Ripening of single-layer InGaAs islands on GaAs（001）

The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy(STM) images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.     

Comparative investigation of resistance and ability to trigger high voltage discharge for single and multiple femtosecond filaments in air

A comparative investigation of resistance and ability to trigger high voltage (HV) discharge for single filament (SF) and multiple filaments (MF) has been carried out. The experimental results show that the trend of the breakdown threshold of the SF exactly follows that of its resistance, but this is not the case for the MF. The MF's resistance is much smaller than SF's. However, the MF shows a bit higher HV breakdown threshold than the SF. The underlying physics is that the measured resistance of the MF is collectively contributed by every filament in the MF while the HV breakdown threshold is determined by only one single discharging path.     

Analysis of resistive switching behaviors of vanadium oxide thin film

We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I-V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I-V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.     

少节点基因调控网络的控制

近年来,自组织振荡网络受到越来越多科学家的关注,对生物体的生长、发育起调控作用的基因调控网络即是其中的一种.本文研究了少节点基因调控网络的控制问题.运用多相位超前驱动方法对该种网络进行调控,可以有效地提高对网络的控制效率.通过数值模拟,发现对于少节点基因调控网络,当系统参数确定时,网络的有效控制率可以达到95％以上(10节点网络);当系统参数不确定时,控制的效率也非常高.     

高质量等曲率物参光像面数字全息显微系统

对等曲率物参光像面数字全息显微成像系统进行研究,分析了光路配置方法,推导了系统的点扩散函数,并由此指出了决定系统成像分辨率的因素及系统的成像特点,最后讨论了再现像光场一次位相畸变校正的方法.结果表明,等曲率物参光像面数字全息具有最大的信息容量;该系统的成像分辨率取决于显微物镜的数值孔径和CCD的像元大小,与CCD的光敏面尺寸无关;物体各点中通过显微物镜的所有频率成分均能被系统完全记录与再现,样品被照亮区域的大小对记录条件和再现像质没有影响;等曲率物参光像面数字全息系统是一种优化的全息记录与再现系统,利用该系统可以实现高质量成像.实验结果验证了理论分析的正确性.     

基于X射线的空间语音通信系统

提出了栅控X射线源作为发射器和基于微通道板的X射线单光子探测器作为接收器的X射线通信方案. 搭建了基于X射线的空间语音通信系统, 详细介绍了信号调制发射器、基于微通道板的X射线单光子探测器及信号接收解调器的设计及工作原理. 报道了基于X射线的空间语音通信系统的初步实验结果, 实现了优于20 kbit/s的基于语音信号调制的X射线通信. 实验分析了在不同X射线强度、信号整形时间和阈值设置下通信性能影响, 得出了X射线发射功率限制X射线通信速率的结论, 提出了下一步提高X射线通信性能的改进方案. 关键词： X射线通信 X射线源 探测器     

一种双段多层长周期光纤光栅光谱特性研究

长周期光纤光栅(LPFG)传感器具有非常广泛的应用价值,而有效解决物理量交叉敏感问题是其实用化的关键。基于LPFG对包层外介质折射率和厚度的敏感性,提出一种双段多层折射率横向分布结构的新型LPFG传感器的设计,并利用耦合模理论和传输矩阵方法分析了镀膜材料折射率、膜层厚度和镀层长度对新型LPFG传感器光谱特性的影响。软件仿真结果证明,这种LPFG由于结构设计上的特殊性,将使LPFG的谐振峰发生分裂,即一个透射峰分裂为两个。由于两个分裂峰对应力和温度的灵敏度不同,利用该结构的LPFG作为传感器,可以实现温度、应力等物理量的同步测量,从而解决LPFG传感器的交叉敏感问题。     

聚合物中长程关联能的动力学研究

本文计算采用扩展的SSH哈密顿模型, 加上长程关联哈密顿量,在自然边界条件下,用绝热动力学方法研究了有限长反式聚乙炔链中平均关联能随时间的演化,计算了长程电子关联对极化子动力学的影响并计算了极化子状态下的长程关联能。结果发现,加入一个电子或空穴,平均关联能的大小随着时间呈非周期性阻尼振荡,经过一定时间后,平均关联能趋近一个恒定值,此时得到比较稳定的极化子位形。当格点增加时,长程关联能趋于恒定的时间逐渐缩短。     

Synthesis and luminescent properties of BaGd2O4:Dy3+, an novel scintillating phosphor

The BaGd_2?x O₄:xDy³⁺ (0 ≤ x ≤ 0.08) phosphors were synthesized at 1,300 °C in air by the solid-state reaction route. The as-synthesized phosphors were characterized by X-ray powder diffraction, photoluminescence excitation spectra, photoluminescence (PL) spectra, X-ray excited luminescence (XEL) spectra, and thermoluminescence (TL) spectra. It is found that the quenching concentration of Dy³⁺ ions in BaGd₂O₄ host is dependent on the selected excitation wavelength. The optimal PL intensity for the investigated BaGd_2?x O₄:xDy³⁺ phosphors is found to be x = 0.01, 0.02, and 0.04, upon excitation by 234, 277, and 350 nm ultraviolet light, respectively. The energy transfer among Dy³⁺ ions upon excitation by 350 nm is confirmed to be an electric dipole–dipole interaction mechanism based on the fitting of Huang’s rule. In addition, the intensive XEL from BaGd₂O₄:Dy³⁺ phosphor is observed by the naked eyes at room temperature, and TL properties of the investigated phosphors are analyzed and discussed. All the results imply that the investigated phosphors could be a promising scintillating phosphor.     

能动磨盘变形检测中的各误差因素分析

针对现有f530 mm能动磨盘的检测系统（有效检测口径f420 mm）,系统分析了检测过程中的球头误差、传感器安装角度误差和坐标定位误差,并给出了各项误差对检测精度的影响。同时,还针对检测基座不完全水平的问题建立模型,应用最小二乘法实现了检测数据的去倾斜处理。给出了实测数据去倾斜前后和误差补偿前后的检测精度对比情况,结果表明去倾斜算法能较好地还原实测数据,补偿检测中的系统误差有助于提高检测精度。