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Dr. Masaru Kondo Dr. Shinobu Takizawa Yuzhao Jiang Prof. Dr. Hiroaki Sasai 《Chemistry (Weinheim an der Bergstrasse, Germany)》2019,25(42):9866-9869
The Mills reaction and cyclization of readily available 2-aminobenzyl alcohols and nitrosobenzenes using thionyl bromide provided 2H-indazoles in up to 88 % yields. In the metal-free process, acetic acid played a crucial role for the both Mills reaction and cyclization. A brominated 2H-indazole could also be obtained through the one-pot sequence. 相似文献
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Dr. Si-Yong Qin Yan Jiang Dr. Han Sun Han Liu Prof. Ai-Qing Zhang Prof. Xinxiang Lei 《Angewandte Chemie (Weinheim an der Bergstrasse, Germany)》2020,132(39):17245-17251
Residual dipolar coupling (RDC), a robust anisotropic NMR parameter for structural elucidation of organic molecules, is only accessible in an anisotropic environment. Herein, we introduce a novel alignment medium based on the molecular self-assembly of oligopeptide amphiphile (OPA). This medium is compatible with different intermediate and polar solvent systems, such as CD3OD, [D6]DMSO, and D2O. The preparation of the OPA-based medium is simple and rapid, while only very weak background signals were observed from OPAs. Furthermore, we show that the purity of OPA has only a minor influence on the quality of the RDC data. These advantages allow RDC measurements of organic molecules with different polarities and solubilities with high efficiency and accuracy. 相似文献
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Bo Jin Xi Wang Jing Chen Feng Zhang Xinli Cheng Zhijun Chen 《Applied Surface Science》2006,252(16):5627-5631
The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si1−xGex (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si1−xGex (x is minimal) layer moved to Si/SiO2 interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM). 相似文献
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研究了能量接受离子Ce3+对Er3+上转换发光强度以及Er3+在1.5 μm附近波段发光性能参数的影响,并从能量匹配及能级结构角度出发对Er3+/Ce3+间的能量转移机制进行了分析.分析认为,4 I11/2能级的Er3+通过无辐射能量转移把能量传递给2F5/2能级的Ce3+激发其跃迁至2F7/2能级,而4I11/2能级上的Er3+则无辐射弛豫至4I13/2能级,从而有效降低氟磷酸盐玻璃中Er3+的上转换发光.当Er3+浓度为1.11×1020 cm-3时,Ce3+的最佳掺杂浓度为2.22×1020 cm-3,此时Ce3+的引入不仅可以降低上转换发光,而且有助于提高Er3+在1.5 μm附近波段的荧光强度、发射截面以及4I13/2能级荧光寿命. 相似文献
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The timing relationship between a synchronously pumped mode-locked dye laser and its pump laser is explored experimentally and theoretically. The experimental data is in quantitative agreement with numerical solutions of a semiclassical model that includes no free parameters. The data also agrees qualitatively with an approximate, analytic distillation of this model which is presented here for the first time. Our study has a direct bearing on the jitter and the long term stability of these important ultrashort pulse lasers. 相似文献