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41.
基于改进遗传算法的布局优化子问题 总被引:2,自引:0,他引:2
本针对子问题,构造了布局子问题(关于同构布局等价类)的改进遗传算法。将该算法应用于二维布局优化子问题,数值实验表明该算法能够在很好地保持图元的邻接关系的前提下找到子问题的最优解。由于布局优化问题可分解为有限个子问题,所以利用该算法可以找到整个布局优化问题的全局最优解。 相似文献
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The far-infrared and infrared reflection spectra of Tl2Ba2Ca2Cu3O10 superconducting film are reported in this paper. It is found there are three sharp reflection edges in both the superconducting and normal states, their positions being near ≈ 150, ≈ 350 and ≈600 cm-1. We attribute these reflection spectra to the Drude free carriers and a wide mid-infrared absorption band. When the incident angle increases from 7° to 30°, some additional stractures appear in the refiection spectra, which are the A2u phonon modes vibrating along c-axis. 相似文献
44.
In the present study, proteins and glycoproteins of mouse embryos at 2-cell,morula and blastocyst stages were analyzed.The techniques of ~(35)S-Met incorporation,ConA antiserum-precipitating ConA-binding proteins, mini-2D-electrophoresis, fluorography,video densitometer scanning and the computer-lmage system were used for analyses.Results of the investigations indicated that proteins and glycoproteins were synthesized by the embryos in a gradual increase manner from 2-cell to blastocyst. A relatively large amount of glycoproteins was synthesized during the morula and blastocyst stages.Two specific small glycoproteins respectively with molecular weights about 6500 and 9000 and PIs at 5.0 and 6.5 were apparently synthesized in the blastocyst but not in the 2-cell or the morula. 相似文献
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A novel type of corner reflector for the reflection of surface plasmon polariton (SPP) is proposed. The reflector consists
of two layers of compensatory media whose permittivity and permeability take opposite signs to that of the corresponding layer
of the SP waveguide. By rigorously solving Maxwell's equations, the reflected SPP is proved to exist. The transverse wave
vector of the reflected SPP is always antiparallel to that of the incident SPP and no phase retardation is introduced. 相似文献
47.
Q.-Y. Shao A.-D. Li J.-B. Cheng H.-Q. Ling D. Wu Z.-G. Liu N.-B. Ming C. Wang H.-W. Zhou B.-Y. Nguyen 《Applied Physics A: Materials Science & Processing》2005,81(6):1181-1185
LaAlO3 (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO2 layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p 相似文献
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CHEN Zhi-hong XU Li BA Xue-qing ZENG Xian-lu 《高等学校化学研究》2006,22(3):302-307
Introduction Migrationandrecruitmentofleukocytesfromblood toinflammatorylesionsitesaresequentiallyregulated byadhesionmoleculesandtheirreceptors[1].These lectinfamilyplaysamajorroleininitiatingattachement ofneutrophilstotheactivatedendothelium.P selectin,… 相似文献