STUDIES ON THE PREPARATION OF ZINC-CONTAINING ACTIVATED CARBON FIBERS AND THEIR ANTIBACTERIAL ACTIVITY

1. INTRODUCTION Microbial pollution will bring about various problems in industry and other vital fields, such as causing decomposing of materials, harming people抯 health. In order to reduce these problems, new antibacterial materials have been demanded. Recently, much attention has been paid to inorganic materials including zinc oxide [1~4]. These inorganic antibacterial materials are now substituting for organic materials to avoid releasing noxious organic molecules harmful to humans;…     

Evolution of non-synchronized binary systems

A model for binary evolution is introduced which can determine whether the rotation of components is synchronized with the orbital motion, and can calculate the evolution of both the synchronized and non-synchronized binary systems. With this model, the evolution of a binary system consisting of a 9 M_⊙ star and a 6 M_⊙ star is studied with mass transfer Case B. The result shows that the synchronization of the rotational and orbital periods can be reached when the binary system is a detached system and before the occurrence of the first mass transfer. After the onset of the first mass transfer, the binary system becomes non-synchronized. The mass accepted component (the secondary) rotates faster with a period much smaller than that of the orbital motion.     

相干态统计特性的弱测量结构研究

理论分析相干态位移参数估计在弱测量方法下的放大效应.引入偏振态作为附属态(Ancilla States),分别进行初选择和后选择,中间的相互作用采用了偏振相关的弱位移操作算符.通过最后检测光子数的分布来估计位移参数;在牺牲检测光子强度的情况下可以有效提高放大效应.     

金属-半导体异质结构纳米晶的可控制备和光谱调控

本文简要综述了金属-半导体异质结构纳米晶的设计、可控制备和物性研究的相关工作.设计了异相成核与生长、选择硫化和种子介导液相外延生长3种不同的方法并以此制备了多种金属-半导体异质结构纳米晶,对其中所涉及的反应机制进行了论述,并简要探讨了金属-半导体异质结构纳米晶的热稳定性、表面等离子共振活性、荧光特性以及异质界面的电荷转移和保持能力.     

掺镱钆镓石榴石激光透明陶瓷纳米粉体的研究

以Gd_2O_3、Yb_2O_3和Ga_2O_3为初始原料,碳酸氢铵为沉淀剂,硫酸铵为分散剂,采用均相共沉淀方法制备了Yb~(3+): Gd_3Ga_5O_(12) (Yb: GGG).用差热-热重分析仪、X 射线衍射仪、红外光谱分析仪、扫描电镜、透射电镜等测试方法对Yb: GGG粉体进行了表征.结果表明:前驱体经过900 ℃煅烧8 h 后已完全转变成纯立方相GGG多晶样品,所得的粉体分散性好,团聚轻,颗粒尺寸在50～100 nm之间.本文亦对均相共沉淀法合成Yb: GGG的反应过程进行了探讨.     

一种二次型忆阻器四阶混沌电路

由HP实验室研制的无源忆阻器得到的荷控二次型忆阻器模型,与有源磁控分段线性和三次光滑忆阻器模型相比,更符合实际.利用此模型并基于蔡氏混沌电路演化而来的拓扑对偶结构设计了一种新型忆阻器四阶混沌电路.理论分析、仿真及电路实现表明,该电路具有依赖于忆阻器初始状态的复杂动力学行为,也会产生随时间和系统参数变化的状态转移等非线性动力学现象,在相轨图中出现"涡眼"和"环眼".     

CdSe纳米晶薄膜的制备与特性研究

采用真空热蒸发技术,在光学玻璃基片上生长出排列整齐、高质量的CdSe纳米晶薄膜.通过X射线衍射(XRD)、X射线光电子能谱分析(XPS)、扫描电镜(SEM)、傅里叶红外光谱(IR)等进行表征.结果表明,薄膜结晶性能较好,纳米晶颗粒约为40 ～70 nm,呈半月状,排列整齐;化学元素配比为49.4∶50.6,稍微富Se;红外透过率高,禁带宽度为1.89 eV,高于块状的CdSe晶体(1.70 eV).     

氮化硼纳米管的高效制备及其表征

本文以B粉、NH3为主要原料,以Fe2O3、CaO为催化剂高效制备了氮化硼纳米管(BNNTs).研究了合成温度,催化剂,合成气氛以及催化剂预处理对氮化硼纳米管形貌、结构以及产率的影响;采用X射线衍射仪,扫描电镜,透射电镜,拉曼光谱仪等手段对制备的氮化硼纳米管进行了表征.结果表明,合成的纳米管管径在50～300 nm之间,长度可达百微米,管身均匀平滑;本方法工艺简单,成本低,合成温度低,氮化硼纳米管产率可以达到85;以上,纯度大于90;,且显微结构可控.氮化硼纳米管的生长机理为典型的VLS.     

Solution Space Coupling in the Random K-Satisfiability Problem

The random K-satisfiability (K-SAT) problem is very difficult when the clause density is close to the satisfiability threshold. In this paper we study this problem from the perspective of solution space coupling. We divide a given difficult random K-SAT formula into two easy sub-formulas and let the two corresponding solution spaces to interact with each other through a coupling field x. We investigate the statistical mechanical property of this coupled system by mean field theory and computer simulations. The coupled system has an ergodicity-breaking (clustering) transition at certain critical value x_d of the coupling field. At this transition point, the mean overlap value between the solutions of the two solution spaces is very close to 1. The mean energy density of the coupled system at its clustering transition point is less than the mean energy density of the original K-SAT problem at the temperature-induced clustering transition point. The implications of this work for designing new heuristic K-SAT solvers are discussed.