利用爆聚等离子体研究X光激光

对脉冲功率技术驱动的爆聚等离子体过程进行了物理分析,在5％的偏差范围内,得到了和数值计算结果相一致的近似解析公式。计算结果表明,功率在3—4TW,输出电能300—400KJ,技术指标类似PITHON的加速器可以使质量为200—400μg的Kr气爆聚压缩成高温等离子体柱。     

Kq, Scaling of ac susceptibility and the nonlinear response function of high-temperature superconductors

The amplitude-dependent ac susceptibility of high-temperature superconductors is shown to obey some empirical scaling relations. We try to analyze this behavior by extending a dc nonlinear response function of mixed state to the ac cases. The derived equations for critical current and ac susceptibility ξ(T) agree with the scaling relations of experimental data.     

Synthesis, optical and electroanalytical characterizations of a thiacalix[4](N-phenylazacrown-5)ether-BODIPY ionophore

Novel fluorogenic 1,3-alt thiacalix[4](N-phenylazacrown-5)ether ionophore has been synthesized by conjugation of the N-phenyl group with borondipyrromethene (BODIPY) fluorophore moiety. The ionophore exhibits pronounced off-on type fluorescent responses to some transition metal ions, in particular to Cu²⁺. In a PVC membrane electrode, distinct Ag⁺ selectivity was observed in potentiometric transduction.     

A multidomain integrated‐radial‐basis‐function collocation method for elliptic problems

This article is concerned with the use of integrated radial‐basis‐function networks (IRBFNs) and nonoverlapping domain decompositions (DDs) for numerically solving one‐ and two‐dimensional elliptic problems. A substructuring technique is adopted, where subproblems are discretized by means of one‐dimensional IRBFNs. A distinguishing feature of the present DD technique is that the continuity of the RBF solution across the interfaces is enforced with one order higher than with conventional DD techniques. Several test problems governed by second‐ and fourth‐order differential equations are considered to investigate the accuracy of the proposed technique. © 2008 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2008     

Noise analysis of an electro-optic sensor system

Optical Review - This paper describes the noise analysis of an electro-optic (EO) sensor system based on experimental and simulation results. We developed a polarization simulator of the EO sensor...     

Temperature Dependent In-Plane Anisotropic Magnetoresistance in HfTe_5 Thin Layers

We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe₅ thin layers.The observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature T_p.Below T_p,the anisotropic magnetoresistance is negative with large negative magnetoresistance.When the in-plane magnetic field is perpendicular to the current,the negative longitudinal magnetoresistance reaches its maximum.The negative longitudinal magnetoresistance effect in HfTe₅ thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac semimetals.One potential underlying origin may be attributed to the reduced spin scattering,which arises from the in-plane magnetic field driven coupling between the top and bottom surface states.Our findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe5 in spintronics and quantum sensing.