电沉积－退火工艺制备铜铟硒太阳能电池薄膜及表征

利用电沉积硒气氛下后续退火的工艺制备出了高结晶质量的铜铟硒薄膜．通过X射线衍射、扫描电子显微镜、拉曼光谱、紫外-可见-近红外光谱和阻抗谱技术对退火后的铜铟硒薄膜进行表征,结果表明530 oC硒化退火后的铜铟硒薄膜具有四方的黄铜矿晶体结构,晶粒尺寸达到微米量级,光学带隙为0.98 eV,经过KCN溶液去除表面高导电性的铜硒化合物后铜铟硒薄膜的载流子浓度在10¹⁶ cm^-3量级．利用硒化退火的铜铟硒薄膜作为光吸收层制备了结构为AZO/i-ZnO/CdS/CIS/Mo/glass的太阳能电池,在AM1.5光照条件下对其电流-电压特性测试后发现面积为0.2 cm²的电池可以达到0.96％的能量转换效率,并对限制电池效率的原因做出了初步的分析和讨论.     

Temperature-calibrated fiber-optic refractometer based on acompact FBG-SMS structure

A novel all-fiber temperature-calibrated refractometer based on a compact fiber Bragg grating(FBG) single-multi-single(SMS)structure is proposed and experimentally demonstrated.The sensor head is composed of a FBG combined with a SMS structure,in which the middle multimode fiber(MMF)section is etched by a time-controlled hydrofluoric.The transmission dip of SMS is extremely sensitive to ambient refractive index(RI)variation,whereas the upstream FBG provides the necessary temperature information for RI calibration.All aforementioned functions are performed via a compact FBG-SMS structure not longer than 25 mm.The proposed sensing device provides a linear RI sensitivity over water or waterbased solutions(RI values near 1.33 at optical wavelengths for most biological and many environmental applications),and has temperature-calibration capability.Hence,the said refractometer is a good candidate for sensing in chemical and biological applications.     

基于LCVR调谐的全偏振多谱段成像系统

提出一种新型全偏振多谱段成像系统,将液晶相位可变延迟器LCVR应用于全偏振成像技术,在可见-近红外波段上可快速实现光的全偏振态的精确调制.系统由光学镜头、LCVR、偏振片、滤波片和CCD探测器组成.文章首先介绍了系统结构、工作原理和光学设计,并提出了适合本系统的偏振定标方法,建立了偏振定标系统,实现了利用较小面积的偏振...     

He-Ne激光诱变的香菇变异株遗传稳定性分析

对三株香菇菌种采用He-Ne激光(λ=6328nm)进行两次照射,筛选出三株比出发菌株菌丝生长速率分别提高173%、737%和426%的变异株,经传代培养及酯酶同工酶谱分析,变异株具有良好的遗传稳定性表明激光作为微生物新型诱变因子与传统化因子相比,具有正变率高、回复突变率低、遗传稳定性好的特点.     

Performance of La2O3/InAlN/GaN metal—oxide—semiconductor high electron mobility transistors

We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse.     

Scaling Behavior between Heat Capacity and Thermal Expansion in Solids

We experimentally analyze the heat capacity and thermal expansion of reference solids in a wide temperature range from several Kelvin to melting temperature,and establish a universal double-linear relation between the experimental heat capacity C_p and thermal expansion β,which is different from the previous models.The universal behavior between heat capacity and thermal expansion is important to predict the thermodynamic parameters at constant pressure,and is helpful for understanding the nature of thermal properties in solids.     

级联二阶非线性铌酸锂全光开关的研制

以基于准位相匹配和频与差频级联二阶非线性[X^(2)：X^(2)]基础上的全光开关的理论分析作指导,进行了周期极化铌酸锂晶体(PPLN)和退火质子交换光波导(APE)的实验制备,利用所研制的PPLN-APE器件,以自行研制的工作波长为1．54μm的被动调Q掺钴铝酸镁激光器作为控制光源,以工作波长为1．5μm的连续二极管激光器为信号光源进行了级联二阶非线性全光开关实验。当控制光峰值功率为3kw,信号光功率为1mW时,实现13％的开关效率,分析了进一步提高全光开关性能的途径。     

Micro-Gal laser absolute gravimeter based on high precision heterodyne interferometer

A micro-Gal absolute gravimeter based on high-precision and high-stability heterodyne interferometer is presented. The distance measuring technology of the gravimeter is studied in detail. The experimental results of distance measuring for a free-falling motion show that the high-precision heterodyne interferometer described in this paper can meet the demand of a micro-Gal absolute gravimeter with relative uncertainty of 6.4 × 10-9. Moreover, the heterodyne interferometer is more stable than the Mach-Zehnder interferometer (MZI) which is widely used in present absolute gravimeters.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

光诱导准一维光子晶格中离散空间光孤子的相互作用

基于分步束传播法数值分析了离散空间光孤子在准一维光诱 导光子晶格中的相干与非相干相互作用过程. 结果表明: 对于相干孤子, 同相时相互吸引, 反相时相互排斥. 然而, 由于非线性响应的各向异性, 横向排布的非相干孤子会因间隔波导数目的增加而由相互吸引变为相互排斥. 并且, 沿对角方向排布的两个非相干孤子在孤子相 互作用力和布拉格反射的共同影响下, 会呈现出"钟摆式"振荡传输现象. 研究结果有助于进一步理解非线性各向异性对离散孤子相互作用的影响机制, 并为后续实验研究提供理论参考.