Complete and Nondestructive Atomic Bell‐State Analysis Assisted by Inverse Engineering

A protocol for complete and nondestructive atomic Bell‐state analysis by using inverse engineering is presented. The setups for the Bell‐state analysis contain four atoms trapped in four separated cavities, respectively. The laser pulses designed by inverse engineering help in the manipulation of the transitions of atoms in a robust manner. By using the protocol, the information for distinguishing four Bell states of two information‐carrying atoms is encoded on two auxiliary atoms. Therefore, the four Bell states can be distinguished without being destroyed by detecting the states of the two auxiliary atoms. Moreover, as shown by the numerical simulations, the protocol has high successful probabilities to distinguish four Bell states when decoherence is considered. Thus, the protocol may provide some helpful perspectives for the quantum information tasks based on Bell states.     

An upgraded external beam PIXE setup for multielemental analysis of atmospheric aerosol samples

The external beam particle‐induced X‐ray emission (PIXE) setup has been upgraded by introducing a new silicon drift detector with the aim of obtaining better minimum detection limits (MDLs) at the 2 × 1.7 MV Tandetron accelerator of the Beijing Normal University in China. The upgraded external beam PIXE setup is equipped with two silicon drift detectors for PIXE analysis of low and high Z elements. A surface barrier detector for Rutherford backscattering spectrometry monitors beam and helium flow. Two kinds of aerosol filter samples (quartz fiber filters and Teflon filters) were studied. A 200‐μm thick Mylar absorber in front of the medium‐high energy X‐rays detector was adopted, and it got the best MDLs for atmospheric aerosol samples analysis. Multielemental analysis of quartz fiber filter aerosol samples was achieved. For more accurate and better MDLs of low Z elements in PIXE analysis, it is necessary to keep sufficient helium flow behind the thin samples.     

Characteristics of cobalt-based alloy coating on tool steel prepared by powder feeding laser cladding

Co-based alloy coating was deposited on tool steel by powder feeding laser cladding. Sections of such coatings were examined to reveal their microstructures and phases using scanning electron microscope (SEM) and X-ray diffractometer (XRD). The results showed that the prime phase (γ-Co dendrite) and other phases, including Cr₂₃C₆, Co₇W₆, and CrNi existed in the coatings. Some different solidification morphologies, such as planar (at the interface), cellular and dendrite formed, varying from the interface to the surface. Fine microstructures of γ-Co dendrite and lamellar eutectic in dendritical regions strengthened the coatings. Besides, the effects of aged treatment on the microstructure and microhardness of the surface coating were studied. Aged treatment led to the precipitations of some carbide particles (Cr₇C₃ and Co₃C) and boride particles (Co₄B) from the cladded coating, causing an increase in microhardness in the laser-cladded coating.     

Enforcing Strong Stability of Explicit Runge-Kutta Methods with Superviscosity

A time discretization method is called strongly stable(or monotone),if the norm of its numerical solution is nonincreasing.Although this property is desirable i...     

Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

The effect of oxygen plasma treatment on the performance of GaN Schottky barrier diodes is studied. The GaN surface is intentionally exposed to oxygen plasma generated in an inductively coupled plasma etching system before Schottky metal deposition. The reverse leakage current of the treated diodes is suppressed in low bias range with enhanced diode ideality factor and series resistance. However, in high bias range the treated diodes exhibit higher reverse leakage current and corresponding lower breakdown voltage. The X-ray photoelectron spectroscopy analysis reveals the growth of a thin GaO_x layer on GaN surface during oxygen plasma treatment. Under sub-bandgap light illumination, the plasma-treated diodes show larger photovoltaic response compared with that of untreated diodes, suggesting that additional defect states at GaN surface are induced by the oxygen plasma treatment.     

Improved fake mode free plane wave expansion method

We analyze the origin of the fake modes introduced by the plane wave expansion method with three-dimension (3D) supercell approximation. Through the detailed analysis of the energy distribution of fake modes and real modes, we propose the plane wave expansion-three planar-slab waveguides method to remove the fake modes and obtain the fake mode free band structure of a two-dimensional air hole photonic crystal slab. To the best of our knowledge, this is the first time that such a fake mode free photonic crystal band structure is presented. Our method is also definitely useful in designing other 3D devices.     

F-P滤波器对啁啾光脉冲脉宽的扩展和压缩

导出了啁啾光脉冲通过F P滤波器后输出脉冲光强的解析表达式。在此基础上 ,对啁啾光脉冲通过F P滤波器后其脉冲宽度的变化进行了研究。结果表明 ,对于一确定的滤波器 ,其对输入脉冲脉宽的影响与输出脉冲的宽度及啁啾因子的大小有关     

Copper as an electron trap in GaAs0.6P0.4

An electron trap having an energy level of 0.14 eV from the conduction band edge was found in the bulk of copper-diffused VPE-grown n-GaAs_0.6P_0.4 by conventional DLTS measurements and by pulse-duration dependent capacitance amplitude measurements. The capture cross section at room temperature is about 1.0×10^–21 cm² and has a weak temperature dependence. These properties are attributed to a non-repulsive center having a capturing mechanism which involves multiphonon emission processes with hardly any lattice relaxation. Evolution of the spatial distributions of the traps with time under junction electric field were studied. The results suggest that the trap is positively charged and has a high diffusivity under electric field. The center can thus be identified as positively charged interstitial copper ion rather than some form of copper complexes.