Anomalous behavior of conductivity of the confined Q1D electron system over liquid helium

Conductivity of electrons in a quasi-one-dimensional (Q1D) system over liquid helium in narrow channels with the parabolic profile of the potential well has been investigated at temperature T, from 0.4 to 1.8 K, for different driving electric fields and radius of channel curvature. The interval of linear electron densities varied from 2.18×10³ up to 1.7×10⁶ cm⁻¹.

The inverse mobility (1/μ_eff) in the electron-ripplon scattering region at the high linear densities of charges in the channel increases with temperature decreasing. This anomalous behavior of the electron transport in the low-temperature region has been explained by either the electron ordering or the polaronic effects in confined conducting channels. The nonlinear behavior of the electron velocity as a function of a driving electric field is supposed to be due to Breg–Cherenkov radiation of the ripplons. The radiation occurred if the velocity of electrons in the channel approaches to the critical value.     

Scattering of scalar fields by rough surfaces. Accounting for multiple scattered waves

Physical Engineering Institute, Moscow. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 34, No. 5, pp. 565–574, May, 1991.     

Kink propagation induced by multiplicative noise

The influence of spatio-temporal external multiplicative fluctuations on a single kink in a bistable distributed system is studied. For this purpose we derive a stochastic dynamic equation for the position of the shifted kink. An analytical estimate for spatio-temporally uncorrelated fluctuations is represented and discussed. We draw the conclusion that multiplicative noise induces a propagation of the most probable kink into the region of larger noise. This effect is demonstrated in numerical simulations.     

Die Lasker-Bedingung für Nicht Endlich Erzeugte Moduln

Ohne Zusammenfassung

---

     

Growth of InP/InGaAs multiple quantum well structures by chemical beam epitaxy

InP/InGaAs multiple quantum well structures with up to 200 periods have been grown by CBE. These structures exhibit exceptional lateral uniformity, measured as ±1 Å in period, ±13 ppm in lattice mismatch and ±0.5 nm in wavelength across a 2 inch wafer. Good surface morphology, sharp interfaces and excellent growth control have all been demonstrated.     

On a class of elliptic operators with nonpolynomial degeneracy on a boundary

Rostov-on-Don. Translated fromSibirskiî Matematicheskiî Zhurnal, Vol. 33, No. 5, pp. 91–99, September–October, 1992.