Electrochemical Properties of Poly-3-methylthiophene Films: A Cyclic Voltammetry and Chronoamperometry Study

The charge transfer in poly-3-methylthiophene films in 0.05–0.5 M LiClO₄ solutions in acetonitrile is studied by cyclic voltammetry and chronoamperometry. An analysis of data on the current relaxation following a film perturbation by a low-voltage pulse reveals two constituents of the current relaxation, both exponentially dependent on time. Dependence of parameters of the empirical equation derived for the current relaxation on experimental variables is studied.     

Conditional distributions of record values and characterizations of distributions

We consider some regression relations for record values X(n), n > 0, generated by a sequence of independent random variables X₁, X₂, X₃,... with a common continuous cumulative distribution function F(x). New characterizations of distributions based on regression properties of record values are obtained. Bibliography: 7 titles. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 339, 2006, pp. 5–14.     

Algorithms of motion planning for a six-legged walking machine

This paper investigates algorithms of motion planning for a six-legged walking machine over complex terrain. Application of the Rodrigues-Hamilton parameters for describing the orientation of the body enables one to develop algorithms of motion planning for the body and legs in an absolute coordinate frame with automatic adaptation to the surface. Experiments with a laboratory scale walking machine have demonstrated the efficiency of proposed algorithms. __________ Translated from Fundamentalnaya i Prikladnaya Matematika, Vol. 11, No. 7, pp. 197–206, 2005.     

Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors

The energy levels of neutral anion (V_A) and cation (V_C) vacancies and antisite defects are calculated for the anion C_A and cation A_C sublattices of III–V semiconductors. An averaged energy level position for these defects is estimated to be E_av ^abs = 4.9 eV. The position coincides with the local charge electroneutrality level. It is shown that the case, where the total energies of formation of V_A, V_C and antisite C_A, A_C defects in the sublattices of binary semiconductors are similar, corresponds to the point-defect equilibrium condition and stabilization of the Fermi level in the proximity of the local charge electroneutrality level. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 17–22, May, 2007.