Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50–200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H₂ and NH₃, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10⁸ cm⁻².     

Orientationally disordered solid monolayers of tetramethylsilane on graphite and a bilayer nature of the 2-D fluid

A calorimetric investigation of the monolayers (MLs) of tetramethylsilane (TMS) adsorbed on graphite demonstrates two remarkable features: (i) occurrence of an orientational order–disorder phase transition in the 2-D solid (at 107 K at the coverage θ<1 and at 138 K at 1<θ<2) accompanied by a large entropy change (ranging from Rln8 to Rln3) depending on the coverage, and (ii) possible formation of a fluid bilayer around 220 K, above the 2-D critical temperature. A high-resolution incoherent neutron scattering experiment reveals a considerable motional disorder in the disordered 2-D solid.     

Curdlan as a Polymeric Starting Material to Access C6-Modified Glucose Derivatives

We evaluated the potential of a linear β-1,3-glucan (curdlan) as a starting material to access C6-modified glucose derivatives and found that 6-bromo-6-deoxyglucose, 6-azide-6-deoxyglucose, and 6-acetamido-6-deoxyglucose could be readily prepared from curdlan through its C6-selective and quantitative modifications and subsequent acid-catalyzed hydrolysis.     

Efficient and enantioselective total syntheses of heliannuols A and K

The second-generation enantioselective synthesis of heliannuol A and the first enantioselective total synthesis of heliannuol K (via two routes) have both been accomplished efficiently; (heliannuol A, nine steps and 25% yield; heliannuol K, seven steps and 47% yield). Highlights of our synthetic strategy include a substrate-controlled chirality transfer in the Lewis acid mediated Claisen rearrangement of the allyl aryl ether for the key construction of a tertiary stereogenic center at the benzylic position followed by, for heliannuol A, ring-closing metathesis, diastereoselective epoxidation, and regioselective cleavage of the epoxide; and for heliannuol K, ring-closing metathesis and conjugate reduction of the eight-membered enone.     

Large‐scale SPH simulations of droplet impact onto a liquid surface up to the consequent formation of Worthington jet

In this study, the whole process of liquid droplet impact onto a liquid surface up to the consequent formation of the central column was simulated using the smoothed particle hydrodynamics method (SPH), and compared with an experiment using a high‐speed video camera. The surface tension tensor for the particle‐based expression was adequately included as the gradient of the surface tension and that enabled the simulation leading to the formations of crater and crown as well as the consequent central column. The simulated time series of the crater depth and diameter and crown height corresponded quantitatively well with the experimental result up to the rebound motion while discrepancies remained as a lower central column height in the simulation, and this seemed to be ascribed to the difficulty in realizing the complex surface structure that inevitably appeared in the fast rebound motion. Copyright © 2009 John Wiley & Sons, Ltd.