Specific features of photoisomerization of provitamin D 3 in a nematic liquid crystal

Photoisomerization of provitamin D ₃ (7-dehydrocholesterol) in a nematic liquid crystal (ZLI-1695, Merck) is investigated in detail by UV absorption spectroscopy. It is found that dissolution of chiral molecules of provitamin D ₃ induces the cholesteric phase in a nematic. The spectral kinetics of photoisomerization in this phase changes significantly from that in an ethanol solution. A sharp nonmonotonic dependence of the increase in accumulation of trans isomer tachysterol in a liquid crystal matrix with a decrease in the induced cholesteric pitch from 2200 to 25 μm is revealed.     

Metastable States in Antiprotonic Helium Atoms: An Island of Stability in a Sea of Continuum

 In this contribution we consider a phenomenon of metastable states in antiprotonic helium atoms, precise spectroscopy of these states and a present-day study of the electromagnetic properties of antiprotons. Received October 16, 2001; accepted for publication November 13, 2001     

Effect of hydrogen on the photoelectronic properties of GaAs/InGaAs quantum-well heterostructures with an island palladium layer on the surface

The effect of hydrogen on the photoluminescence and planar conductivity of GaAs/InGaAs quantum-well heterostructures with an island Pd layer at the anodically oxidized surface was studied. Unlike continuous deposited Pd layers, island layers do not cause the formation of defects in the GaAs surface region and yet the Pd layer maintains high catalytic activity with respect to hydrogen. It is found that the thermal treatment of such a structure in a hydrogen atmosphere causes atomic-hydrogen passivation of the defects in quantum wells. Studies of the characteristics of planar photoresistors with an island Pd layer acting as hydrogen sensors show that their hydrogen detectivity is approximately two orders of magnitude higher than that of diode structures with continuous Pd layers.     

Fundamental processes in long air gap discharges

The development of atmospheric lightning is initiated and sustained by the formation in virgin air of ‘streamer corona’ and ‘leader’ discharges, very similar to those observed in laboratory long sparks. Therefore, the experimental and theoretical investigations of these laboratory discharges have become of large interest to improve the physical knowledge of the lightning process and to develop self-consistent models that could be applied to new protection concepts.In the present paper the fundamental processes of the subsequent phases of long air gap discharges are analyzed, from the first corona inception and development to the leader channel formation and propagation. For all these processes simulations models are discussed that have been essentially derived and simplified by the authors, in order to develop sequential time-dependent simulation of the laboratory breakdown, with both positive and negative voltages. The possibility of extending these models to the case of natural lightning is discussed in the companion paper, presented in this same volume. To cite this article: I. Gallimberti et al., C. R. Physique 3 (2002) 1335–1359.     

Automatic error correction in inflected languages

Systems for automatic detection and correction of spelling errors in natural language texts are considered. The development of such systems for both English and Russian (and for inflected languages in general, including all Slavic languages) is discussed. An approach associated with morphological analysis of the wordforms in the given text is described. The topics considered in the paper include the main methods of automatic spelling correction, levels of automation of the spelling error correction process, the effect of the type of computer used, the use of spelling error correctors in a stand-alone mode and in combination with word-processing software, and the maintenance of auxiliary dictionaries.Translated from Itogi Nauki i Tekhniki, Seriya Teoriya Veroyatnostei, Matematicheskaya Statistika, Teoreticheskaya Kibernetika, Vol. 28, pp. 111–139, 1988.     

4一致反超图的最小边数问题

混合超图是在超图的基础上添加一个反超边得到的图．超边和反超边的区别主要体现在着色要求上．在着色中,要求每一超边至少要有两个点着不同的颜色,而每一反超边至少有两个点着相同的颜色．最大最小颜色数分别称为混合超图的上色数和下色数。本文主要研究反超图,即只含反超边的超图。讨论了上色数为3的4一致超图的最小边数问题．给出了上色数为3的4一致反超图的最小边数的一个上界和一个下界．     

Analogue of a spin flop phase transition for an array of magnetic moments with dipole interaction

In a two-dimensional array of magnetic moments with planar magnetization and relatively weak anisotropy in the basal plane, a stepwise phase transition is induced by an external magnetic field parallel to the easy axis of the system. This transition is similar to the spin flop phase transition in weakly anisotropic Heisenberg antiferromagnets with the significant difference that it is accompanied by the rearrangement of the sublattice structure of the magnet; i.e., it can be interpreted as a topological transition. The transition should manifest itself for arrays of submicron magnetic particles (magnetic dots) on nonmagnetic substrates, which have recently become the object of intensive research.     

Dissociative excitation cross sections of the lead atom in collisions between electrons and PbI2 molecules

Dissociative excitation of the lead atom in e-PbI₂ collisions has been studied experimentally. 27 excitation cross sections were measured for an energy of the exciting electrons equal to 100 eV. Nine optical excitation functions were recorded with variation of the electron energy in the range 0–100 eV. The most probable reaction channels for low electron energies are discussed, as well as the ratio of the dissociative excitation cross sections for the lead atom in e-PbI₂ and e-PbCl₂ collisions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 6, pp. 701–706, November–December, 2006.     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.