Analysis of transient wave scattering from an inclusion with an unilateral smoothly contact interface by BEM

Summary A 2D time-domain Boundary Element Method (BEM) is applied to solve the problem of transient scattering of plane waves by an inclusion with a unilateral smooth contact interface. The incident wave is assumed strong enough so that localized separations take place along the interface. The present problem is indeed a nonlinear boundary value problem since the mixed boundary conditions involve unknown intervals (separation and contact regions). In order to determine the unknown intervals, an iterative technique is developed. As an example, we consider the scattering of plane waves by the cross section of a circular cylinder embedded in an infinite solid. Numerical results for the near field solutions are presented. The distortion of the response waves and the variation of the interface states are discussed. The financial support by the China National Natural Science Foundation under Grant No. 19872001 and No. 59878004 is gratefully acknowledged. The second author is also grateful to the support of the National Science Fund for Distinguished Young Scholars under Grant No. 10025211.     

MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy

MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 °C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 2¯]_MgO(0 0 1)[1 0 0]_YSZ with four twin variants related by a 90° in-plane rotation about the [1 1 1]_MgO axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy.     

A Study of Drop Size Distribution in Multistage Bubble Extractor

Results obtained in determining experimentally the mean volume-surface drop diameter of the dispersed phase in a multistage bubble extractor are presented.     

Mathematical simulation of the evaporation in operation area of a bubble evaporator

Simulation of evaporation in operation area of an evaporator is considered. We obtained a formalized model of this process and optimum conditions of an engineering system on the basis on the analysis.     

Geometric modeling of homoepitaxial CVD diamond growth: I. The {1 0 0}{1 1 1}{1 1 0}{1 1 3} system

Plasma-assisted CVD homoepitaxial diamond growth is a process that must satisfy many stringent requirements to meet industrial applications, particularly in high-power electronics. Purity control and crystalline quality of the obtained samples are of paramount importance and their optimization is a subject of active research. In the process of such studies, we have obtained high purity CVD diamond monocrystals with unusual morphologies, namely with apparent {1 1 3} stable faces. This phenomenon has led us to examine the process of CVD diamond growth and build up a 3D geometrical model, presented here, describing the film growth as a function of time. The model has been able to successfully describe the morphology of our obtained crystals and can be used as a predictive tool to predetermine the shape and size of a diamond crystal grown in a given process configuration. This renders accessible control of desirable properties such as largest usable diamond surface area and/or film thickness, before the cutting and polishing manufacture steps take place. The two latter steps are more sensitive to the geometry of the growth sectors, which will be addressed in a companion paper.Our model, applicable to the growth of any cubic lattice material, establishes a complete mapping of the final morphology state of growing diamond, as a function of the growth rates of the crystalline planes considered, namely {1 0 0}, {1 1 1}, {1 1 0}, and {1 1 3} planes, all of which have been observed experimentally in diamond films. The model makes no claim as to the stability of the obtained faces, such as the occurrence of non-epitaxial crystallites or twinning. It is also possible to deduce transient behavior of the crystal morphology as growth time is increased. The model conclusions are presented in the form of a series of diagrams, which trace the existence (and dominance) boundaries of each face type, in presence of the others, and where each boundary crossing represent a topology change in terms of number of faces, edges and vertices. We validate the model by matching it against crystals published in the literature and illustrate its predictive value by suggesting ways to increase usable surface area of the diamond film.     

Terahertz wave tomographic imaging with a Fresnel lens

We demonstrate three-dimensional tomographic imaging using a Fresnel lens with broadband terahertzpulses.Objects at various locations along the beam propagation path are uniquely imaged on the sameimaging plane using a Fresnel lens with different frequencies of the imaging beam.This procedure allowsthe reconstruction of an object's tomographic contrast image by assembling the frequency-dependentimages.