an analogous G3 arborescent PS copolymer terminally grafted with dPEO segments due to extensive aggregation in both solvents.     

FeMn掺杂AlN薄膜的制备及其特性研究

采用直流磁控共溅射技术, 以Ar与N₂为源气体, 硅片为衬底成功地制备了Fe, Mn掺杂AlN薄膜. 利用X射线衍射和拉曼光谱研究了工作电流、靶基距离等工艺参数的改变对薄膜结构的影响. 利用扫描电子显微镜和能谱分析仪对薄膜的表面形貌和组成成分进行了分析. 利用振动样品磁强计在室温下对Fe, Mn掺杂AlN薄膜进行了磁性表征. Mn掺杂AlN薄膜表现出顺磁性的原因可能是由于Mn掺杂浓度较高, 在沉积过程部分Mn以团簇的形式存在, 反铁磁性的Mn团簇减弱了体系的铁磁交换作用. Fe掺杂AlN薄膜表现出室温铁磁性, 这可能是AlFeN三元化合物作用的结果. 随着Fe 掺杂AlN薄膜中Fe原子浓度从6.81%增加到16.17%, 其饱和磁化强度M_s由0.27 emu·cm^-3逐渐下降到0.20 emu·cm^-3, 而矫顽力H_c则由57 Oe增大到115 Oe (1 Oe=79.5775 A/m), 这一现象与Fe离子间距离的缩短及反铁磁耦合作用增强有关. 关键词： 直流磁控共溅射 氮化铝薄膜 结构 磁性     

基于非最大纠缠的五粒子Cluster态的高效量子态共享方案

本文提出了一个新的未知量子态共享方案,使用一个非最大纠缠的五粒子Cluster态作为量子通道来实现任意两粒子未知量子态的共享. 即就是发送方（Alice）,接收方（Bob）和控制方（Charlie）共享一个非最大纠缠的五粒子Cluster态. 与以前传统方案不同,在本方案中发送方引入一个辅助粒子,并对其手中的粒子进行正交完备基测量,而接收方不需要引入辅助粒子,只需要执行适当的幺正操作,即可以方便的完成信息的顺利接收. 控制方通过对自己手中的粒子做单粒子投影测量来控制和协助通信双方,使得任意两粒子的未知量子态共享方案得以成功实现. 关键词： 量子态共享 五粒子Cluster态 正交完备基测量 单粒子投影测量     

新生MnO2对直接耐晒蓝脱色的分光光度研究

本文研究了用新生MnO2作吸剂，对水中直接耐晒蓝（B2RL）染料进行脱色的特性，探讨了影响吸附的因素，并给出适宜的吸附条件，在本试验条件下可使B2RL脱色主达95％。     

Influence of the structure parameters on the gain and noise figure in silicon parametric amplifiers based on SOI Rib waveguides

Gain and Noise figure (NF) characteristics in dual-pump parametric amplifier based on silicon on insulator (SOI) Rib waveguides are numerically investigated in the presence of nonlinear losses. The impact of structure parameters of the silicon optical parametric amplifiers (SOPAs) on the gain and the NF are also analyzed. The results show that both the height and the width of the silicon on insulator (SOI) can affect the gain and the NF of SOPAs. 354 nm bandwidth (3 dB) and 8.135 maximum gain can be achieved by tailoring the structure parameters of the SOI rib waveguides. Moreover, the dispersion and the effective mode area of SOI are also analyzed.