Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement

The strain impact on hole mobility in the GOI tri-gate pFETs is investigated by simulating the strained Ge with quantum confinement from band structure to electro-static distribution as well as the effective mobility. Lattice mismatch strain induced by HfO2 warps and reshapes the valence subbands, and reduces the hole effective masses. The maximum value of hole density is observed near the top comers of the channel. The hole density is decreased by the lattice mismatch strain. The phonon scattering rate is degraded by strain, which results in higher hole mobility.     

自旋为1的三粒子Heisenberg XXX链中杂质对热纠缠的影响

采用纠缠的度量方法Negativity研究了匀强磁场下自旋为l的含杂质三粒子HeisellhergXXX链的热纠缠特性.通过计算系统的杂质位与其余部分间的两体纠缠N1-23及正常位与其余部分间的两体纠缠N12-3,发现纠缠存在的临界温度T.的改变来自杂质参数J1的变化,随杂质参数J1,的增加而增加,外界磁场B的存在会降低纠缠值,但并不会改变临界温度.可以通过调节杂质参数J1和外界磁场B来控制两体纠缠N1-23,和N12-3的大小.     

具有Manning-Rosen标量势与矢量势的Klein-Gordon方程的任意l波束缚态近似解析解

在球坐标系中研究了具有离心项的Manning-Rosen型标量势与矢量势的Klein-Gordon方程.在标量势等于矢量势的条件下,运用合适的指数近似将具有离心项的径向Klein-Gordon方程转化成超几何微分方程,从而获得了系统的任意l波Klein-Gordon方程解析束缚态径向波函数.最后,对l=0和α=0或1两种特殊情况进行了简单讨论.     

Power dependence of Brillouin linewidths in a silica fiber

We report the dependence of Brillouin linewidths on the pump power below the threshold of Brillouin lasing in a silica fiber. The Stokes Brillouin shift in a silica fiber is nearly unchanged, and its linewidth decreases with increasing pump power. However, the anti-Stokes Brillouin shift becomes smaller and its linewidth larger with increasing pump power. We explain these experimental results by the distributed fluctuating source model.     

紫花地丁中汞的原子荧光法测定

利用还原气化的非色散型装置，以湿法消解的方式，建立了原子荧光测定紫花地丁中痕量汞的测定方法，同时比较了不同玻璃仪器的洗涤方法和不同的定量方法，试验回收率在86．9％－110．8％之间，误差＜8．5％，通过对实际样品的测定，得到了满意的结果。     

The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Hydrogenated amorphous and microcrystalline silicon films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at low substrate temperatures using H₂-diluted SiH₄ as a source gas. High-density plasma generated by inductively coupled excitation facilitates the crystallization of silicon films at low temperatures, and microcrystalline silicon films were obtained at the substrate temperature as low as 180 °C. The columnar structure of the films becomes more and more compact with an increase of their crystallinity. The reduction of hydrogen content in the films causes a narrowing of the optical bandgap and an enhancement of the absorption with increasing the substrate temperature. The microcrystalline silicon films show two electronic transport mechanisms: one is related to the density of state distribution in the temperature region near room temperature and the other is the variable range hopping between localized electronic states close to the Fermi level below 170 K. A reasonable explanation is presented for the dependence of the optoelectronic properties on the microstructure of the silicon films. The films prepared at a substrate temperature of 300 °C have highly crystalline and compact columnar structure, high optical absorption coefficient and electrical conductivity, and a low hydrogen content of 3.8%.     

统计平衡状态下扭秤热噪声对引力实验的限制

讨论了统计平衡状态下的耗散涨落理论,由此推导出扭秤的热噪声对引力实验的限制.     

SU-8光栅结构中的液晶激光特性

设计制作了SU-8光栅结构的染料掺杂手性向列相液晶激光器件,在器件正面和侧面均实现了随机激光辐射。将激光染料PM597、手性剂S-811、向列性液晶TEB30A按一定比例均匀混合,注入反平行摩擦处理的液晶盒中,器件的下基板通过光掩模法刻蚀出周期为15μm的光栅。利用532 nm的Nd∶YAG固体脉冲激光器作为泵浦源,器件的侧面既在580～590 nm范围内出现了多个离散分立的随机激光辐射峰,FWHM约0.19 nm,又在579～585 nm范围内出现独立的两个激光辐射峰,FWHM约0.19 nm;在器件正面获得了584～590 nm范围的随机激光辐射谱,FWHM约0.17 nm。加热器件至61℃,液晶相变为各向同性态,器件侧面仍出现了波长约590.60 nm、FWHM约0.24 nm的激光辐射峰。分析得出,液晶盒中引入SU-8光栅结构后,光子同时在液晶分子间多重散射和SU-8光栅中布拉格反射获得反馈放大,两种机制相辅相成。器件侧面出现的独立激光辐射峰主要由SU-8光栅布拉格反射提供反馈放大形成,而器件侧面和正面的随机激光辐射峰主要由液晶分子间多重散射提供反馈放大形成。     

四-(二甲氨基苯基)卟啉及其金属配合物的合成及光谱性能研究

以丙酸、乙酸、硝基苯为溶剂一步法合成了四-(二甲氨基苯基)卟啉(T(DMAP)P),并采用氯仿-N,N二甲基甲酰胺为溶剂合成了其与Zn2+,Mn2+,Tb3+三种离子的配合物,考察了溶剂种类、温度、时间对反应的影响,探讨了卟啉与金属盐反应两者用量的最佳比例,在较温和条件下合成了卟啉金属配合物,避免了高温合成金属卟啉不稳定现象。利用元素分析,IR,UV-Vis等方法确定了目标化合物的组成和结构。考察了不同浓度及温度下卟啉配合物的电导率并计算了其摩尔电导率。实验结果发现,卟啉与铽离子配合物摩尔电导率远大于锌、锰配合物。实验研究了不同金属离子对反应的影响,重点考察了卟啉及其金属配合物的分子光谱性能的差异。与四苯基卟啉相比,T(DMAP)P及其金属配合物UV-Vis光谱均发生红移,探讨了该现象产生的原因。     

High-power and high-temperature THz quantum-cascade lasers based on lens-coupled metal-metal waveguides

A metal-metal waveguide quantum cascade laser with an abutted silicon hyperhemispherical lens is demonstrated at ~4.1 THz. The device produced 145 mW of peak pulsed power at 5 K with a wall-plug power efficiency of 0.7%, lasing up to a maximum operating temperature of 160 K. The far-field beam pattern has a full width at half-maximum value of ~4.8 degrees in the H plane. The same device produced ~26 mW of peak power using a Winston cone instead of a lens, lasing up to 165 K. The large increase in output power is mainly attributed to an increase in collection efficiency.