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141.
A high-speed and economical optical local access network system is proposed where bi-directional polarization multiplexing is applied to a bi-directional transmission. Experimental results using a prototype system confirmlow optical loss and environmental stabilities.  相似文献   
142.
Formation of p-type ZnO film on InP substrate by phosphor doping   总被引:3,自引:0,他引:3  
ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn3P2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn3P2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.  相似文献   
143.
Green-light-emitting Zn2SiO4:Mn phosphor particles were synthesized by modified large-scale spray pyrolysis using a colloidal solution containing fumed silica particles. The particles had a fine size, filled morphology, spherical shape and non-aggregation characteristics even after post-treatment at 1150 °C. The luminescence characteristics of Zn2SiO4:Mn phosphor particles having spherical shape, such as brightness and decay time under VUV excitation light, were investigated as a function of Mn content. The luminescence intensity exhibits a maximum at 5 mol% Mn-doped powder. The decay time increases consistently with decreasing Mn content and more saturated color coordinates are obtained with the composition having 12 mol% Mn. As a consequence, the 10 mol% Mn-doped powder proved to provide a good combination of favorable luminance and acceptable decay time. The influence of post-treatment temperature on the decay time and photoluminescence characteristics of Zn2SiO4:Mn particles was also investigated. Particles post-treated at 1155 °C had the maximum photoluminescence intensity, which was identical to 113% that of the commercial product, and a comparable decay time of 5.8 ms. PACS 81.20.Rg; 78. 55.Hx; 78.40.Ha; 81.05.Hd; 81.40.Tv  相似文献   
144.
Tm3+/Yb3+-codoped germanate-niobic (GN) and germanium-bismuth (GB) glasses have been synthesized by conventional melting and quenching method. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions 1G43H6 and 1G43H4, respectively, were observed at room temperature. The possible up-conversion mechanisms are discussed and estimated. GN glass showed a weaker up-conversion emission than GB glass, which is inconsistent with the prediction from the difference of maximum phonon energy between GN and GB glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Compared with phonon side-band spectroscopy, Raman spectroscopy extracts more information including both phonon energy and phonon density. For the first time, our results reveal that, besides the maximum phonon energy, the phonon density of host glasses is also an important factor in determining the up-conversion efficiency.  相似文献   
145.
A simple and accurate approach for analysis of dielectric periodic structures is proposed in this paper. The method combines the coupled-mode theory with Floquet theory and joins the eigenmode expansion with the space harmonic expansion properly. As a result, the whole analysis procedure is significantly simplifid. Numerical results for the filter characteristics of some dielectric periodic structures show that the present method is effective, accurate and useful.Supported by The National Natural Science Foundation of China and The Foundation of State Educational Commission.  相似文献   
146.
Summary. This paper is concerned with a high order convergent discretization for the semilinear reaction-diffusion problem: , for , subject to , where . We assume that on , which guarantees uniqueness of a solution to the problem. Asymptotic properties of this solution are discussed. We consider a polynomial-based three-point difference scheme on a simple piecewise equidistant mesh of Shishkin type. Existence and local uniqueness of a solution to the scheme are analysed. We prove that the scheme is almost fourth order accurate in the discrete maximum norm, uniformly in the perturbation parameter . We present numerical results in support of this result. Received February 25, 1994  相似文献   
147.
设f:R^n→R^n是一同胚,本文证明了f是拟共形映射的充要条件是f将R^n中的任一距离Cigar域映成R^n中的距离Cigar域.  相似文献   
148.
Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2 (X=0.17, 0.25, 0.33, 0.5) compounds are prepared by a simple combustion method. The Rietvelt analysis shows that these compounds could be classified as having the α-NaFeO2 structure. The initial charge-discharge and irreversible capacity increases with the decrease of x in Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2. Indeed, Li[Ni0.50Mn0.50]O2 compound shows relatively low initial discharge capacity of 200 mAh/g and large capacity loss during cycling, with Li[Ni0.17Li0.22Mn0.61]O2 and Li[Ni0.25Li0.17Mn0.58]O2 compounds exhibit high initial discharge capacity over 245 mAh/g and stable cycle performance in the voltage range of 4.8 -2.0 V. On the other hand, XANES analysis shows that the oxidation state of Ni ion reversibly changes between Ni2+ and about Ni3+, while the oxidation state of Mn ion sustains Mn4+ during charge-discharge process. This result does not agree with the previously reported ‘electrochemistry model’ of Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2, in which Ni ion changes between Ni2+ and NI4+. Based on these results, we modified oxidation-state change of Mn and Ni ion during charge-discharge process.  相似文献   
149.
In this paper, we prove the Hyers-Ulam-Rassias stability of homomorphisms in quasi-Banach algebras associated to the Pexiderized Cauchy functional equation. This is applied to investigate homomorphisms between quasi-Banach algebras. The concept of Hyers-Ulam-Rassias stability originated from Th.M. Rassias' stability theorem that appeared in his paper [Th.M. Rassias, On the stability of the linear mapping in Banach spaces, Proc. Amer. Math. Soc. 72 (1978) 297-300].  相似文献   
150.
深能级杂质对光导半导体开关非线性特性的影响   总被引:2,自引:2,他引:0  
建立了非线性GaAs光导开关深能级杂质瞬态模型的基本方程,获得了与实验现象定性吻合的电流输出,给出了平均载流子随时间演化的情况.分析结果表明,在考虑了深能级杂质的俘获、发射和碰撞电离后,有可能对非线性光导开关中发生的一系列现象做出解释,进一步的仔细分析将对非线性光导开关的设计和制作提供理论指导.  相似文献   
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