A boron-lined proportional counter (BLPC) used in a mixed field of reactors

A boron-lined proportional counter (BLPC) with a count rate limit close to the multi-wire proportional counter was manufactured to measure the mixed field around reactors. After measurement with a standard Am-Be neutron source (activity: 100 mCi), the results show that the operating voltage of the BLPC is 800 V, the plateau length is 100 V and the slope is 13.2%/100 V. The width and rise time of the output pulse of the BLPC are 1.26 μs and 370 ns, respectively. When the BLPC works at a count rate of 1.0×10⁵ count/s, the pulse pile-up probability of the BLPC is 3.6%. A clear peak can be seen in the pulse height spectrum of the BLPC. and the performances illustrate that a BLPC working in pulse mode can serve as a source range detector of reactors.     

Coupled-channels optical calculation of positronben hydrogen resonances

An application of the coupled-channels optical method is given for the energy-dependent phenomena of positron-hydrogen resonances below the n=2 excitation threshold. The equivalent local optical potential is used to account for the target polarization and positronium formation. The calculation includes 9 explicitly physical coupled channels. The lowest S-wave resonance energy position and new resonances are found. Angular dependence of the cross section in the resonance region are investigated.     

单电子晶体管-金属氧化物半导体场效应晶体管多峰值负微分电阻器件

传统的共振隧穿二极管的多峰值负微分电阻器件的峰值数目受到限制，由单电子器件和传统的金属氧化物半导体场效应晶体管(MOSFET)器件组成的多峰值负微分电阻器件在原理上具有无穷多个峰值，并且MOSFET使单电子晶体管(SET)的峰值和谷值电流大小受其源漏电压的影响减小.利用这种多峰值负微分电阻器件实现了多值存储器，该存储器原理上是无穷多值的.并且利用它的折叠的I-V特性，实现了一个4位的Flash A/D转换器，与传统的Flash A/D转换器相比，SET-MOSFET的A/D转换器大大地简化了电路. 关键词： 库仑阻塞 库仑振荡 负微分电阻 多值存储器     

Interference of Two-Component Bose-Einstein Condensates with a Coupling Drive in Presence of Dissipation

The interference of the two-component Bose-Einstein condensates with a coupling drive in the presence of the dissipation is studied. We find that when the two-component Bose-Einstein condensates are initially in the coherent states, for the smaller dissipation parameters compared with that of the rf frequency ωrf, the interference intensity exhibits damply oscillation behavior, whereas when the dissipation parameters are larger than that of the ωrf, the interference intensity exhibits a fast attenuation behavior. As a comparison, the interference intensity in the absence of the dissipation is also studied. We conclude that the dissipation of the system can be evaluated by selecting the ωrf experimentally.     

外形分析-拟合求导法测接触角

在外界来流作用下,液滴在固体表面上呈现周期性振荡特性,接触角的动态变化是表征该过程特性的重要参数, 传统方法不适用此接触角测量。在分析常用接触角测量方法的基础上,提出外形分析-拟合求导法测量动态接触角,同经典测量方法对比表明,外形分析-拟合求导法可很好地满足测量精度要求。     

真空退火对L1_0-CoPt薄膜结构、磁性及表面形貌的影响

本文利用磁控溅射的方法制备了L1_0-CoPt薄膜,研究了不同退火条件对薄膜结构、磁性以及表面形貌的影响.通过优化退火温度、保温时间以及升温速率,制备出了具有大矫顽力、高矩形比、粗糙度小的垂直各向异性L1_0-CoPt薄膜.实验发现,较高的退火温度有利于克服CoPt薄膜有序化转变所需要的能量,同时适当延长退火时间可以提高CoPt薄膜的扩散系数,从而促使无序相fcc转化为L1_0有序相fct结构.此外,退火过程中减缓升温速率可以有效减小薄膜粗糙度,从而形成平整连续膜.     

掺入Ni元素的LiCoO2晶体光谱结构及电子顺磁共振g因子

在弱场图像下,利用Racah不可约张量算符方法得到了三角对称3d4/3d6电子组态的210阶可完全对角化的微扰哈密顿矩阵、最近邻点电荷模型晶体结构常量公式和电子顺磁共振g因子公式.研究了LiCoO2晶体和掺入Ni的LiCoO2:Ni晶体中Co3+的基态能级、晶体结构和电子顺磁共振g因子.考虑了LiCoO2晶体和LiCoO2:Ni晶体中自旋单重态和三重态对Co3+基态能级的影响,讨论了LiCoO2晶体和在LiCoO2晶体中掺杂Ni后Co3+局域结构常量大小的变化是引起Co3+的基态能级变化的主要原因,理论和实验都证实了这一点.还计算了掺杂前后的电子顺磁共振g因子,计算结果与实验值符合得较好.     

Au/SiO2纳米复合薄膜的微结构及光吸收特性研究

用多靶磁控溅射技术制备了Au/SiO2纳米多层薄膜.利用透射电子显微镜以及吸收光谱对Au/SiO2复合薄膜的微观结构、表面形貌及光学性能进行了表征和测试.研究结果表明:单层Au/SiO2薄膜中Au沉积时间小于10s时,分散在SiO2中的Au颗粒随Au的沉积时间的延长而增大;当沉积时间超过10s后,Au颗粒的尺寸几乎不随沉积时间变化,但Au颗粒的形状由网络状结构变为薄膜状结构.[Au(t1)SiO2(600)]×5多层薄膜在540-560nm波长附近有明显的表面等离子共振吸收峰,且吸收峰的强度随Au的沉积时间增加而增强.基于修正后的Maxwell-Garnett (M-G)有效媒质理论,讨论了金属颗粒的形状对等离子共振吸收峰的峰位和强度的影响.模拟的吸收光谱与实验吸收光谱形状、趋势及吸收峰位相符合.     

Au/SiO2纳米多层薄膜的制备及其性质表征

利用多靶磁控溅射技术制备了Au/SiO2纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO2的沉积时间及SiO2的沉积时间一定而改变薄膜厚度时,多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明:具有纳米层状结构的Au/SiO2多层薄膜在560nm波长附近有明显的表面等离子共振吸收峰,吸收峰的强度随Au颗粒的浓度增加而增强,在Au颗粒浓度相同的情况下,复合薄膜光学吸收强度随薄膜厚度的增加而增强.但当金属颗粒的浓度增加到一定程度时,金属颗粒相互接触,没有观察到纳米层状结构,薄膜不显示共振吸收峰特征.用修正后的M-G(Maxwell-Garnett)理论对吸收光谱进行了模拟,得到了与实验一致的结果.     

The effect of configuration complex on dielectronic recombination process in highly ionized plasmas

This paper analyses the effect of configuration complex on dielectronic recombination （DR） process in highly ionized plasmas （Xe^26＋, Dy^38＋, W^46＋） by using the multiconfiguration relativistic Hartree-Fock method. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. The remarkable difference between the isoelectronic trend of the rate coefficients for DR through 3d^94l4l′ and through 3d^94l5l′ is emphasized. The trend of DR through 3d^94l4l′ shows irregularities at relatively low temperature due to the progressive closing of DR channels as atomic number Z increases.