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81.
O. B. Tagiev S. A. Abushov F. A. Kazymova K. O. Tagiev 《Journal of Applied Spectroscopy》2006,73(4):541-545
We present the results of a study of the luminescence and luminescence excitation spectra, and also the luminescence kinetics
of a BaSiO3:Yb3+ crystal. We have established the mechanism for emission by the matrix and energy transfer from the matrix to the rare earth
ion.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 4, pp. 478–482, July–August, 2006. 相似文献
82.
R. K. Tagiev 《Differential Equations》2009,45(10):1526-1535
We consider an optimal coefficient control problem for a linear parabolic equation. For this problem, we study well-posedness
issues and obtain necessary optimality conditions. 相似文献
83.
The frequency and temperature dependences of the ac capacitance and resistivity of FeIn2S4 semiconductors are studied. Resonances are observed at certain temperatures in the frequency range (2.5–5.0) × 105 Hz. The permittivity of the crystals and the activation energy of charge carriers are determined. It is found that electrical
conduction in the given temperature interval is governed by an activation mechanism. The activation energy is frequency-dependent,
because the relaxation time of barrier layers decreases with rising frequency. 相似文献
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The results of investigation of relaxation processes in highly resistive M-GaS〈Yb〉-M systems at different temperatures are reported. It was shown that falling relaxation of dark current in these systems is accompanied by charge accumulation in deep trapping levels of Et=0.63eV with concentration of Nt=6×1013 cm-3. 相似文献
88.
This paper presents some results of studying the Poole–Frenkel effect with allowance for shielding in layered GaSe and GaTe single crystals and their solid solutions in strong electrical fields of up to 105 V/cm at temperatures of 103–250 K. According to the relationship \(\left(\frac{\sigma}{\sigma(0)}\right)^{1/2}\) log\(\frac{\sigma}{\sigma(0)} = E\sqrt{\frac{\varepsilon}{4\pi n(0)kT}}\), there exists a linear dependence between \(\left(\frac{\sigma}{\sigma(0)}\right)^{1/2}\) log\(\frac{\sigma}{\sigma(0)}\) and the electrical field E (σ is the electrical conductivity in strong electrical fields, and σ(0) is the electrical conductivity in the ohmic region). The slopes of these lines have been determined at different temperatures (103–250 K) by estimating the concentration of current carriers n(0) = 3 × 1013–5 × 1015 cm–3 in the ohmic region of the electrical conductivity of solid solutions of layered GaSe x Te1–x single crystals (x = 1.00, 0.95, 0.90, 0.80, 0.70, 0.30, 0.20, 0.10, 0). 相似文献
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