Fe/Si多层膜的层间耦合与界面扩散

对以本征Si及重掺杂ｐ型和ｎ型Si作为中间层的Fe/Si多层膜的层间耦合进行研究，并通过退火，增大Fe，Si之间的扩散，分析界面扩散对层间耦合的影响. 实验结果表明，层状结构良好的制备态的多层膜，Fe，Si之间也存在一定程度的扩散，它是影响层间耦合的 主要因素，远远超过了半导体意义上的重掺杂，使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现，在一定范围内增大Fe，Si之间的扩散，即使多层膜的层状结构已经有了相当的退化，Fe/Si多层膜的反铁磁耦合强度基本保持不变. 关键词： Fe/Si多层膜 层间耦合 界面扩散     

Hawking Radiation of Dirac Particles in a Nonuniformly Rectilinearly Accelerating Black Hole

The Hawking radiation of Dirac particles on the event horizon of a nonuniformly rectilinearly accelerating black hole is studied in this paper. First, we construct the symmetrized null tetrad from which the spin coefficients and Dirac equation are derived. Next, by proposing generalized tortoise coordinate transformation, the decoupling problem of the Dirac equation with nonzero rest mass is solved. Finally, by analytic continuation, the Hawking thermal spectrum formula of Dirac particle for nonuniformly rectilinearly accelerating black hole is obtained.     

基于悬臂梁调谐技术的光纤光栅无源振动监测

采用匹配光纤光栅设计了一种结构简单的振动信号无源监测装置.该装置利用悬臂梁调谐技术能够将微小振动信号转化为光电探测器可探测的光强信号,利用示波器实现实时监测.实验中对振幅为3mm的简谐振动信号进行了监测,测量结果与振动频率一致,可测量7～20Hz的振动,信噪比不低于14.9dB.监测频率受限是因为悬臂梁的性质,如采用金属材料或者采用齿轮组对转子进行减速,该装置可探测更高的频率.     

互补型自适应滤波器在心磁信号处理中的应用

将心磁信号从干扰噪声中加以提取并有效地消除噪声干扰是心磁信号处理中尤为重要的环节 .从改进算法的角度出发，提出互补型自适应滤波器结构以实现心磁信号的消噪处理.该滤波器针对心磁这类非平稳信号进行设计，有效地解决了常规自适应滤波器应用于心磁信号处理时收敛速度和稳态误差的矛盾.通过仿真实验和心磁实验结果表明，该算法能有效地消除心磁信号的背景噪声和工频干扰噪声.同时该算法也可用于其他非平稳信号的消噪处理. 关键词： 自适应滤波 心磁图 最小均方误差     

Surface free energies of electroless Ni–P based composite coatings

Surface free energy of a solid surface gives a direct measure of intermolecular interactions at interfaces and has a strong influence on adsorption and adhesion behaviour. However few data are available for the surface free energies of electroless Ni–P based composition coatings. In this paper, the electroless Ni–P, Ni–P-surfactant, Ni–Cu–P, Ni–P–PTFE and Ni–Cu–P–PTFE composite coatings were prepared under various coating conditions. The chemical compositions, surface morphology and thickness of the coatings were measured using an energy dispersive X-ray microanalysis (EDX), a scanning electron microscope (SEM) and a digital micrometer respectively. The contact angles of water, diiodomethane and ethylene glycol on the coatings were measured automatically using dataphysics OCA-20 contact angle analyser. The surface free energy of the coatings and their components (e.g. dispersion, polar or acid/base portions) were calculated using various methods. The experimental results showed that the incorporation of surfactant or PTFE particles into Ni–P matrixes has a significant influence on the surface free energy of the coatings, while the incorporation of copper into Ni–P matrixes has no significant influence on the surface free energy of the coatings.     

The Synthesis of Glycoglycerolipids

A convenient synthetic route was developed for the synthesis of the novel glycolipids: 1,2-di-O-acyl-3-O-(2‘-acylamide-2‘-denxy-ct-D-glucopyranosyl)-sn-glycerols. 10 new compounds of glycolipids with different acyl groups were obtained.     

Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime

Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (V_InH₄)⁺ to (V_InH₄)⁰. This phenomenon was more obvious in P-rich samples that have a higher concentration of V_InH₄. The transformation temperature of approximately 120 K suggests that the complex V_InH₄ is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral V_InH₄ accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP.     

凸度量空间中单值和集值映象的公共不动点定理

§ 1.　Introduction　　Anecessaryandsufficientconditionandasufficientconditiontoensurethataset valuedmappingandasingle valuedmappinginacompletemetricspaceandacompleteconvexmetricspacehavingacommonfixedpointarerespectivelygivenin [1 ] .Meanwhilethemainresultsin[2 ]— [5]areimprovedandextendedin [1 ] .Inthispaper ,theexistenceatcommonfixedpointsoftwoset valuedmappingandasing valuedmappingwerestudied ,andthecorrespond ingresultsin [1 ]— [5]wereextendedandimproved .Let(X ,d)beanon emptymetricspa…     

甚高频等离子体增强化学气相沉积法沉积μc-Si∶H薄膜中氧污染的初步研究

对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μc_Si∶H）薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明：μc_Si∶H薄膜中,氧以Si—O，O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示：沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响；而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅（a_Si:H）薄膜. 关键词： 氢化微晶硅薄膜 甚高频等离子体增强化学气相沉积 氧污染