Ion Flux from the Cathode Region of a Vacuum Arc

This paper reviews the properties of the cathode ion flux generated in the vacuum arc. The structure and distribution of mass erosion from individual cathode spots and the characteristics of current carriers from the cathode region at moderate arc currents are described. An appreciable ion flux (～10% of total arc current) is emitted from the cathode of a vacuum arc. This ion flux is strongly peaked in the direction of the anode, though some ion flux may be seen even at angles below the plane of the cathode surface. The observed spatial distribution of the ion flux is expressed quite well as an exponential function of solid angle. The ion flux is quite energetic, with average ion potentials much larger than the arc voltage, and generally contains a considerable fraction of multiply-charged ions. The average ion potential and ion multiplicity increase significantly for cathode materials with higher arc voltages, but decrease with increasing arc current for a particular material. The main theories concerning ion acceleration in cathode spots are the potential hump theory (PH), which assumes that all ions are created at the same potential, and the gas dynamic theory (GD), which assumes that all ions are created with the same flow velocity. Experimental data on the potentials and energies of individual ions indicates that these theories in their original forms are not quite correct, however extensions or modifications of the PH and GD theories seem very likely to be able to predict correct values for the charge states, potentials, and energies of individual ions.     

Scattering of scalar fields by rough surfaces. Accounting for multiple scattered waves

Physical Engineering Institute, Moscow. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 34, No. 5, pp. 565–574, May, 1991.     

Ion scattering spectroscopy and scanning tunneling microscopy: A powerful combination for surface structure analysis

Low-energy ion backscattering and scanning tunneling microscopy (STM) have been used in combination to get better insight into the field of surface crystallography. The synergic effectiveness resulting from the complementing character of the two methods has been exemplified at clean NiAl(111) and for oxygen and nitrogen adsorption on Cu(110). The position of the atom cores is accessible by the low-energy noble gas impact collision ion scattering spectroscopy with neutral detection (NICISS). As a technique averaging over a macroscopic area of the sample, NICISS is better suited to supply information on features of completely developed phases, either on clean or adsorbate saturated surfaces. Additional information, on the other hand, can be gained by scanning tunneling microscopy (STM), which as a powerful local probe may be used to image surfaces with atomic resolution and to monitor defects, steps and the growth kinetics of e.g. adsorption-induced phase changes.     

Growth of InP/InGaAs multiple quantum well structures by chemical beam epitaxy

InP/InGaAs multiple quantum well structures with up to 200 periods have been grown by CBE. These structures exhibit exceptional lateral uniformity, measured as ±1 Å in period, ±13 ppm in lattice mismatch and ±0.5 nm in wavelength across a 2 inch wafer. Good surface morphology, sharp interfaces and excellent growth control have all been demonstrated.     

Specific carbon-13 labelling of leucine residues in human growth hormone.

Biosynthetic human growth hormone specifically 13C-labelled in the carbonyl positions of all 26 leucine residues has been obtained by recombinant DNA techniques using 13C-labelled leucine and an E. coli strain that requires leucine. It is shown that, on the whole, the labelling is specific with no significant mislabelling as would have been the case had the 13C-labelled leucine been metabolized.     

On a class of elliptic operators with nonpolynomial degeneracy on a boundary

Rostov-on-Don. Translated fromSibirskiî Matematicheskiî Zhurnal, Vol. 33, No. 5, pp. 91–99, September–October, 1992.