Interaction of a point vortex with boundary singularities of higher orders

Translated from Izvestiya Rossiiskoi Akademii Nauk, Mekhanika Zhidkosti i Gaza, No. 3, pp. 167–168, May–June, 1993.     

THE SCHWARZIAN DERIVATIVE IN SEVERAL COMPLEX VARIABLES(II)

ＴＨＥＳＣＨＷＡＲＺＩＡＮＤＥＲＩＶＡＴＩＶＥＩＮＳＥＶＥＲＡＬＣＯＭＰＬＥＸＶＡＲＩＡＢＬＥＳ（ＩＩ）ＧＯＮＧＳＨＥＮＧＹＵＱＩＨＵＡＮＧＺＨＥＮＧＸＵＥＡＮＭａｎｕｓｃｒｉｐｔｒｅｃｅｉｖｅｄＡｕｇｕｓｔ３０，１９９６．Ｄｅ...     

Estimates for the Rapid Decay of Concentration Functions of n-Fold Convolutions

We estimate the concentration functions of n-fold convolutions of one-dimensional probability measures. The Kolmogorov–Rogozin inequality implies that for nondegenerate distributions these functions decrease at least as O(n ^–1/2). On the other hand, Esseen⁽³⁾ has shown that this rate is o(n ^–1/2) iff the distribution has an infinite second moment. This statement was sharpened by Morozova.⁽⁹⁾ Theorem 1 of this paper provides an improvement of Morozova's result. Moreover, we present more general estimates which imply the rates o(n ^–1/2).     

Magnetic and structural transitions in La1−x Sr x MnO3: T-x phase diagram

The electrical conductivity, magnetic susceptibility, magnetization, and submillimeter (v=5∓20 cm⁻¹) permittivity and dynamic conductivity of La_1−x Sr _x MnO₃ (0≤x≤ 0.45) single crystals are investigated. The anomalies in the temperature dependences of these quantities are identified with diverse magnetic and structural phase transformations, including antiferromagnetic and ferromagnetic ordering, structural transitions between strongly distorted (Jahn-Teller) and weakly distorted (pseudocubic) orthorhombic phases, structural transitions to a rhombohedral phase and unusual transitions to a polaron-ordering state. As a result, the complete T-x phase diagram of the system La_1−2x Sr _x MnO₃ is constructed in a wide interval of temperatures T=4.2∓1050 K and concentrations x=0−0.45. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 4, 331–336 (25 August 1998)     

An algorithm for the single-input partial pole assignment problem

An algorithm for translating unstable eigenvalues of single-input partial pole assignment problems based on rank-one transformations is suggested. Special attention is paid to the practical case where translations are constructed using inexact spectral information provided by the Arnoldi procedure. Estimates of the resulting perturbations of stable and translated poles are derived. These estimates depend on the accuracy of spectral information about the unstable poles. The algorithm proposed is illustrated with numerical examples. Bibliography: 11 titles. Translated fromZapiski Nauchnykh Seminarov POMI, Vol. 229, 1995, pp. 5–28. Translated by A. Yu. Yeremin.     

四个麦芽品质性状的杂种优势和相关分析

本文对四个主要麦芽品质性状—a一淀粉酶活力、麦芽汁粘度、麦芽汁色度和搪化力进行了杂种优势和相关分析.(1)相对优势结果表明，在84个组合次中，呈正向优势的46个，占54.76男，负向优势34个，占40.48男，无显性4个，占4.75男;(2)四个品质性状的中亲优势平均值分别为一6.117、一9.965 40.452和一。.545s a-淀粉酶活力和糖化力的超高亲优势分别为一14.578和一8.201,麦芽汁粘度和色度的超低亲优势分别为5.442和70.455.四个性状杂种优势的变异系数均很大.(3)麦芽汁色度的F，对MP的回归系数(B)和相关系数(r)均达显著水平，分别为。..43和0.50，麦芽汁粘度的相关系数达显著水平，为一。.45,其余均未达显著水平，(4)除麦芽汁色度性状外，另三个性状的中亲优势、超亲优势和特殊配合力的相关均达显著或极显著水平.(5)四个麦芽品质性状间的相关结果表明，仅有a-淀粉酶活力和麦芽汁粘度间呈极显著负相关(r=一0.56').最后，文章根据实验结果，就啤酒大麦麦芽品质改良的遗传育种及其杂种优势应用进行了初步讨论.     

多电子束契伦柯夫自由电子激光振荡器

我们对多电子束契伦柯夫自由电子激光进行了首次实验研究。280A,500kV的电子束被引入一多介质矩形谐振腔,在频率为33.4GHz处产生了1.7MW的契伦柯夫相干受激辐射。互作用效率为1.2％。     

Nitroazines. 20. Simple syntheses of nitropyrazolopyridines from aliphatic nitrosynthons and aminopyrazoles

Two variants of a synthesis for nitropyrazolopyridines from aminopyrazoles and two- or three-carbon nitrosynthons are examined.For Communication 19 see [1].Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 11, pp. 1560–1564, November, 1992.     

Inversion of the density gradient and the diffusion “gate” in isothermal mixing of gases

The stable quasistationary mixing of ternary gas mixtures in a system of two chambers connected by a capillary is described by a theoretical model which predicts the density distribution of the mixture along the length of the diffusion channel. It is demonstrated that inversion of the density gradient can occur due to a nonlinear concentration distribution of the heavy component in a diffusion “gate” effect. The results obtained using this model are compared with the experimental data. Zh. Tekh. Fiz. 68, 14–17 (May 1998)     

Distribution of silicon over sublattices in semiconducting A3B5 compounds

The stable site of Si substitutional impurities in GaAs and AlAs at T=0 K is determined on the basis of an analysis of the energy of solution of silicon, and of the energies of formation of intrinsic defects and the reaction energies of their interaction obtained by calculating the total energy of the disordered compounds. These calculations indicate that amphotericity and vacancies have an effect on the distribution of Si. At low Si concentrations, Si in GaAs is located on the sublattice of the group III element, and in AlAs, on the sublattice of the group V element. Fiz. Tverd. Tela (St. Petersburg) 39, 264–266 (February 1997)