Sturm-Liouville问题的m-函数与谱

本文先给出了Sturm-Liouville问题的Weyl-Titchmarsh m-函数对谱参数和端点的导数,进而推出其对于谱参数的分段单调性;然后利用m-函数定义了Sturm-Liouville问题的广义特征多项式,并由此得到Sturm-Liouville问题的谱对边界和参数的导数的一个简短证明.     

R~n上具有三个主曲率的Laguerre等参超曲面

R~n上主曲率非零的定向无脐超曲面x:M→R~n称为Laguerre等参超曲面,如果它的Laguerre形式C=∑_iC_iω_i=∑_iρ~(-1)(E_i(logρ)(r-r_i)-E_i(r))ω_i为零,Laguerre形状算子S=ρ~(-1)(S-rid)的特征值为常数,这里ρ~2=∑_i(r-r_i)~2,r=r=((r_1)+r_2+…+r_(n-1))/(n-1)是平均曲率半径,S是x的形状算子,{E_i}是Laguerre度量g的单位正交标架,{ω_i}是对偶标架.本文给出R~n上具有三个互异Laguerre主曲率的Laguerre等参超曲面的分类.     

量子点银增强可视化检测方法的研究与应用

通过制备链霉亲和素修饰的CdTe量子点探针,建立了基于量子点探针的银增强显色可视化检测方法,并结合蛋白质芯片分析技术,将此方法应用于反相蛋白芯片的分析检测.以人IgG测定为模式,在醛基片上固定人IgG,加入10 ng Bio-羊抗人IgG及CdTe-SA探针,银增强显色15 min.结果显示,人IgG样品量在100 pg～1.6 ng范围内,其对数值与信号灰度值呈良好的线性关系(r=0.997),检出限为50 pg.本方法可实现微量蛋白的灵敏检测,具有操作简单,对仪器要求低,结果可视化等特点.     

聚二甲基硅氧烷芯片自由酶反应器检测葡萄糖

应用电泳中介微分析(EMMA)技术,构建聚二甲基硅氧烷(PDMS)芯片自由酶反应器, 在线检测葡萄糖(Glu),在十字形的芯片通道上,采用自制的碳纤维微电极检测葡萄糖氧化酶(GOD)催化氧化Glu生成的H2O2,并对检测电位、GOD浓度、GOD进样时间、分离电压等参数进行了优化,测定了该自由酶反应器的线性范围和检出限,考察了其重现性及稳定性.结果表明,此自由酶反应器制作方便,操作简单,重现性好,Glu浓度在0.1～20 mmol/L之间有较好的线性关系(r=0.997),检出限为19.8 μmol/L(S/N=3).     

氟掺杂纳米 TiO2 薄膜的低温制备及其光催化性能

 以氟化铵为氟源, 采用水热法制得氟掺杂 TiO2 (FTO) 溶胶, 并通过浸渍提拉法在低温下制备了 FTO 薄膜. 其中在 120 oC 下水热处理 10 h 所得的 TiO2 溶胶制备的薄膜均匀透明, 具有较高的光催化活性. 氟掺杂后的 TiO2 晶粒尺寸并未发生明显变化, 但薄膜的光催化活性显著升高. F/Ti 摩尔比为 0.01 时, FTO 薄膜的光催化活性最高, 比 TiO2 薄膜的活性升高了 23%. X 射线光电子能谱结果表明, 氟掺杂 TiO2 中的氟离子存在晶格取代掺杂和表面化学吸附两种形式. 这两种氟离子的共同作用是 FTO 薄膜光催化活性升高的主要原因.     

介孔纳米 MoPO-AlPO4 的制备及其对异丁烯选择氧化的催化性能

 分别采用溶胶-凝胶法和等体积浸渍法制备了 MoPO-AlPO4 催化剂, 考察了钼物种存在状态对催化剂晶格氧活性以及异丁烯选择氧化反应性能的影响. N2 吸附-脱附、X 射线衍射、高分辨透射电镜、X 射线光电子能谱、傅里叶变换红外光谱、程序升温还原和微反实验结果表明, 与浸渍法制备的催化剂相比, 溶胶-凝胶法制备的 MoPO-AlPO4 催化剂为介孔纳米材料, 其比表面积和孔数量均有较大程度的提高. 在浸渍法制备的催化剂中, 钼物种以四面体 MoO42− 和八表面体 MoO66− 形式存在; 而在溶胶-凝胶法制备的催化剂中钼物种主要以四面体 MoO42− 的形式存在, 并有部分钼物种嵌入到了 AlPO4 骨架中. 钼物种的种类对异丁烯选择氧化反应的活性和选择性有较大影响, 溶胶-凝胶法制备的催化剂由于嵌入 AlPO4 骨架中钼物种的存在, 异丁烯选择氧化反应性能得到较大提高.     

基于不锈钢模板热压微模塑构建聚乙烯超疏水表面

采用含FeCl3的蚀刻液对不锈钢表面进行刻蚀,再以此蚀刻面为模板热压低密度聚乙烯(LDPE),冷却剥离得到LDPE微模塑表面。研究结果表明:静、动态接触角均超过150°,滚动角约5°,LDPE表面呈"花菜状"结构,即大"包"上密集分布着微米及亚微米级的小突起。本工艺可望结合工业上生产塑料薄膜的流延技术,实现聚合物超疏水表面的规模化生产。     

Clustering Structure of 10Be Studied with the Deformed RMF＋BCS Method

We investigate the nucleus 10Be using the deformed relativistic mean field （RMF） model and BCS theory. The calculated density distribution suggests two α clusters in the nucleus 10Be. According to BCS theory, the two valence neutrons transit to the first excited state 02＋ in a pair and form a 2-n cluster. By comparing the two neutron separation energy （S2n） with the single neutron separation energy （Sn）, and analyzing the difference between the neutron and proton rms radii （Rn-Rp） calculated by the deformed RMF, we suggest that 10Be is the best candidate for a two-neutron skin. The two-neutron skin clings to the 2α clusters closely and makes the two α clusters have cross and chain distribution.     

Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100℃ in N2 and in 02 ambient become n-type and p-type, respectiveIy. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumineseence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100℃ in N2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100℃ in O2 ambient, the oxygen antisite contributes ZnO films to p-type.     

Optimization of Experimental Discharge Parameters to Increase the Arc Efficiency of the Bucket Ion Source

Arc efficiency is a critical criterion for assessing the performance of the ion source. High are efficiency is necessary for a high power ion source, because it can decrease the load of the arc power supply. Thus the relationship between the discharge parameters （gas pressure, arc voltage, filament current, bias resistance connecting between the anode and plasma grid） and the arc efficiency is investigated in experiment especially. It is found that with increasing pressure, the arc efficiency increases fast if the pressure is below 0.4 Pa, but when it is above 0.4 Pa, the arc efficiency remains unchanged or increases slowly. If we increase the arc voltage or filament current, the arc efficiency decreases. The bias resistance also influences the arc efficiency, at the same pressure the arc efficiency increases with resistance.