全文获取类型
收费全文 | 9329篇 |
免费 | 367篇 |
国内免费 | 61篇 |
专业分类
化学 | 6389篇 |
晶体学 | 93篇 |
力学 | 279篇 |
数学 | 808篇 |
物理学 | 2188篇 |
出版年
2023年 | 54篇 |
2022年 | 190篇 |
2021年 | 226篇 |
2020年 | 178篇 |
2019年 | 172篇 |
2018年 | 172篇 |
2017年 | 144篇 |
2016年 | 296篇 |
2015年 | 269篇 |
2014年 | 353篇 |
2013年 | 596篇 |
2012年 | 742篇 |
2011年 | 823篇 |
2010年 | 469篇 |
2009年 | 385篇 |
2008年 | 616篇 |
2007年 | 580篇 |
2006年 | 512篇 |
2005年 | 473篇 |
2004年 | 408篇 |
2003年 | 325篇 |
2002年 | 326篇 |
2001年 | 216篇 |
2000年 | 177篇 |
1999年 | 129篇 |
1998年 | 69篇 |
1997年 | 79篇 |
1996年 | 95篇 |
1995年 | 80篇 |
1994年 | 75篇 |
1993年 | 57篇 |
1992年 | 60篇 |
1991年 | 47篇 |
1990年 | 51篇 |
1989年 | 34篇 |
1988年 | 26篇 |
1987年 | 12篇 |
1986年 | 10篇 |
1985年 | 26篇 |
1984年 | 18篇 |
1983年 | 17篇 |
1982年 | 18篇 |
1981年 | 16篇 |
1980年 | 12篇 |
1979年 | 13篇 |
1978年 | 16篇 |
1977年 | 10篇 |
1976年 | 13篇 |
1975年 | 10篇 |
1972年 | 9篇 |
排序方式: 共有9757条查询结果,搜索用时 15 毫秒
81.
Kyung Dong Lee S.S. Dahiwale Young Do Kim Jong-Han Lee Seongtak Kim Soohyun Bae Sungeun Park Sung Ju Tark Donghwan Kim 《Current Applied Physics》2013,13(1):241-245
The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiNx:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH4 + NH3 + N2, SiH4 + NH3, SiH4 + N2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation (electrical and chemical) properties. The film deposited with the gas mixture of SiH4 + NH3 + N2 showed the best properties in before and after firing process conditions.The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH4 + NH3 + N2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2%. The reason for the high efficiency using SiH4 + NH3 + N2 is because of the good optical transmittance and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study. 相似文献
82.
Electronic control of the Q-switch is used to obtain single axial mode output from an unstable resonator Nd: YAG oscillator. Controlled opening of the Q-switch following prespiking pulses provides over 10 MW of peak power in a single axial mode without significant output power reduction. 相似文献
83.
84.
85.
Large-scale inventory-distribution systems typically comprise a hierarchy of warehouses that stock goods for distribution to retailers at which demand for these goods originates. This paper develops an inventory model for two-echelon distribution systems under the assumption that the central warehouse and retailers order periodically. Characteristics of the optimal policy are described. An iterative solution procedure is presented to find optimal or near optimal operating-policy variables. Solutions of the model to a large number of test examples show that the model outperforms other existing models in the literature without sacrificing the computation time. Tested against the lower bounds on the optimal average annual variable cost obtained by removing some of the ordering costs, the solutions of the present model are found to be near optimal. 相似文献
86.
Kim GN Kim EJ Son D Bacala A Imlay R Kirk P McNeil RR Metcalf W Cheng CP Mao ZP Yan Y Xu YT Zhu YC Abashian A Gotow K Kajino F Low E Naito F Piilonen L Childers R Darden C Lusin S Rosenfeld C Wilson S Frautschi M Kagan H Kass R Trahern CG Ko W Lander RL Maeshima K Malchow RL Higashi JR Kurihara Y Maki A Nozaki T Omori T Perez P Sagawa H Sakai Y Sugimoto Y Takaiwa Y Terada S Tsuchiya K Poling R Green J Park IH Sakamoto S Sannes F Schnetzer S Stone R Trentalange S Zimmerman D Miyano K Miyata H 《Physical review letters》1988,61(8):911-914
87.
Wong KL Bitter M Hammett GW Heidbrink W Hendel H Kaita R Scott S Strachan JD Tait G Bell MG Budny R Bush C Chan A Coonrod J Efthimion PC England AC Eubank HP Fredrickson E Furth HP Goldston RJ Grek B Grisham L Hawryluk RJ Hill KW Johnson D Kamperschroer J Kugel H Ma C Mansfield D Manos D McCune DC McGuire K Medley SS Mueller D Nieschmidt E Owens DK Paré VK Park H Ramsey A Rasmussen D Roquemore AL Schivell J Sesnic S Taylor G Williams MD Zarnstorff MC 《Physical review letters》1985,55(23):2587-2590
88.
Chul Park 《Journal of Quantitative Spectroscopy & Radiative Transfer》1978,20(5):491-498
The sum of the squares of the electronic transition moments, Σ|Re|2, for the E1Σ+ ?X1Σ+ band system of SiO has been determined from absorption measurements conducted in the reflected-shock region of a shock tube. The test gas was produced by shock-heating a mixture of SiCl4, N2O and Ar, and the spectra were recorded photographically in the 150–230 nm wavelength range. The values of the Σ|Re|2 were determined by comparing the measured absorption spectra with those produced by a line-be-line synthetic spectrum calculation. The value of the Σ|Re|2 so deduced at an r-centroid value of 3.0 Bohr was 0.86±0.10 atomic units. 相似文献
89.
90.
Aihara H Alston-Garnjost M Bakken JA Barbaro-Galtieri A Barnes AV Barnett BA Bengtsson H Blumenfeld BJ Bross AD Buchanan CD Chamberlain O Chien C Clark AR Cordier A Dahl OI Day CT Derby KA Eberhard PH Fancher DL Fujii H Fujii T Gabioud B Gary JW Gorn W Hadley NJ Hauptman JM Hofmann W Huth JE Hylen J Kamae T Kaye HS Kenney RW Kerth LT Koda RI Kofler RR Kwong KK Layter JG Lindsey CS Loken SC Lu X Lynch GR Madansky L Madaras RJ Maruyama K Marx JN Matthews JA Melnikoff SO Moses W Nemethy P 《Physical review letters》1985,54(4):270-273