Dipolar 31P NMR spectroscopy of crystalline inorganic phosphorus compounds.

The ability of the 90 degrees-t1-180 degrees pulse sequence to produce accurate dipole-dipole coupling information in solids is investigated. To this end, the experimental 31P spin echo decays are measured for eighteen crystalline phosphides and phosphorus chalcogenides and compared with simulations, based on the known internuclear distances in these compounds. The experimental results are generally found accurate in compounds where the dominant contribution to the dipole-dipole coupling arises from nuclei in structurally inequivalent sites with large chemical shift anisotropies. For this situation, the quantum mechanical "flip-flop" term in the dipolar Hamiltonian is suppressed and the dipole-dipole coupling is entirely heteronuclear in character. All of those compounds that do not obey this condition show accelerated spin echo decays due to a fractional contribution of the flip-flop term and possibly incomplete refocusing of chemical shift terms on the time scale of the experiment. The results confirm on an empirical basis that the spin echo NMR technique can provide accurate dipole-dipole coupling information (and thus distance distributions) in disordered solids and glasses.     

Large third-order nonlinear optical properties of C70 fullerene in the infrared regime

The nonlinear third-order optical susceptibility of C₇₀ in a toluene solution is measured for the first time by the method of degenerate four-wave mixing using 10 ns laser pulses at 1.06 m. The third-order susceptibility X _in ⁽³⁾ is 5.6×10^–12 esu for a C₇₀ toluene solution at a concentration of 0.476 g/l. The correspondent magnitude of the hyperpolarizability ₁₁₁₁ of the C₇₀ molecule is 1.2×10^–30 esu which is in a good agreement with the prediction given by the model of a free electron in a spherical box.     

Electrical activity of dislocations: Prospects for practical utilization

The electrical activity of interfacial misfit dislocations in silicon has been examined using the electron beam induced current technique (EBIC) in a scanning electron microscope. Clean misfit dislocations, i.e. no EBIC contrast, formed during high-temperature Si(Ge) chemical vapor epitaxy were studied. These defects were subsequently decorated with known metallic impurities (Au and Ni) by diffusion at 400° C to 1130° C from a back-side evaporated layer. Qualitative analysis of the electrical activity in relation to the energy levels anticipated for the clean or decorated dislocations is presented. Of particular interest is the case of defect-induced conductivity type inversion which occurred both at the top surface and at the buried dislocated interfaces of the multilayer. The prospects for using dislocations in a beneficial manner as active elements in electronic devices are discussed.     

Production properties ofD 0,D +,D *+ andD s + in 230 GeV/cπ − andK −-Cu interactions

We have studied the hadronic production of charmed mesons in the NA 32 experiment at CERN. A special trigger together with a high resolution vertex detector consisting of charge coupled devices and silicon microstrip detectors allowed the selection of very clean samples of charmed mesons. We have collected 852 fully reconstructed decays: 60D _s ⁺ →K ⁺ K ^?π⁺, 543D°→K ^?π⁺ andK ^?π⁺π^?π⁺ as well as 249D ⁺→K ^?π⁺π⁺ (or charge conjugate). 147 mesons out of our \({{D^0 } \mathord{\left/ {\vphantom {{D^0 } {\bar D^0 }}} \right. \kern-0em} {\bar D^0 }}\) sample were produced via chargedD ^* state. For all charmed mesons we determine the total production cross-section and study thex _F andp _t ² distributions.