Cu/HMOR催化二甲醚羰基化合成乙酸甲酯: 催化剂制备方法的影响 (cited: 2)

采用氨蒸发法、尿素水解法、离子交换法及浸渍法制备HMOR负载的Cu催化剂, 考察其催化二甲醚(DME)羰基化合成乙酸甲酯(MA)性能. 结果表明离子交换法制得Cu/HMOR催化剂在Cu的金属中心和酸性分子筛载体的共同作用下具有较好催化反应活性. 在210 oC、1.5 MPa、空速4883 h^-1,DME转化率为95.3%,MA选择性为94.9%. 对催化剂进行N2物理吸附、X射线衍射、NH₃程序升温脱附和CO程序升温脱附等表征发现,离子交换法制得Cu/HMOR催化剂具有较高比表面、大量弱酸及一定中强酸、适中的CO吸附强度,提高了CO插入DME羰基化反应活性.     

BN链掺杂的石墨烯纳米带的电学及磁学特性

基于密度泛函理论第一性原理系统研究了BN链掺杂石墨烯纳米带(GNRs)的电学及磁学特性, 对锯齿型石墨烯纳米带(ZGNRs)分非磁态(NM)、反铁磁态(AFM)及铁磁性(FM)三种情况分别进行考虑. 重点研究了单个BN链掺杂的位置效应. 计算发现: BN链掺杂扶手椅型石墨烯纳米带(AGNRs) 能使带隙增加, 不同位置的掺杂, 能使其成为带隙丰富的半导体. BN链掺杂非磁态ZGNR的不同位置, 其金属性均降低, 并能出现准金属的情况; BN链掺杂反铁磁态ZGNR, 能使其从半导体变为金属或半金属(half-metal), 这取决于掺杂的位置; BN链掺杂铁磁态ZGNR, 其金属性保持不变, 与掺杂位置无关. 这些结果表明: BN链掺杂能有效调控石墨烯纳米带的电子结构, 并形成丰富的电学及磁学特性, 这对于发展各种类型的石墨烯基纳米电子器件有重要意义. 关键词： 石墨烯纳米带 BN链掺杂 输运性质 自旋极化     

回收LNG冷能的新型碳二烃两级膨胀朗肯循环

提出了一种新型的回收LNG冷能的两级膨胀朗肯动力循环,可以乙烯或乙烷作为工质。此工艺流程采用多股流低温板翅式换热器(MSCHE)作为主要设备,使工质两级膨胀并采用回热过程,可以使循环的冷能利用效率得到明显提高。针对此工艺分别以乙烯或乙烷为工质,与LNG直接膨胀结合和不结合,共四种方案采用HYSYS软件进行工艺模拟,并对模拟结果进行了比较和分析,可得出无LNG膨胀的乙烯两级膨胀工艺流程最为合理,其冷能和火用的利用率可以分别达到19.67%和21.75%。     

Impacts of air pressure on the evolution of nanosecond pulse discharge products

Based on the nonequilibrium plasma dynamics of air discharge, a dynamic model of zero-dimensional plasma is established by combining the component density equation, the Boltzmann equation, and the energy transfer equation. The evolution properties of nanosecond pulse discharge (NPD) plasma under different air pressures are calculated. The results show that the air pressure has significant impacts on the NPD products and the peak values of particle number density for particles such as O atoms, O3 molecules, N2(A3) molecules in excited states, and NO molecules. It increases at first and then decreases with the increase of air pressure. On the other hand, the peak values of particle number density for N2(B3) and N2(C3) molecules in excited states are only slightly affected by the air pressure.     

Role of chelating agent in chemical and fluorescent properties of SnO2 nanoparticles

A modified polyacrylamide gel route is applied to synthesize SnO2 nanoparticles. High-quality SnO2 nanoparticles with a uniform size are prepared using different chelating agents. The average particle size of the samples is found to depend on the choice of the chelating agent. The photoluminescence spectrum detected at λex = 230 nm shows a new peak located at 740 nm due to the surface defect level distributed at the nanoparticle boundaries.     

785nm便携式光栅外腔可调谐半导体激光器的研制和输出特性

针对移频激发拉曼光谱测试系统的小型化需求,在Littrow结构中,采用商用的785nm大功率激光二极管作为增益器件,构建了一款便携式光栅外腔可调谐半导体激光器。该激光器通过采用一种新型的波长调谐方法,即以改变半导体增益器件相对于准直透镜的水平位置来实现波长的连续调谐,实现了尺寸为140mm×65mm×50mm的小型化结构设计。相比于传统的旋转衍射光栅改变光线在光栅上的入射角来实现波长调谐的方式,该方法有效地缩减了增益器件的平移距离,从而有利于便携式外腔激光器波长的快速宽带调谐。实验结果表明,该激光器具有较宽的波长调谐范围,在340~900mA注入电流下均可实现10nm以上的波长调谐,尤其在900mA大注入电流下,其波长调谐覆盖779.40~791.07nm,调谐范围可达11.67nm,且激射线宽小于0.2nm,单波长输出功率最高可达280mW,放大的自发辐射抑制比大于25dB,呈现出较优异的输出性能,满足移频激发拉曼光谱检测系统对光源的基本要求。此外,该激光器可采用一微型压电陶瓷驱动器来实现波长的电动调谐,实验获得了1.35nm的波长调谐范围,证实了所制785nm便携式光栅外腔可调谐半导体激光器适合作为便携式移频激发拉曼光谱检测系统的光源用于减除原始拉曼光谱中的荧光背景。     

Productions of X(1835) as baryonium with sizable gluon content

X(1835) has been treated as a baryonium with sizable gluon content, and to be almost flavor singlet. This picture allows us to rationally understand X(1835) production in J/ψ radiative decays, and its large couplings with pˉ, η^′ππ. The processes ϒ(1S) → γX(1835) and J/ψ → ωX(1835) have been examined. It has been found that Br(ϒ(1S) → γX(1835))Br(X(1835) → pˉ) < 6.45×10^-7, which is compatible with CLEO's recent experimental result (Phys. Rev. D 73, 032001 (2006) hep-ex/0510015). The branching fractions Br(J/ψ → ωX(1835)), Br(J/ψ → ρX(1835)) with X(1835) → pˉ and X(1835) → η^′π⁺π^- have been estimated by the quark-pair creation model. We show that they are heavily suppressed, so the signal of X(1835) is very difficult, if not impossible, to be observed in these processes. The experimental checks for these estimations are expected. The existence of the baryonium nonet is conjectured, and a model-independent derivation of their production branching fractions is presented.     

Characterization of ceramic PVD thin films on AZ31 magnesium alloys

Ceramic thin films have been widely used to protect the metal substrate as coatings in the past years. In order to improve the poor corrosion resistance of AZ31 magnesium alloy, the study in this paper used the electron beam evaporation method to prepare ceramic PVD films on its surface with TiO₂ and Al₂O₃ as donors, respectively. Atomic force microscopy (AFM), scanning electron microscope (SEM), energy dispersive X-ray spectrometer (EDS), Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were used to investigate the surface morphology, composition and microstructure of the thin films. Both films deposited on AZ31 took on compact top surface morphologies and grew as amorphous structures on substrate. AES test not only showed that films compositions deviated the standard stoichiometric ratios, but also found that element Mg diffused into films and existed as magnesium oxide in the TiO_x film as well as the AlO_x film. In the electrochemical corrosion test, the AlO_x coating on AZ31 exhibited the largest electrochemical impedance in a 3.5% NaCl solution. But it did not show better corrosion resistance than others for the poorer adhesion. Even if its thickness was small, the TiO_x coating on AZ31 exhibited the best corrosion resistance in this study. According to the observation and analysis, the damage of these films on AZ31 in aggressive solutions was mainly due to the existence of pores, microcracks, vacancies and poor adhesion between coating and substrate.     

Spin-transfer switching in MgO magnetic tunnel junction nanostructures

Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (J_c0) down to 2 MA/cm², which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlO_x MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed.     

Electron attenuation lengths in fullerene and fullerides

Using X-ray photoemission measurements, we have determined the attenuation length of C 1s photoelectrons in C₆₀ film to be 21.5 Å with the incident photon energy of Mg Kα radiation. The inelastic mean free path calculated with the TPP-2M algorithm coincides fairly well with the experimentally determined attenuation length, indicating the validity of the algorithm to fullerene and fullerides. The inelastic mean free paths for some fullerides, i.e. K₃C₆₀, K₆C₆₀, Ba₄C₆₀, Sm_2.75C₆₀ and Sm₆C₆₀ are calculated to help the quantitative analyses of the photoemission spectra for these compounds.