Application of pressure sensitive paint measurement to a low-solidity cascade diffuser of a transonic centrifugal compressor

A pressure sensitive paint (PSP) measurement has been known as a pressure field measurement technique based on the oxygen quenching phenomenon of luminescence of specific luminophores. A PSP measurement was applied for pressure field measurement in a low-solidity circular cascade diffuser of a single-stage transonic centrifugal compressor with 5 in pressure ratio for HFC134a gas. The oxygen concentration was about 500 ppm. Ru (bath-phen) was adsorbed on a silica-gel thinlayer chromatography sheet, and the sheet was pasted onto the side-wall between the cascade vanes. A drastic change in luminescent intensity was recognized during a surge condition. Also the pressure variations based on luminescent intensity agreed well with the pressure fluctuations measured using a semiconductor pressure sensor with high-frequency-response. It was shown that a PSP measurement worked well to investigate the unsteady pressure fields in a circular cascade diffuser of a transonic centrifugal compressor. Moreover, the time response of PSP becomes clear as a problem to be overcome for the present.     

加肋圆柱壳在轴压作用下的屈曲和后屈曲

本文讨论完善和非完善的,纵向加肋和正交加肋圆柱壳在轴压作用下的屈曲和后屈曲性态.依据文[1]提供的圆柱薄壳屈曲的边界层理论及其分析方法,给出了加肋圆柱壳在轴压作用下的屈曲和后屈曲理论分析.本文同时讨论肋骨与壳板材料不同时对加肋圆柱壳屈曲和后屈曲性态的影响.     

Theoretical Research on a Kind of Quantum Left-handed Metamaterial

Recently, research on left-handed materials （LHMs） has attracted considerable attentions. The LHMs are a kind of metameterial which have negative permittivity and negative permeability, which lead to negative refractive index in a frequency range. The LHMs that have been available so far are in the microwave range and are usually composed of classical particles, such as split-ring resonators. Some quantum phenomena such as spontaneous emission of atoms in the LHMs which are considered to be ＇classical background＇ have also been investigated. Many potential applications of LHMs have been proposed, such as superlenses which, in principle, can achieve arbitrary subwavelength resolution.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

谈物理实验教学中学生科学素质的培养

物理教学要实现由“应试教育”向素质教育的转轨，必须改单纯的“学科教育”为“科学教育”，即不仅要让学生掌握必要的物理知识，还要为学生的整体素质发展奠定必需的科学能力和科学品质的基础．笔者通过多年的教学实践和研究深刻地认识到，在物理教学中，加强实验教学是培养学生科学素质的重要途径和关键，也是物理学科实施素质教育的一个十分重要的方面．     

An Integrated Selection Formulation for the Best Normal Mean: The Unequal and Unknown Variance Case

This paper considers an integrated formulation in selecting the best normal mean in the case of unequal and unknown variances. The formulation separates the parameter space into two disjoint parts, the preference zone (PZ) and the indifference zone (IZ). In the PZ we insist on selecting the best for a correct selection (CS₁) but in the IZ we define any selected subset to be correct (CS₂) if it contains the best population. We find the least favorable configuration (LFC) and the worst configuration (WC) respectively in PZ and IZ. We derive formulas for P(CS₁|LFC), P(CS₂|WC) and the bounds for the expected sample size E(N). We also give tables for the procedure parameters to implement the proposed procedure. An example is given to illustrate how to apply the procedure and how to use the table.     

Primal cutting plane algorithms revisited

Dual fractional cutting plane algorithms, in which cutting planes are used to iteratively tighten a linear relaxation of an integer program, are well-known and form the basis of the highly successful branch-and-cut method. It is rather less well-known that various primal cutting plane algorithms were developed in the 1960s, for example by Young. In a primal algorithm, the main role of the cutting planes is to enable a feasible solution to the original problem to be improved. Research on these algorithms has been almost non-existent.  In this paper we argue for a re-examination of these primal methods. We describe a new primal algorithm for pure 0-1 problems based on strong valid inequalities and give some encouraging computational results. Possible extensions to the case of general mixed-integer programs are also discussed.     

Generalized Longo–Rehren Subfactors and α-Induction

We study the recent construction of subfactors by Rehren which generalizes the Longo–Rehren subfactors. We prove that if we apply this construction to a non-degenerately braided subfactor N⊂M and α^±-induction, then the resulting subfactor is dual to the Longo–Rehren subfactor M⊗M ^opp⊂R arising from the entire system of irreducible endomorphisms of M resulting from α^plusmn;-induction. As a corollary, we solve a problem on existence of braiding raised by Rehren negatively. Furthermore, we generalize our previous study with Longo and Müger on multi-interval subfactors arising from a completely rational conformal net of factors on S ¹ to a net of subfactors and show that the (generalized) Longo–Rehren subfactors and α-induction naturally appear in this context. Received: 11 September 2001 / Accepted: 7 October 2001     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.