D-N交替法与Schwartz交替法的收敛关系分析

This paper has demonstrated that the Schwartz alternating process must converge if D-N alternating process has converged. Its technique is that the overlapping regions in Schwartz alternating process are considered as independent domains, then Schwartz alternating process could be transformed into D-N alter-nating process. Finally the convergence estimation of Schwartz alternating process could be obtained. The results show that its convergence rate is same as that of D-N alternating process.     

FI代数的滤子

研究FI代数的滤子理论，建立F滤子、P滤子、Q滤子、C滤子之间的联系．     

肿瘤微波热疗的温度场预示及热损伤研究

本文将热损伤的产生和影响引入到肿瘤的微波热疗中。运用微波能量比吸收率SAR的分布分析了微波在组织中的传输和吸收过程,并对微波热疗过程中的温度场、热损伤分布以及血液灌注率的变化进行了数值模拟。     

正交变换在重积分中某些应用

正交变换是代数学的基本内容 ,其用途十分广泛 .重积分的计算往往存在技术性的困难 ,若利用“正交变换”的有关理论去解决某些重积分的计算问题是颇有功效的 .本文将以“正交变换”为工具 ,简洁的处理重积分的某些问题     

正常金属/超导/正常金属双垒隧道结中的量子相干输运

考虑到量子相干效应和界面散射效应 ,利用 L ambert理论模型 ,计算正常金属 /绝缘层 /超导 /绝缘层 /正常金属双垒隧道结中的准粒子输运系数和隧道谱。研究表明 :( 1)所有的准粒子输运系数和电导谱在超导能隙之上都随能量作周期性振荡 ,其振荡周期依赖于超导层的厚度 ;( 2 )在超导能隙之上 Andreev反射系数随能量呈现周期性消失现象 ;( 3)在绝缘层势垒强度取很大的隧道极限下 ,超导层中会形成一系列的准粒子束缚态 ,其位置由量子化条件决定 ;( 4)界面散射效应不仅能压低各子能隙电导峰 ,还能使子能隙电导峰劈裂为两个峰。     

Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.     

ICP-AES同时测定混合矿物素中的磷、钙、铁、铜、锌、锰、镁、钴

采用ICP－AES法测定混合矿物素中的磷、钙、铁、铜、锌、锰、镁、钴元素含量，并对样品的溶解酸和酸用量、元素分析线的选择以及共存元素间的干扰进行了研究。该法简便、快速，精密度和准确度较好。     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Characteristics and structures of weak efficient surfaces of production possibility sets

This paper studies the characteristics and structure of the weak surface of the production possibility set. We apply techniques and methods of transferring a polyhedral cone from its intersection form to its sum form, identify an intersection representation of the production possibility set. We give the structure theorem of weak surface of the production possibility set, which includes three complementary slackness conditions. We define the input weak efficiency and output weak efficiency for different DEA models according to the representation of the intersection form. It investigates the characteristics of the weak surfaces, and proves the structure theorems of input weak DEA efficiency and output weak DEA efficiency. The structure theorems establish weighted combination of inputs and outputs that are weak DEA efficient. Numerical examples are provided for illustration.     

Solid codes and the uniform density of fd-domains

By means of further investigation of solid codes,the problem“Is every fd-domain uni- formly dense”proposed by Yuqi Guo,C.M.Reis and G.Thierrin in 1988 is solved in this paper.