Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into Ti_xSi_y substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 °C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers.     

Thermal properties of poly(styrene) containing brominated aryl phosphate additives

General purpose poly(styrene) is a large volume commodity polymer widely used in a range of applications. For many of these the presence of an additive to impart some flammability resistance is required. Most commonly, brominated aromatics are used for this purpose. As the polymer undergoes combustion these compounds decompose to generate bromine atoms and/or hydrogen bromide which escape to the gas phase and trap flame propagating radicals. While these species are effective in inhibiting flame propagation they present the opportunity for loss of halogen to the atmosphere. For this reason, the use of these compounds is being limited in some parts of the world. Phosphorus compounds, on the other had, impart a flame retarding influence by promoting char formation at the surface of the burning polymer. This prevents heat feedback to the polymer and consequent pyrolysis to generate fuel fragments. The combination of both bromine and phosphorus present in a single compound might generate a superior flame-retarding additive in that both modes of retardancy might be promoted simultaneously. Should this be the case smaller amounts of additive might be necessary to achieve a satisfactory level of flame retardancy. A series of such additives, brominated aryl phosphates, has been synthesized and fully characterized spectroscopically. Blends of these additives, at various levels, with poly(styrene) have been examined by DSC, TG and in the UL-94 flame test. The flammability of the polymer is dramatically diminished by the presence of the additive.     

Magnetisation reversal in media with perpendicular anisotropy

In this paper, we discuss two key aspects of magnetisation reversal in magnetic thin films with perpendicular anisotropy. Firstly, a study has been made of the additional field required to erase data written perpendicular to a thin film recording disk as the linear data density is increased. It has been found that an increase in data density from 40 to 360 kfci results in an increase of 1.25 kOe in the field required to erase the data. Secondly, the effect of varying the level of exchange coupling by co-sputtering CoCrPt samples with SiO₂ has been studied using a characterisation technique that is independent of the self-demagnetising field. It has been found that the samples are fully exchange de-coupled when the film contains >9.8% SiO₂ and the activation volume of reversal remains constant for higher levels of SiO₂.     

XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation

In this paper, nitridation process of GaAs (1 0 0) substrates was studied in-situ using X-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical method I-V and photoluminescence surface state spectroscopy (PLS³) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces.The elaborated structures were characterised by I-V analysis. The saturation current I_S, the ideality factor n, the barrier height Φ_Bn and the serial resistance R_S are determined.The elaborated GaN/GaAs structures are also exhibited a high PL intensity at room temperature. From the computer-aided analysis of the power-dependent PL efficiency measurements (PLS³ technique), the value of the interface state density N_SS(E) close to the mid-gap was estimated to be in the range of 2-4 × 10¹¹ eV⁻¹ cm⁻², indicating a good electronic quality of the obtained interfaces.Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed.     

Spatiotemporal and Thermal Analysis of VCSEL for Short-range Gigabit Optical Links

High-speed Optoelectronic Modules using Vertical Cavity Surface Emitting Lasers (VCSEL) coupled to Multi Mode Fibers (MMF) are a performing and low-cost solution for 10 Gigabit Ethernet (10 GbE) in short-distance optical links. A complete model of the spatiotemporal behavior of multimode VCSELs, through static and dynamic response, noise, thermal effects, and its coupling to MMF has been investigated. Relative Intensity Noise shows modal dependence and can be affected by spatial filtering due to coupling and fiber propagation. Simulations permit to evaluate critical parameters, such as modulation formats, launching conditions, and operating temperature for global bandwidth and eye diagram optimization up to 10 Gb/s. Simulation results are compared to measurements on prototype optoelectronic modules.     

Modelling treatment effects in the HIV/AIDS epidemic

Advances in recent treatments for HIV/AIDS patients have shown dramatic outcomes in extending the incubation period and AIDS survival time, while also providing significant improvements in the quality of patients' lives. A compartmental model is proposed to analyse the effects of the various treatment regimens which have been introduced. The results produced are in good agreement with routinely collected data relating to levels of HIV/AIDS incidence and prevalence in the UK homosexual population. Some parameter values within the model are obtained from surveys, census results, etc, but others are derived using a maximum likelihood estimation procedure. Finally, the model is used to project levels of incidence and prevalence over the next few years, and to investigate several possible scenarios.     

Optical and photoelectric properties of pure and cadmium-and lead-doped neodymium sesquisulfide thin films

A technique for preparing γ-Nd₂S₃ crystalline thin films through discrete vacuum thermal evaporation of a presynthesized bulk material is developed. The films deposited are doped with cadmium and lead. The reflectance and transmittance spectra of the films are measured in the photon energy range 0.2–3.0 eV at a temperature of 300 K. The frequency analysis of the absorption coefficient demonstrates that the γ-Nd₂S₃ films are characterized by an exponential absorption edge. The photoconductivity spectra and temperature dependences of the photoconductivity for the γ-Nd₂S₃ films doped with cadmium and lead are measured in the photon energy range 0.2–3.3 eV at temperatures varying from 115 to 380 K. The experimental data obtained are interpreted under the assumption that the acceptor levels formed by vacancies in the cation sublattice and compensated for by cadmium and lead donor dopants play a crucial role in the photoconduction. The ionization energy at the lead donor level is determined.     

Energy level alignment between C60 and Al using ultraviolet photoelectron spectroscopy

The energy level alignment between C₆₀ and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C₆₀ and Al, C₆₀ was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C₆₀ deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C₆₀ layers. The observed vacuum level shift means that the interface dipole exists at the interface between C₆₀ and Al. The barrier height of electron injection from Al to C₆₀ is 0.11 eV, which is smaller value than that of hole injection.     

Establishment of hybrid-derived offspring populations in the Ohomopterus ground beetles through unidirectional hybridization

An approach to deduce the mechanism of stabilization of the hybrid-derived populations in the Ohomopterus ground beetles has been made by comparative studies on the phylogenetic trees of the mitochondrial and nuclear DNA. A phylogenetic tree based on the internal transcribed spacer (ITS) of nuclear ribosomal gene roughly reflects the relations of morphological species group, while mitochondrial NADH dehydrogenase subunit 5 (ND5) gene shows a considerable different topology on the tree; there exist several geographically-linked lineages, most of which consist of more than one species. These results suggest that the replacement of mitochondria has occurred widely in the Ohomopterus species. In most cases, hybridization is unidirectional, i.e., the species A (♂) hybridized with another species B (♀) and not vice versa, with accompanied replacement of mitochondria of A by those of B. The results also suggest that partial or complete occupation of the distribution territory by a hybrid-derived morphological species. The morphological appearance of the resultant hybrid-derivatives are recognized as that of the original species A. Emergence of a morphological new species from a hybrid-derived population has been exemplified.