Conditions for the suppression of spatial harmonics at a two-frequency acoustooptic interaction in the Raman-Nath mode

It is demonstrated that the diffraction of a plane light wave by an acoustic wave of fundamental frequency in the Raman-Nath mode with admixture of the second acoustic harmonic may be accompanied by a considerable change in the higher diffraction orders with numbers ±2, ±3, etc. Conditions for the selective suppression of the orders are obtained in the weak and strong interaction modes. Results of a numerical simulation are presented.     

Deuteron structure and diffractive deuteron-nucleus interaction

A nonrelativistic deuteron wave function involving the D-wave state and having a correct asymptotic behavior is constructed on the basis of the experimentally measured deuteron charge form factor G _C(q) and deuteron structure function A(q). The differential cross section for elastic deuteron-nucleus scattering is calculated by using this wave function and is found to agree with experimental data at an energy of 110 MeV. Integrated cross sections for various processes involving deuteron-nucleus interactions are also calculated. The distribution in the emission angle of the center of mass of the neutron-proton system produced in the diffractive dissociation of 110-MeV deuterons in the field of ²⁰⁸Pb nuclei is obtained.     

Synthesis and investigation of titanium diselenide intercalated with ferrocene and cobaltocene

Single crystals and polycrystals of titanium diselenide TiSe₂ intercalated with ferrocene Fe(η⁵-C₅H₅)₂ and cobaltocene Co(η⁵-C₅H₅)₂ are synthesized. The magnetic susceptibility and electrical resistivity of the intercalation compounds are measured. The results obtained demonstrate that the intercalation brings about the formation of an impurity band with a temperature-dependent width.     

Magnetron deposition of molybdenum mirrors and micrometer-thick mirror foil with an ordered columnar nanocrystalline structure

The formation of a molybdenum reflecting coating with a columnar nanocrystalline structure is studied under the condition when molybdenum is deposited by dc magnetron sputtering on single-crystalline molybdenum mirrors (substrates). The coating is found to peel off together with a polishing-induced imperfect amorphous surface layer of the substrate. This effect aids in obtaining a free mirror-like molybdenum foil. When the amorphous imperfect layer is removed from the substrate before deposition, the reflecting mirror coating has a good adhesion to the substrate.     

Influence of cobalt(III) dimethyldithiocarbamate complexes on styrene polymerization initiated by tert-butyl perbenzoate

Kinetic features of radical polymerization of styrene initiated by tert-butyl perbenzoate in the presence of tris(N,N-dimethyldithiocarbamato)cobalt(III) (CoL₃) and its adduct with iodine (CoL₃ · 2I₂) were studied. The optimal concentration ratios of the activators and tert-butyl perbenzoate, providing fast styrene polymerization at 338–368 K, were determined.     

O predstavlenii lineinykh operatorov, perestanovochnykh s operatorom umnozheniya

Summary Pust' E_j (j =1,2) - lokal'no vypuklye prostranstva funktsii, odnoznachnykh i lokal'no analiticheskikh na nekotorom mnozhestve Q ⊂ℂ. Pust', dalee, m(E₁,E₂) - mnozhestvo vsekh mul'tiplikatorov pary E₁, E₂ i L (E₁, E₂) sovokupnost' vsekh lineinykh operatorov, deistvuyushchikh iz E₁ v E₂. V stat'e e pri opredelennykh predpolozheniyakh poluchen kriterii predstavleniya operatora T iz L (E₁, E₂), kommutiruyushchego s fiksirovannym elementom a∊ m(E₁,E₁) ∩m(E₂,E₂), v kanonicheskoi forme Ty = b · y, gde b∊m(E₁,E₂). Obsuzhdayut·sya predpolozheniya, pri kotorykh poluchen kriterii, i privodyat·sya primery, pokazyvayushchie ikh sushchestvennost'.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

Multipliers of convergence in norm of series with respect to multiplicative systems

We prove analogs of the Telyakovskii-Pochuev criteria for multipliers of uniform convergence and of convergence in the integral metric for multiplicative systems with bounded generating sequence.     

Novel photoswitching dithienylethenes with ferrocene units

Two novel dithienylethenes with ferrocene units were synthesized by Wittig reaction. The structure of 2a has been established by X‐ray diffraction studies. They could reversibly interconvert between two thermally stable forms, an open and a closed one, using light of different wavelengths as triggers. Copyright © 2006 John Wiley & Sons, Ltd.