On the tribological characteristics of dynamically loaded journal bearing with micropolar fluids

The addition of the additives to the lubricant oil to enhance the characteristics of the lubricant will influence the performance of the bearings. Based on the theory of micropolar fluids, the tribological characteristics of a dynamically-loaded journal bearing are numerically studied. Comparisons are made between the Newtonian fluids and the micropolar fluids. It is shown that for a dynamically-loaded journal bearing, the micropolar fluids yield an increase not only in the friction force, but also in the friction coefficient. In addition, the oil film pressure and the oil film thickness are obviously higher than that of Newtonian fluids.     

无界区域R1上推广的B-BBM方程的整体吸引子

本文研究了无界区域R^1上推广的B—BBM方程的长时间动力学行为，证明了该方程整体吸引子的存在性．     

淋洗液发生器离子色谱抑制电导法测定甜味剂

采用淋洗液发生器阴离子交换-抑制电导检测法,同时分离和检测阿思巴甜、甜蜜素、安赛蜜和糖精4种常见的甜味剂.由于采用了淋洗液发生器,使背景电导大大降低,可以实现甜味剂的高灵敏度检测和分离.该方法具有良好的重现性、线性关系和较低的检测限.阿思巴甜、甜蜜素、安赛蜜和糖精的检测限分别是:1.27、0.045、0.033、0.063 mg/L;样品测定的回收率分别为99.7%、102.8%、98.6%、103.5%.     

Effect of Ultrashort Pulsed Laser and X-Ray Irradiation on Au+ -Doped Glass

Au nanoparticles were precipitated inside Au+-doped glass samples after irradiation by femtosecond laser or x-ray. Femtosecond laser and X-ray irradiation result in decreasing of anneal temperature and critical size for the precipitation of Au nanoparticles.     

Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method

We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.     

量子混合态的统计角

本文把关于量子纯态之间的统计角概念推广到量子混合态,并提出了单个混合态的发散角这一概念,导出了纯态判据,用到测量上,响应函数不过是量子系统与仪器之间的统计角余弦的平方,而测量过程中的熵增加则显现为混合态发散角的扩大。 关键词：     

Ferromagnetic Properties of Bond-Dilution and Random Positive or Negative Uniaxial Anisotropy Blume-Capel Model

We study the ferromagnetic properties of spin-1 system, which is considered in the frame of the bond dilution and random positive or negative anisotropy Blume-Capel model in the effective field theory and a cutting approximation. The investigation of phase diagrams displays some rich properties of the trajectory of tricritical point, reentrant henomena at low temperatures. Under certain both bond concentrations and random negative anisotropy, there are new transition lines of double tricritical points. So special emphasis is placed on the influence of the bond dilution and random anisotropy on phase diagrams. The magnetizations of the system are also discussed. Some results have not been evealed in previous reports.     

Solving Generalized Non-degenerate Two-Mode Two-Photon Jaynes-Cummings Model by Supersymmetric Unitary Transformation

Based on supersymmetric quantum mechanics theory, we introduced a supersymmetric unitary transfor mation to diagonalize the Hamiltonian of non-degenerate two-mode two-photon Jaynes-Cummings models which include any forms of intensity-dependent coupling, field-dependent detuning, and field nonlinearity. Its eigenvalue, eigenstates,and time evolution of state vector are obtained.     

体心立方金属中空位迁移规律

本文在考虑空位浓度对空位迁移能的影响和双空位效应的情况下,给出了体心立方金属中空位流与空位浓度梯度之间的定量关系。并指出当空位浓度超过一个临界值时,空位将向其浓度大的地方迁移。本文所用方法也可用于其它金属。 关键词：     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.