Photoelectric properties of GaSexTe1−x : Sn single crystals

The paper deals with the results of investigations of the photoelectric properties of GaSe_xTe_1?x : Sn single crystals in a strong electric field.The maximum influence of light on the current-voltage characteristics is observed to beat wavelength between 400 and 800 nm.The sensitivity of the phototrigger effect is about 10⁷$\text{Vcm}{}^2\text{W}$ in these crystals.     

Exciton mechanism of the formation of an N-section on the volt-ampere characteristic of GaSe 〈Cu〉

The photoelectric properties of gallium selenide doped with copper are investigated. An N section is observed on the volt-ampere characteristic (VAC) of samples illuminated by a laser beam at a wavelength of 0.63 m. The influence of white and monochromatic light and the contact material on the VAC is considered over a broad temperature range. It is established that, together with existing mechanisms, N-section formation on the VAC of GaSe Cu single crystals is associated with thermofield quenching of the exciton photoconduction.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 90–93, November, 1984.     

Photoluminescence of CaGa<Subscript>2</Subscript>S<Subscript>4</Subscript>:Pr Polycrystals

The photoluminescence (PL) and PL excitation spectra of CaGa₂S₄ polycrystals doped with praseodymium are studied in the regions of the activator absorption and the fundamental absorption of the host. It is found that the PL excitation spectrum consists of two regions: broadband absorption in the range of 200-380 nm corresponding to the fundamental absorption of the host and the narrow-band absorption of the dopant in the range of 430–515 nm. The luminescence spectra are different for different excitation wave-lengths, which occurs because Pr³⁺ ions substitute divalent cations occupying different crystallographic positions in the host crystal lattice.     

Optical absorption and photoconductivity of MnGaInS<Subscript>4</Subscript> single crystals in polarized light

The results of studying optical-absorption and spectral curves of photoconductivity in MnGaInS₄ single crystals are presented for two light polarizations (E || C and E ⊥ C). The intrinsic absorption edge and the band-gap width of MnGaInS4 single crystals in polarized light are determined. The anisotropy of optical absorption and photoconductivity spectrum of MnGaInS₄ single crystals is observed. It is suggested that the polarization splitting of the absorption edge is related to the splitting of the MnGaInS₄ valence band.     

Absorption Spectra of Single Crystals of EuGa2S4 and EuGa2S4:Co

The optical properties of EuGa₂S₄ and EuGa₂S₄:Co single crystals in a range of temperatures from 77 to 300 K are investigated. The single crystals are obtained by the Bridgman method and are characterized by tetragonal syngony. The behavior of the optical transitions in the photon energy range 1.70–2.45 eV and the temperature range 77–300 K is determined. It is established that in the energy range 1.77–1.90 eV absorption is associated with transitions of the Co²⁺ ion, while in the range 2.20–2.40 eV, with indirect allowed optical transitions.     

Electrical and Galvanomagnetic Properties of Extruded Samples of Bi85Sb15 Solid Solutions with Pb and Te Impurities

Russian Physics Journal - The effect of tellurium impurities on the electrical conductivity (σ), Seebeck coefficient (α), and Hall coefficient R of extruded Bi85Sb15 + 0.001 аt.% Pb...