Simulation of Three-Spin Interaction in Coupled Cavities Chain

We generalize usual second-order effective Hamiltonian approximation into third-order. Employing the generalized method, we propose a scheme to generate three-spin interaction using coupled cavity chain. We show that the third order term not only improves two parties interaction but also induces direct three-spin interaction which has not been simulated before. By controlling the frequency of laser field, one can obtain next nearest neighbor interaction on the same order with the nearest neighbor’s or the three-spin interaction on the same order as next nearest neighbor’s.     

时间延迟积分型面阵CMOS图像传感器MTF速度失配模型研究

研究了时间延迟积分型面阵互补金属氧化物半导体(CMOS)图像传感器调制传递函数(MTF)速度失配特性,在分析累加级数、像素尺寸、镜头放大倍数、行周期及电机运动速度失配等影响因素的基础上,建立了MTF速度失配模型。基于现场可编程门阵列(FPGA)开发板,搭建面阵CMOS图像传感器实现线阵时间延时积分(TDI)的CMOS测试系统。实验结果表明,在光强为3lx,速度失配M(ΔV/V)<2,8级时间延迟积分与面阵成像相比,MTF值提高50%;当累加级数为8级,速度失配满足M(ΔV/V)=2的速度失配容限时,奈奎斯特频率处的MTF值下降10%,当速度失配达到M(ΔV/V)=10时,MTF值下降35%。     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

量子信令交换机模型设计及性能分析

本文提出了量子信令交换机的模型, 该交换机由经典信息控制模块、交换控制模块和量子交换模块三部分组成. 经典控制模块负责将纠缠初态信息传送给纠缠测量及交换单元并更新路由信息. 交换控制模块实现通路选择, 为纠缠对的分发提供通路. 量子交换模块制备纠缠对, 进行Bell态的测量, 完成纠缠交换. 量子信令交换机可以实现多用户间的信令传输及局域网通信. 通过对交换机的性能分析与仿真, 结果表明该交换机结构简单、安全保密、便于扩展、时延小, 对于构建量子通信网有很好的支撑作用. 关键词： 量子通信 量子信令网 量子信令交换机 纠缠交换     

Quantitative evaluation of equatorial small-angle X-ray scattering for cylindrical fibers

Elongated microvoids, internal fibrillar structure, and edge scattering from both surface refraction cause an equatorial streak in small angle X-ray scattering. A model for analyzing the edge scattering of fibers is proposed. Simulation results indicate that the intensity of edge scattering from surface refraction of a cylindrical fiber is strong and makes an important contribution to the equatorial streak. Two factors influence edge scattering intensity. One is the sample-to-detector distance (D); edge scattering intensity increases with increasing D. The equatorial streak becomes weak when D is shortened. The other factor is the refraction index. Edge scattering intensity increases as the real component of the refraction index decreases. In experiment, weak or even no equatorial streaks were found for samples measured in a roughly index-matching fluid. Edge scattering can be eliminated or weakened, and it can be calculated by comparing the intensities of a cylindrical fiber when it is measured in air and in index-matching fluid. The simulation data are basically in agreement with the experimental data.     

电子束蒸发在不同Ar气氛下外退火制备MgB2超导薄膜

制备高质量的MgB2薄膜是实现MgB2超导电子器件应用的前提和基础.我们用电子束蒸发B膜和Mg/B多层膜为前驱然后后退火的方法,分别在高温区(~900℃)和中温区(~750℃)成功获得了MgB2超导薄膜.改变退火的Ar气压条件,采用B膜前驱退火的样品Tc可达到38K以上,转变宽度0.3K.Mg/B多层膜的结果尽管Tc稍低(Tc~35K),但薄膜表面更加均匀,且避免了高温下Mg蒸汽污染的问题.对于两种前驱退火中观察到的完全不同的退火气压影响,我们认为是与其各自的超导成相过程相联系的,在此基础上我们对退火气压效应给出了自己的分析和解释,为今后进一步细致研究退火过程中的薄膜生长机制提供了参考.     

一种多通道纳秒分幅相机

相机采用棱镜分光,薄片管增强象,电选通分幅。由四个薄片管组成四个通道,每一个通道代表一个单幅相机,分幅时序由专门电控电路进行控制,接触相机记录图象,最短曝光时间3ns,动态空间分辩率5～81lp/mm,最高分幅速率2×10⁸幅/秒,动态范围50°,在爆炸、激光、放电,光谱学等方面有广泛的应用。     

TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

Schottky junctions made from a titanium dioxide nanotube (TiO₂NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO₂NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W^?1, 51, and 1.5 × 10¹² cm Hz^1/2 W^?1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO₂NT array/MLG film Schottky junction PD is elucidated.