Vibrational Dynamics Studies by Nuclear Resonant Inelastic X-Ray Scattering

Nuclear resonant inelastic X-ray scattering of synchrotron radiation is being applied to ever widening areas ranging from geophysics to biophysics and materials science. Since its first demonstration in 1995 using the ⁵⁷Fe resonance, the technique has now been applied to materials containing ⁸³Kr, ¹⁵¹Eu, ¹¹⁹Sn, and ¹⁶¹Dy isotopes. The energy resolution has been reduced to under a millielectronvolt. This, in turn, has enabled new types of measurements like Debye velocity of sound, as well as the study of origins of non-Debye behavior in presence of other low-energy excitations. The effect of atomic disorder on phonon density of states has been studied in detail. The flux increase due to the improved X-ray sources, crystal monochromators, and time-resolved detectors has been exploited for reducing sample sizes to nano-gram levels, or using samples with dilute resonant nuclei like myoglobin, or even monolayers. Incorporation of micro-focusing optics to the existing experimental setup enables experiments under high pressure using diamond-anvil cells. In this article, we will review these developments. This revised version was published online in August 2006 with corrections to the Cover Date.     

Tokamak中自举电流的剖面准直性

利用Harris模型,通过求解等离子体平衡方程,计算俘获粒子份额,分别对常规剪切和中心负剪切下tokamak中的自举电流的大小和剖面准直性进行了计算和分析.自举电流分布与等离子体平衡电流分布之间的剖面准直性可以通过调整等离子体的密度、温度和电流分布参数,以及描述等离子体形状的拉长度k和三角变形因子d来获得.中心负剪切位形有利于自举电流产生,并有好的剖面准直性.通过计算比较,分别在常规剪切位形下和中心负剪切位形下获得了一组优化的等离子体参数,在这组参数下,自举电流有较大的份额和好的剖面准直性 关键词： tokamak 自举电流 剖面准直性     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

Cardy-Verlinde Formula and Thermodynamics of Black Hole in Higher Dimensional Space-Time

In this paper we discuss thermodynamics parameters of black hole horizon and cosmological horizon in general high-dimensional space-time. We obtain that the entropy of a cosmological horizon can be described by the Cardy-Verlinde formula. However, the entropy of black hole horizon will be expressed in a form of the Cardy-Verlinde formula, if one adopts the methods given by Abbott and Deser to compute the mass of a black hole in general high-dimensional space-time. Through discussion, relation among various thermodynamics parameters of the black hole in general high-dimensional space-time is given. That is, differential formula of the first law of thermodynamics is obtained. Because we discuss the general high-dimensional space-time, our result has universality. PACS: 04.20.Dw, 97.60.Lf     

非保守力学系统Nielsen方程的形式不变性

研究非保守力学系统Nielsen方程的形式不变性.给出非保守力学系统Nielsen方程的形式不变性的定义和判据,研究形式不变性和Noether对称性的关系,并举例说明结果的应用 关键词： 非保守力学系统 Nielsen方程 形式不变性 Noether对称性     

吸积盘的X射线辐射对周围星际物质的离化研究

利用辐射流体力学程序对三倍频纳秒激光与靶物质相互作用进行了模拟研究，得到了可以产生黑体辐射谱分布的激光等离子体X射线辐射靶的最佳厚度；数值模拟研究了黑体谱分布的X射线辐射场对等离子体系统平均离化度分布的影响，它有助于深入理解天体物理中吸积盘对它周围星际物质的离化影响. 关键词： 辐射流体力学 激光等离子体 X射线辐射 吸积盘 离化     

Comparison of the boundary theory with the contact rule of phase regions and Gupta’s method

The phase boundary theory and the contact rule of phase regions are compared, and some weaknesses of the latter are manifested. The comparison between the Gupta’s method and the boundary theory method for constructing multicomponent isobaric sections is also presented.     

A Characterization of Graphs without Even Factors

In this paper, we first reduce the problem of finding a minimum parity (g,f)-factor of a graph G into the problem of finding a minimum perfect matching in a weighted simple graph G*. Using the structure of G*, a necessary and sufficient condition for the existence of an even factor is derived. This paper was accomplished while the second author was visiting the Center for Combinatorics, Nankai University. The research is supported by NSFC     

Laser-induced site-selective silver seeding on polyimide for electroless copper plating

Ag particles were generated on Ag⁺-doped polyimide film by laser direct writing, followed by selective copper deposition using the metallic silver particles as seeds. Laser irradiation caused in situ reduction and agglomeration of silver on the polyimide film. The copper lines were less uniform and compact with higher scanning velocity and the width of the deposited copper line could reach 25 μm. Equations of the relationship between scanning velocity and connectivity of the deposited copper patterns have been derived. The process was characterised by AFM, XPS, SEM, and semiconductor characterisation system.     

Characteristics of Nd：GdVO4 Laser with Different Nd-Doping Concentrations

We report the properties of a compact diode-pumped continuous-wave Nd：GdV04 laser with a linear cavity and different Nd-doped laser crystals. In a 0.2at.% Nd-doped Nd：GdVO4 laser, 1.54 W output laser power is achieved at 912nm wavelength with a slope efficiency of 24.8% at an absorbed pump power of 9.4W. With 0.3at.% Nd-doping concentration, we can obtain the either single-wavelength emission at 1064nm or 912nm or the dual-wavelength emission at 1064nm and 912nm by controlling the incident pump power. From an incident pump power of 11.6 W, the 1064nm emission between ^4Fa/2 and ^4I11/2 is suppressed completely by the 912nm emission between ^4Fa/2 and ^4I9/2. We obtain 670 mW output of the 912nm single-wavelength laser emission with a slope efficiency of 5.5% by taking an incident pump power of 18.4 W. Using a Nd：GdV04 laser with 0.4at.% Nd-doping concentration, we obtain either the single-wavelength emission at 1064nm or the dual-wavelength emission at both 1064nm and 912nm by increasing the incident pump power. We observe a strong competition process in the dualavelength laser.