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1.
2.
L. Resse L.G.S. Oliveira C.I.L. de Araujo A.R. Pereira R.L. Silva 《Physics letters. A》2019,383(14):1655-1659
In this work, we have used the MuMax3 software to simulate devices consisting of a ferromagnetic thin film placed over a heavy metal thin film. The devices are two interconnected partial-disks where a Néel domain wall is formed in the disks junction. In our simulations we investigate devices with disk radius nm and different distance d between the disks centers (from nm to nm). By applying strong sinusoidal external magnetic fields, we find a mechanism able to create, annihilate and even manipulate a skyrmion in each side of the device. This mechanism is discussed in terms of interactions between skyrmion and domain wall. The Néel domain wall formed in the center of the device interacts with the Néel skyrmion, leading to a process of transporting a skyrmion from one disk to the other periodically. Our results have relevance for potential applications in spintronics such as logical devices. 相似文献
3.
Experimental data on the effect of thallium and sodium impurities on the lattice heat conductivity of PbTe at room temperature
are reported. Because the lattice of lead chalcogenides is strongly polarized near charged impurities, the effect of impurities
on the lattice heat conductivity depends substantially on their charge state. This property of the material has been used
to determine the charge state of the thallium impurity in PbTe. The results obtained argue for a model of quasi-local thallium-impurity
states which assumes low electron-correlation energy at an impurity center.
Fiz. Tverd. Tela (St. Petersburg) 40, 1206–1208 (July 1998) 相似文献
4.
5.
Palladium and molybdenum polycrystalline layers (clusters) have been deposited in a stainless steel UHV system onto a layer of alumina (Al2O3). This layer has been prepared by high temperature oxidation of an aluminium layer. The interaction of this system with nitrogen has been investigated at room temperature by an FEM technique. Under these conditions nitrogen spillover from molybdenum to palladium has been observed. 相似文献
6.
Ya. V. Fattakhov M. F. Galyautdinov T. N. L’vova I. B. Khaibullin 《Technical Physics》1997,42(12):1457-1459
The first results regarding the formation of a two-dimensional periodic structure of local melting regions on a silicon surface
upon pulsed light irradiation are presented. The conditions are established, and the mechanism of the formation of such structures
is discussed.
Zh. Tekh. Fiz. 67, 97–99 (December 1997) 相似文献
7.
A converging perturbation series that can be summed analytically has been obtained for intersubband transitions of electrons
coherently tunneling through the middle of a dimensionally quantized level in an asymmetric double-barrier structure in a
high-frequency terahertz electric field. The possibility of a substantial increase in tunneling current accompanied by either
absorption or emission of a photon has been demonstrated. The quantum efficiency of radiative transitions between dimensionally
quantized levels can be up to 66%.
Zh. éksp. Teor. Fiz. 112, 237–245 (July 1997) 相似文献
8.
L. K. Aminov I. N. Kurkin D. A. Lukoyanov K. P. Chernov 《Physics of the Solid State》1997,39(8):1184-1186
Results are reported for measurements of the spin-lattice relaxation times of E′1 centers in quartz glass, produced by neutron irradiation, with the measurements made at two frequencies 9.25 and 24.0 GHz
over a wide temperature interval 1.5–300 K. The experimental data are interpreted on the basis of interaction mechanisms of
the spins with two-level systems with excitation energies ∼6, ∼26, and ∼420 cm−1. A small modification of the existing theory allows us to explain a number of features of the observed temperature and frequency
dependence of the relaxation rate. The results are compared with the data available in the literature on spin-lattice relaxation
of irradiation centers in crystalline quartz and quartz glass.
Fiz. Tverd. Tela (St. Petersburg) 39, 1335–1337 (August 1997) 相似文献
9.
V. Palyok I.A. Szabó D.L. Beke A. Kikineshi 《Applied Physics A: Materials Science & Processing》2002,74(5):683-687
Surface relief formation at holographic recording on amorphous selenium films was demonstrated and investigated. The presence
of this optical phase modulation component is essential for ensuring significant, stable and erasable optical recording in
a-Se films at 290–320 K temperatures, where conventional photodarkening was known as insignificant and unstable. Photocrystallization
can only be observed in super-exposed a-Se films at the given experimental conditions of hologram recording. Erasing behavior
of surface relief gratings under heat treatment was also investigated in order to reveal further details of the mechanism.
Photoinduced structural transformations within the amorphous phase, connected to local ordering under the condition of light-induced
fluidity, are proposed as an explanation for the relief formation and erasing. The observed reversible optical recording process
may be useful for the various optoelectronic applications of photoconductive a-Se layers.
Received: 12 June 2000 / Accepted: 6 June 2001 / Published online: 30 August 2001 相似文献
10.