Medicinal Flowers. XXXI. Acylated oleanane-type triterpene saponins, Sasanquasaponins I-V, with antiallergic activity from the flower buds of Camellia sasanqua

The methanolic extract and its 1-butanol-soluble fraction from the flower buds of Camellia sasanqua THUNB. were found to show inhibitory activities on the release of β-hexosaminidase from rat basophile leukemia (RBL-2H3) cells. From the 1-butanol-soluble fraction, five new acylated oleanane-type triterpene saponins, sasanquasaponins I-V, were isolated together with a known saponin and their chemical structures were elucidated on the basis of chemical and physicochemical evidence. The principal saponin constituents, sasanquasaponins I-III, with an acyl group at the 22-position of the aglycon part showed the inhibitory effects on the release of β-hexosaminidase and some structure-activity relationships were reported.     

Quantum coherence in a superfluid Josephson junction

We report a new kind of experiment in which we take an array of nanoscale apertures that form a superfluid (4)He Josephson junction and apply quantum phase gradients directly along the array. We observe collective coherent behaviors from aperture elements, leading to quantum interference. Connections to superconducting and Bose-Einstein condensate Josephson junctions as well as phase coherence among the superfluid aperture array are discussed.     

Quantum interference of Rashba-type spin-split surface state electrons

We studied the quantum interference of electrons in the Bi (p(x), p(y)) orbital-derived j = 1/2 spin-split surface states at Bi/Ag(111)√3 × √3 surfaces of 10 monolayer thick Ag(111) films on Si(111) substrates. Surface electron standing waves were observed clearly at the energy (E) below the intersection of the two spin-split downward dispersing parabola bands (E(x)). The E dependence of the standing wave pattern reveals the dispersion as the average of the two spin-split surface bands due to the interference between |(k + Δ), ↑> and |-(k - Δ), ↑> [or (|(k - Δ), ↓>) and |-(k + Δ), ↓>] states. In contrast, it was impossible to deduce the dispersion from the standing wave pattern at E ≥ E(x) because the surface electron cannot find its backscattered state with the same spin polarization.     

Measurement of angular distribution of soft X‐ray radiation from thin targets in the tabletop storage ring MIRRORCLE‐20SX

The only available tabletop electron storage rings are the machines from the MIRRORCLE series. The electrons are accelerated in a microtron and injected into the storage ring. During its circulation, each electron passes through a tiny target many times, emitting a photon beam. Both the spectrum and the angular distribution of the radiation depend on the material, the thickness and the shape of the target. In this paper measured angular distributions of the radiation from several different targets in the magnetic field of the 20 MeV storage ring MIRRORCLE‐20SX are presented. The detector comprises a 3 mm × 3 mm × 8.5 µm plastic scintillator (PS) coupled to a photomultiplier by a bundle of optical fibers. The output of the photomultiplier is digitized by an IF converter. This detector is sensitive mostly to soft X‐ray radiation, and its PS is moved by a mechanical system in a plane perpendicular to the radiation axis. The measured angular distributions for Mo and Sn targets contain an annulus which is attributed to transition radiation. The angular distributions for Al, carbon nanotube and diamond‐like carbon (DLC) targets show some suppression of the radiation along the magnetic field. This is the first evidence of observation of the angular distribution of synchrotron Cherenkov radiation, which represents Cherenkov radiation in a magnetic field. The power radiated from the DLC target is estimated.     

Single-shot polarization-imaging digital holography based on simultaneous phase-shifting interferometry

We propose single-shot digital holography which is capable of simultaneously capturing both the information of multiple phase-shifted holograms and the distribution of the polarization. In this technique, a single image sensor records both the information required for phase-shifting interferometry and that of the polarization states of objects using an array of polarizers. The essence of the technique is the capability of imaging the distribution of the polarization of three-dimensional objects with a single-shot exposure by using the space-division multiplexing of holograms. The validity of the proposed technique was confirmed by the preliminary experiments.     

基于MPS方法的汽泡凝结数值模拟研究

采用移动粒子半隐式(MPS)方法对静止过冷水中单个汽泡的凝结现象进行了数值模拟,研究了不同初始压力和初始直径时饱和蒸汽汽泡凝结过程,获得了凝结过程中汽泡形状、当量直径和压力的变化规律;汽泡初始压力为0.1～0.5MPa,初始直径为2mm、3mm和5mm;过冷水压力为0.1MPa,温度为70℃。结果表明两相界面不存在压差时,凝结过程中汽泡始终保持球形,汽泡当量直径逐渐减小,压力近似不变;相界面存在压差时,凝结过程中汽泡从球形逐渐变为心形、半月形,汽泡当量直径和压力会出现周期性振荡,且初始压力越大振荡幅度越大。     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50–200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H₂ and NH₃, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10⁸ cm⁻².