Fast Liquid Phase Epitaxial Growth for Perovskite Single Crystals

Semiconductors grown by the solution-processed method have shown low-cost,facile fabrication process and comparable performance.However,there are many reasons why it is difficult to achieve high quality films.For example,lattice constant mismatch is one of the problems when photovoltaic devices made of organ metallic perovskites.In this work,MAPbBr^{MA=CH3NH3^+}perovskites single crystals grown on the surface of MAPbBr2.5 CI0.5 perovskites single crystals via liquid epitaxial growth method is demonstrated.It is found that when the lattice constants of the two perovskite single crystals are matched,another crystal can be grown on the surface of one crystal by epitaxial growth.The whole epitaxy growth process does not require high heating temperature and long heating time.X-ray diffraction method is used to prove the lattice plane of the substrate and the epitaxial grown layer.A scanning electron microscope is used to measure the thickness of the epitaxial layer.Compared with perovskite-based photodetectors without epitaxial growth layer,perovskite-based photodetectors with epitaxial growth layer have lower dark current density and higher optical responsibility.     

钴掺杂MoSe2共生长中氢气的作用分析及磁电特性研究

采用原位共生长化学气相沉积法,以Co3O4、MoO3、Se粉末为前驱物,710℃下在SiO2衬底上生长掺钴MoSe2纳米薄片,分析讨论氢气含量对其生长及调节机理的影响.表面形貌分析表明,氢气的引入促进了成核所需的氧硒金属化合物以及横向生长中需要的CoMoSe化合物分子的生成;AFM(Atomic Force Microscope)结果表明氢气有利于生长单层二维超薄掺钴MoSe2.随着Co3O4前驱物用量的增加,样品的拉曼和PL(Photoluminescence)谱图分别表现出红移和蓝移现象,带隙实现从1.52—1.57 eV的调制.XPS(X-ray photoelectron spectroscopy)结果分析得到Co的元素组分比为4.4%.通过SQUID-VSM(Superconducting QUantum Interference Device)和器件电学测试分析了样品的磁电特性,结果表明Co掺入后MoSe2由抗磁性变为软磁性;背栅FETs器件的阈值电压比纯MoSe2向正向偏移5 V且关态电流更低;为超薄二维材料磁电特性研究及应用拓展提供了基础探索.     

双稳态结构中的1/2次谐波共振及其对隔振特性的影响

以典型的双稳态系统——屈曲梁结构为例,基于等效模型,结合解析、数值和实验手段,研究了双稳态结构中的1/2次谐波共振特性、演化过程、参数调节规律及其对隔振特性的影响.研究发现,当非线性刚度系数或激励幅值增加到一定程度时,系统会在一定带宽下产生显著的1/2次谐波共振;随着激励幅值增加,阻尼系统的1/2次谐波遵循“产生-增强-衰退-消失”的过程,该过程对峰值频率和峰值传递率有重要影响;适当提高非线性强度能有效改善双稳态结构隔振特性.针对双稳态屈曲梁结构开展的实验验证了1/2次谐波特性和隔振特性变化规律.     

Dynamic relaxation process of a 3D super crystal structure in a Cu:KTN crystal

In this Letter,we report the existence and relaxation properties of a critical phenomenon on called a 3D super crystal that emerges at T=TC?3.5℃,that is,in the proximity of the Curie temperature of a Cu:KTN sample.The dynamics processes of a 3D super crystal manifest in its formation containing polarized nanometric regions and/or polarized clusters.However,with strong coupling and interaction of microcomponents,the characteristic relaxation time measured by dynamic light scattering demonstrates a fully new relaxation mechanism with a much longer relaxation time.As the relaxation mechanism of a relaxator is so-far undetermined,this research provides a novel perspective.These results can help structure a fundamental theory of ferroelectric relaxation.     

超空泡射弹水下侵彻靶板三相耦合数值模拟

超空泡射弹侵彻问题的实质是特殊水下结构受到高速冲击载荷作用下的动态响应。对12.7 mm口径超空泡射弹侵彻典型水下目标壳体的毁伤效果开展研究,基于LS-DYNA有限元分析软件建立水环境中超空泡射弹垂直侵彻曲面靶板的等效模型,探讨射弹侵彻过程中动能侵彻和气泡溃灭对靶板联合毁伤效果,获得了靶板在各阶段的应力变化和结构变形规律。结果表明:侵彻靶板前,射弹着靶速度为200 m/s时的头部表面水介质压力峰值达768 N,靶板表面有明显下凹变形;侵彻靶板时,伴随着射弹动能侵彻和气泡溃灭冲击,水介质造成的影响不足动能侵彻的2%;侵彻靶板后,在靶板正面形成峰值速度为42 m/s的水射流进一步作用于破口;靶板整体弯曲变形,在200~300 m/s范围内,随着射弹着靶速度的增加,靶板弯曲形变量减小;靶板局部发生延性穿孔,射弹在水环境中具有更好的破口效果,射弹速度变化对破口尺寸影响不大。     

基于多通道盲识别的自适应光学图像事后处理

为实时恢复天文或空间目标的湍流退化成像,提出一种适应大气湍流动态变化的多通道自适应光学图像恢复方法.以自适应光学校正后不同时刻的目标成像作为多个通道,建立求解系统点扩散函数的线性方程,根据解出的点扩散函数利用超拉普拉斯算法,求解待观测目标的估计值.结果表明:不同时刻的点扩散函数之间存在互质关系,满足多通道盲识别的理论要求.利用建立的线性方程求解出的点扩散函数与原点扩散函数的均方误差在10^-30~10^-27量级,采用超拉普拉斯算法恢复出的目标成像与原始目标之间的均方误差在10^-5~10^-4量级.本文研究为湍流退化图像的实时恢复提供了理论基础.     

基于像差特征分析的变焦光学系统装调

提出了一种基于像差特征分析的变焦系统共轴性装调方法。针对某型20倍变焦光学系统的装调,在分析变焦光学系统装调要求的基础上,通过采用光学定心加工技术,提高变焦系统各镜组内光学元件的同轴度;采用Zygo干涉仪,检测变焦系统在长短焦位置的像差特性分布;借助CodeV软件仿真计算各光学元件在系统中的公差灵敏度分布,并确定产生像差影响的敏感光学元件;在中心偏测量仪上,完成最终光学系统像质的调整。此外,还设计了一种变焦光学系统各动组间同轴度调试装置,对变焦相机主镜筒机械内孔轴线与直线导轨的平行性进行了精确测量,保证了动组组元光轴的同轴精度。装调结果表明:变焦系统成像质量有明显改善,像面一致性得到保证,长短焦轴上传递函数值分别优于技术要求值0.45和0.55,长短焦轴外0.7视场传递函数值优于0.25和0.35,实现了高精度装调,验证了该方法的可靠性。     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

真空中金属丝电爆炸数值模拟研究

利用金属丝电爆炸物理数学模型对电爆炸物理过程开展了数值模拟,研究了不同直径铝丝电爆炸特性,进一步分析了金属丝内沉积能量、电压击穿时刻、电压峰值随金属丝直径的变化规律,并与相关实验数据作了对比。     

用刚体理论分析烟囱倒下的断点位置

烟囱倾倒的过程中将会在某处发生断裂.通过刚体理论知识,采用圆台模型分析了烟囱倾倒过程中的动力学过程,通过理论推导找到极值点,理论上推断出烟囱断裂的位置.