Γ andX bandgap hydrostatic deformation potentials for epitaxial In0.52Al0.48As on InP(001)

The pressure dependence of the direct and indirect bandgap of epitaxial In_0.52Al_0.48As on InP(001) substrate has been measured using photoluminescence up to 92 kbar hydrostatic pressure. The bandgap changes from Γ toX at an applied pressure of ∼ 43 kbar. Hydrostatic deformation potentials for both the Γ andX bandgaps are deduced, after correcting for the elastic constant (bulk modulus) mismatch between the epilayer and the substrate. For the epilayer we obtain and+(2.81±0.15)eV for the Γ andX bandgaps respectively. From the pressure dependence of the normalized Γ-bandgap photoluminescence intensity a Γ-X lifetime ratio, (τ_Γ/τ _X ), of 4.1×10⁻³ is deduced.     

Removal of nanoparticles on silicon wafer using a self-channeled plasma filament

The effective removal of nanoparticles from a silicon wafer surface was demonstrated using the self-channeled plasma filament excited by a femtosecond (130?fs) Ti:sapphire laser (?? _p=790?nm). The photoinduced self-channeled plasma filament in air reached a length of approximately 110?C130?mm from the first focal spot with diameters ranging from 40 to 50???m at input intensities of more than 1.0×10¹⁴?W/cm². By the scan of wafer using the X?CY?CZ stage during self-channeled plasma filament, the removal variation of nanoparticles on surface was observed in situ before and after the plasma filament occurred. The cleaning efficiency was strongly dependent on the gap distance between the plasma filament and the surface. The removal efficiency of nanoparticles reached 96?% with no damage to the surface when the gap was 150???m.     

Evidence for muon neutrino oscillation in an accelerator-based experiment

We present results for nu(mu) oscillation in the KEK to Kamioka (K2K) long-baseline neutrino oscillation experiment. K2K uses an accelerator-produced nu(mu) beam with a mean energy of 1.3 GeV directed at the Super-Kamiokande detector. We observed the energy-dependent disappearance of nu(mu), which we presume have oscillated to nu(tau). The probability that we would observe these results if there is no neutrino oscillation is 0.0050% (4.0 sigma).     

Structural and electrical characterization of PZT on gold for micromachined piezoelectric membranes

Piezoelectric membranes have been fabricated that incorporate a gold bottom electrode with an adhesion layer of titanium–tungsten (10:90 wt. %). For solution-deposited acetic acid based lead zirconate titanate (HoAc-PZT) with a Zr:Ti ratio of 40:60, the film’s average piezoelectric coefficient, e₃₁, is -5.31 C/m², with a dielectric constant of 814 at 200 Hz, which is similar to values for platinum bottom electrodes. The PZT structure remains columnar on both types of bottom electrodes. Initial fabrication attempts resulted in cracking that initiated in the PZT layer of the structure. X-ray photoelectron spectroscopy was utilized to establish how processing affects diffusion throughout the composite membrane structure. Crack-free membranes were fabricated and tested. This paper discusses the performance properties and piezoelectric fatigue results for these membranes. PACS 77.84.-s; 77.84.Lf     

Activation volumes of wall-motion and nucleation processes in Co-based ferromagnetic multilayer films

Activation volumes of the wall-motion and nucleation processes in Co-based multilayer films were characterized from time-resolved domain evolution patterns. These activation volumes were both sensitive to the multilayer structure as well as the film preparation condition. The two activation volumes were generally unequal with each other and the inequality directly influenced on magnetization reversal behavior.     

Photovoltaic performance of flexible Cu(In,Ga)Se2 thin-film solar cells with varying Cr impurity barrier thickness

We report the effect of Cr impurity barrier on Cu(In,Ga)Se₂ (CIGS) thin-film solar cells prepared on flexible substrates. The Cr films with varying the thickness (t_Cr) were deposited on stainless steel substrates using direct-current magnetron sputtering. The solar cell performance was improved by increasing t_Cr since the diffusion of Fe impurities from the substrate to CIGS was suppressed. Although the elemental composition, grain size, and strain of CIGS film showed little change with varying Fe content, the fill factor and the short-circuit current density increased as decreasing Fe. The Fe increased the series resistance, shunt paths, and saturation current density. The reduction of Fe caused a steeper bandgap grading in CIGS which enhances current collection due to higher electric fields in bulk CIGS. CIGS solar cells with 1000 nm-thick Cr barrier showed the best conversion efficiency of 9.05%.     

Design of full-duplex and multifunction bidirectional CMOS transceiver for optical interconnect applications

This work presents a full-duplex and multifunction bidirectional transceiver for optical interconnect application. The transceiver utilizes a common limiting amplifier/gain stage, thus reducing total chip area and total power consumption. While providing a full-duplex bidirectional transmission with the aid of a hybrid circuit between the electrical input/output (I/O) and the optoelectronic signals from the transmitter and receiver circuits, it also allows for a half-duplex operation with the aid of a switch between the transimpedance amplifier signals and the transmitter electrical input from the I/O port. The multifunction bidirectional CMOS transceiver is designed in a 0.13 µm Si-CMOS technology, with power dissipation of 79 and 54.4 mW for the transmitter and receiver, respectively. It shows a 3-dB bandwidth of 5.58 and 5.69 GHz for the transmitter and the receiver respectively and with a 3-dB gain of 66.14 and 69.6 dB, in full-duplex mode. The transceiver operates up to 7 Gb/s in full-duplex mode.