High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns-V _oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V _oc of about 100?mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V _oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V _oc reached is 485?mV after laser treatment and plasma hydrogenation, thanks to defects passivation.     

An Electric Fish-Based Arithmetic Optimization Algorithm for Feature Selection

With the widespread use of intelligent information systems, a massive amount of data with lots of irrelevant, noisy, and redundant features are collected; moreover, many features should be handled. Therefore, introducing an efficient feature selection (FS) approach becomes a challenging aim. In the recent decade, various artificial methods and swarm models inspired by biological and social systems have been proposed to solve different problems, including FS. Thus, in this paper, an innovative approach is proposed based on a hybrid integration between two intelligent algorithms, Electric fish optimization (EFO) and the arithmetic optimization algorithm (AOA), to boost the exploration stage of EFO to process the high dimensional FS problems with a remarkable convergence speed. The proposed EFOAOA is examined with eighteen datasets for different real-life applications. The EFOAOA results are compared with a set of recent state-of-the-art optimizers using a set of statistical metrics and the Friedman test. The comparisons show the positive impact of integrating the AOA operator in the EFO, as the proposed EFOAOA can identify the most important features with high accuracy and efficiency. Compared to the other FS methods whereas, it got the lowest features number and the highest accuracy in 50% and 67% of the datasets, respectively.     

Some Biochemical Aspects of the Protective Effect of Strontium Chloride on Gamma-Irradiated Rats

The effect of treatment with SrCl₂ (10 mg/100 g rat) on rats 15 minutes prior to whole body γ-irradiation (7,5 Gy) was studied. The hazardeous effect of irradiation were greatly corrected in the treated group. The hyperglycemic effect and liver glycogen accumulation in the untreated group decreased to normal level. The enzymatic activities of serum alkaline phosphatase, alanine aminotransferase, aspartate aminotransferase and lactate dehydrogencase were greatly affected showing insignificant changes in the treated group of animals. Life span calculated on 50% survival was also significantly elongated by 36.3%. These results show the potentiality of SrCl₂ as a radioprotective agent which was not used before.     

Polyethylene Oxides as Organic Reactions Activators II.1 An Easy Generation of Dihalocarbenes

Polyethylene oxides are shown to promote an efficient dihalocarbene formation from bromo — and chloroform and solid potassium hydroxide — Adducts with olefins are obtained in High yields.     

Parameter identification of fractional-order chaotic systems using different Meta-heuristic Optimization Algorithms

Nonlinear Dynamics - Fractional-order chaotic systems (FOCS) parameter identification is an essential issue in chaos control and synchronization process. In this paper, different recent...     

Photoabsorption of BCl3 Gas under pulsed ArF excimer laser irradiation

The gas immersion laser doping (GILD) technique requires the measurement of the fraction of incident light absorbed in the gas phase during the irradiation with a pulsed laser. Here we report the absorption of boron trichloride (BCl₃) gas at the wavelength of a pulsed ArF excimer laser (=193 nm). We have determined the one-photon (₁) and two-photon () absorption cross sections of this dopant gas for 193 nm. The values of ₁ and are 3.6×10^–20 cm² and 9×10^–45 cm⁴·s, respectively. However, the distinction between simultaneous and sequential absorption has not been possible. Based on these results, we have established a relationship which allows the calculation of the fraction of incident light absorbed as a function of incident intensity and gas pressure.     

Growth kinetics and polysilicon formation by aluminium-induced crystallization on glass-ceramic substrates

In this work, we present extended structural properties of poly-Si thin films fabricated by aluminium-induced crystallization (AIC) of amorphous silicon (a-Si) on high-temperature glass-ceramic substrates. The silicon nucleation kinetics on glass-ceramic substrates was investigated by optical microscopy. The crystalline quality of the films was studied by micro-Raman spectroscopy as a function of exchange annealing conditions. By means of electron backscattering diffraction (EBSD), we have analyzed the effect of thermal annealing on silicon grain size and its distribution, intra- and inter-grains defects, and on the grains preferential crystallographic orientation. The optimal thermal annealing condition, allowing 100% crystallized polysilicon large grains with an average grain size of 26 μm and 〈100〉 oriented, acquired a thermal budget of 475°C and 8 h.     

Effective hydrogenation and surface damage induced by MW-ECR plasma of fine-grained polycrystalline silicon

This work reports the investigations on the effects of the hydrogenation process of thin film polycrystalline n⁺pp⁺ mesa silicon cells using MW-ECR plasma in a conventional PECVD system. Different operating parameters such as MW-ECR power, annealing temperature and the doping level of the emitter region were varied. The n⁺-type emitter regions were obtained by phosphorus diffusion in a conventional furnace using an oxide doping source containing phosphorus (P507 or P509 solutions, from Filmtronics Inc.). The MW hydrogenation was carried out at a sample temperature of 400°C for 60 min. Both types of emitters formed from P507 and P509 showed V _oc of 155 mV and 206 mV, which increased linearly to 305 mV and 331 mV, respectively, after hydrogenation when the MW power varied from 200 to 650 W. However, the sheet resistances of the n⁺ emitter region showed a slight increase depending upon hydrogenation power because of its etching. In a further study, hydrogenated samples were annealed in neutral or forming gas (FG) and we observed interesting results on V _oc in the presence of FG. The FG annealing temperature study revealed a strong dependence of V _oc on MW power, which affected the etching level of emitter and emitter dopant concentration, which controls the diffusion of hydrogen ions during post-hydrogenation step. The results were explained in detail by combining the effects of MW power and dopant level of the emitter.